Unveiling the Relationship between Passivation Groups and the Structural and Optoelectronic Performances of Perovskite Surfaces and Devices

Siyu Zhang,Jie Su,Jincheng Zhang,Jingjing Chang,Yue Hao
DOI: https://doi.org/10.1021/acs.jpcc.1c08189
2022-01-01
Abstract:Passivation engineering has been widely employed to improve the optoelectronic performance of perovskite devices due to its mitigation role in the surface defect. However, the relationship between the natural physical properties of passivations and the optoelectronic properties of perovskite performance is not well revealed. Here, we find that perovskite surfaces show a weaker structural disorder upon functional passivation with higher electronegativity and a lower radius, irrespective of the surface termination and defect. The band gap and band offset of the defective perovskite surface are determined by the charge transfer from passivation which is related to the production of valence electrons and electronegativity. Less charge transfer can improve the band-bending of the n-type perovskite surface and then reduce the band barrier between the perovskite and electron transport layer, while larger charge transfer can improve the band-bending of the p-type perovskite surface. Such mechanisms and characteristics are further confirmed by the device simulation. These findings unveil the relationship between the natural physical properties of passivation and the optoelectronic properties of perovskite performance and provide a guideline to choose the appropriate passivation molecules or ions for the perovskite surface.
What problem does this paper attempt to address?