Effects of Mechanical Loadings on the Performance of a Piezoelectric Hetero-Junction

Yang Wanli,Hong Renzhong,Wang Yunbo,Hu Yuantai

DOI: https://doi.org/10.1007/s10483-022-2848-7

2022-01-01

Applied Mathematics and Mechanics

Abstract:A fully-coupled model for a piezoelectric hetero-junction subjected to a pair of stresses is proposed by discarding the depletion layer approximation. The effect of mechanical loadings on PN junction performance is discussed in detail. Numerical examples are carried out for a p-Si/ZnO-n hetero-junction under a pair of stresses acting on the n-type ZnO portion near the PN interface, where ZnO has the piezoelectric property while Si is not. It is found that the bottom of conduction band is lowered/raised near the two loading points due to the decrease/increase in the electron potential energy there induced by a tensile-stress mode via sucking in majority-carriers from two outside regions, which implies appearance of a potential barrier and a potential well near two loading points. Furthermore, the barrier height and well depth gradually become large with increasing tensile stress such that more and more electrons/holes are inhaled in loading region from the n-/p-zone, respectively. Conversely, rising/dropping of conduction band bottom is brought out near the two loading points by a compressive-stress mode due to the increase/decrease in the potential energy of electrons by pumping out the majority-carriers from the loading region to the two outside regions. Therefore, a potential well and a potential barrier are induced near the two loading points, such that more and more electrons/holes are driven away from the loading region to the n-zone/p-zone, respectively, with the increasing compressive stress. These effects are important to tune the carrier recombination rate near the PN interface. Thus, the present study possesses great referential significance to piezotronic devices.