Abstract:Realizing today's cloud-level artificial intelligence functionalities directly on devices distributed at the edge of the internet calls for edge hardware capable of processing multiple modalities of sensory data (e.g. video, audio) at unprecedented energy-efficiency. AI hardware architectures today cannot meet the demand due to a fundamental "memory wall": data movement between separate compute and memory units consumes large energy and incurs long latency. Resistive random-access memory (RRAM) based compute-in-memory (CIM) architectures promise to bring orders of magnitude energy-efficiency improvement by performing computation directly within memory. However, conventional approaches to CIM hardware design limit its functional flexibility necessary for processing diverse AI workloads, and must overcome hardware imperfections that degrade inference accuracy. Such trade-offs between efficiency, versatility and accuracy cannot be addressed by isolated improvements on any single level of the design. By co-optimizing across all hierarchies of the design from algorithms and architecture to circuits and devices, we present NeuRRAM - the first multimodal edge AI chip using RRAM CIM to simultaneously deliver a high degree of versatility for diverse model architectures, record energy-efficiency $5\times$ - $8\times$ better than prior art across various computational bit-precisions, and inference accuracy comparable to software models with 4-bit weights on all measured standard AI benchmarks including accuracy of 99.0% on MNIST and 85.7% on CIFAR-10 image classification, 84.7% accuracy on Google speech command recognition, and a 70% reduction in image reconstruction error on a Bayesian image recovery task. This work paves a way towards building highly efficient and reconfigurable edge AI hardware platforms for the more demanding and heterogeneous AI applications of the future.

A Hybrid RRAM-SRAM Computing-In-Memory Architecture for Deep Neural Network Inference-Training Edge Acceleration

Hybrid RRAM/SRAM in-Memory Computing for Robust DNN Acceleration

An Energy Efficient Computing-in-Memory Accelerator With 1T2R Cell and Fully Analog Processing for Edge AI Applications

Energy-Efficient Hybrid-RAM with Hybrid Bit-Serial Based VMM Support

SNrram: an Efficient Sparse Neural Network Computation Architecture Based on Resistive Random-Access Memory.

A 28-Nm 36 Kb SRAM CIM Engine with 0.173 $\mu $m$^{2}$ 4T1T Cell and Self-Load-0 Weight Update for AI Inference and Training Applications

High-Throughput In-Memory Computing for Binary Deep Neural Networks with Monolithically Integrated RRAM and 90nm CMOS

RRAM-DNN: an RRAM and Model-Compression Empowered All-Weights-On-Chip DNN Accelerator

A 28-Nm 135.19 TOPS/W Bootstrapped-SRAM Compute-in-Memory Accelerator with Layer-Wise Precision and Sparsity

A compute-in-memory chip based on resistive random-access memory

A 3d Multi-Layer Cmos-Rram Accelerator for Neural Network

TIME: A Training-in-Memory Architecture for RRAM-Based Deep Neural Networks

Energy-efficient SNN Architecture using 3nm FinFET Multiport SRAM-based CIM with Online Learning

HD-CIM: Hybrid-Device Computing-In-Memory Structure Based on MRAM and SRAM to Reduce Weight Loading Energy of Neural Networks

A Multilevel Cell STT-MRAM-Based Computing In-Memory Accelerator for Binary Convolutional Neural Network

A 28-Nm RRAM Computing-in-Memory Macro Using Weighted Hybrid 2T1R Cell Array and Reference Subtracting Sense Amplifier for AI Edge Inference

Twofold Sparsity: Joint Bit- and Network-Level Sparsity for Energy-Efficient Deep Neural Network Using RRAM Based Compute-In-Memory

CAP-RAM: A Charge-Domain In-Memory Computing 6T-SRAM for Accurate and Precision-Programmable CNN Inference

A 28nm 8928Kb/mm 2 -Weight-Density Hybrid SRAM/ROM Compute-in-Memory Architecture Reducing >95% Weight Loading from DRAM.

A 1T2R1C ReRAM CIM Accelerator with Energy-Efficient Voltage Division and Capacitive Coupling for CNN Acceleration in AI Edge Applications.

Edge AI without Compromise: Efficient, Versatile and Accurate Neurocomputing in Resistive Random-Access Memory