High-energy ball-milling constructing P-doped g-C3N4/MoP heterojunction with Mo-N bond bridged interface and Schottky barrier for enhanced photocatalytic H-2 evolution

Xuehua Wang,Xianghu Wang,Wenli Tian,Alan Meng,Zhenjiang Li,Shaoxiang Li,Lei Wang,Guicun Li
DOI: https://doi.org/10.1016/j.apcatb.2021.120933
2022-01-01
Abstract:The critical prerequisite for realizing the industrial application of photocatalytic technology lies on developing efficient photocatalyst through reasonable and large-scale modification strategy. Herein, the rapid and solventfree high-energy ball-milling procedure was adopted to modify graphitic carbon nitride (g-C3N4) on a large-scale by phosphorus (P) atom doping and molybdenum phosphide (MoP) decorating. It is confirmed that P doping can introduce a mid-gap state in the band gap of g-C3N4, broadening the light responsive region and enhancing the electrical conductivity of g-C3N4. The Mo-N bond at the interface of P-doped g-C3N4 and MoP acting as electrons "delivery channels" facilitates the charge transfer from P-doped g-C3N4 to MoP, while the Schottky barrier promotes the separation of photocarriers. As a result, the optimized P-doped g-C3N4/MoP photocatalyst performs an improved H-2 evolution rate of 4917.83 mu mol.g(-1).h(-1) and a favorable H-2 production stability. This work offers a replicable prototype on adopting high-energy ball-milling to modify photocatalyst.
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