Abstract:To prevent electron leakage in deep ultraviolet (UV) AlGaN light-emitting diodes (LEDs), Al-rich p-type AlxGa(1-x)N electron blocking layer (EBL) has been utilized. However, the conventional EBL can mitigate the electron overflow only up to some extent and adversely, holes are depleted in the EBL due to the formation of positive sheet polarization charges at the heterointerface of the last quantum barrier (QB)/EBL. Subsequently, the hole injection efficiency of the LED is severely limited. In this regard, we propose an EBL-free AlGaN deep UV LED structure using graded staircase quantum barriers (GSQBs) instead of conventional QBs without affecting the hole injection efficiency. The reported structure exhibits significantly reduced thermal velocity and mean free path of electrons in the active region, thus greatly confines the electrons over there and tremendously decreases the electron leakage into the p-region. Moreover, such specially designed QBs reduce the quantum-confined Stark effect in the active region, thereby improves the electron and hole wavefunctions overlap. As a result, both the internal quantum efficiency and output power of the GSQB structure are ~2.13 times higher than the conventional structure at 60 mA. Importantly, our proposed structure exhibits only ~20.68% efficiency droop during 0-60 mA injection current, which is significantly lower compared to the regular structure.

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Performance Improvement of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Step-Like Quantum Barriers

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Performance Improvement of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes Via Al-composition Graded Quantum Wells

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AlGaN Deep Ultraviolet Light-Emitting Diodes Performance Enhancement Strategy at Last Quantum Barrier

Performance Improvement of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes by Inserting Single Spike Barriers

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AlGaN-based Deep Ultraviolet Light-emitting Diodes on Separated Multiple Quantum Barrier Electron Blocking Layer

Enhanced Carrier Injection in AlGaN-based Deep Ultraviolet Light-emitting Diodes by Polarization Engineering at the LQB/p-EBL Interface

Performance enhancement of an N-polar nitride deep-ultraviolet light-emitting diode with compositionally graded p-AlGaN