Robust Magnetic-Field Effect on Spin-Reorientation in Eu3+-Modified Tmfeo3 Single Crystal

Poorva Sharma,Ashwini Kumar,Arvind Yogi,Rubin Li,Baojuan Kang,Wei Ren,Shixun Cao
DOI: https://doi.org/10.1016/j.jallcom.2022.166241
2022-01-01
SSRN Electronic Journal
Abstract:Strongly correlated electron systems are an excellent platform for functional materials. Here, we present a strong magnetic effect in the Eu3+-doped TmFeO3 single crystal, where half of the Tm3+ sites are replaced by Eu3+ dopants in the orthorhombic lattice of TmFeO3 (Tm0.5Eu0.5FeO3). We demonstrated by combining the dc-magnetic susceptibility χ(T) as well as magnetization isotherm M(H), that the temperature dependent magnetization results under tiny change in magnetic field (H) shows the evidence for the formation of such remarkable effects due to Tm3+ substituted with Eu3+ ion in TmFeO3. Interestingly, Eu3+ doping protects the antiferromagnetic (AFM) spin-reorientation transition along crystallographic c-axis as observed by a sharp transition at TSR = 90 K, similar as parent TmFeO3. Further, an external applied field (H) of 500 Oe is enough to fully suppress the spin-reorientation transition in Eu3+ doped TmFeO3. We emphasize that the transition from almost free-state of Tm3+ spin to AFM state changes by 90 K at such low magnetic field. Experimentally observe significant changes in terms of shift in the magnetic transition (SRT) under an applied very low magnetic field due to Eu3+ doping in TmFeO3 lattice is truly robust effect.
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