Abstract:Transition-metal dichalcogenides (TMDs) have emerged in recent years as a special group of two-dimensional materials and have attracted tremendous attention. Among these TMD materials, molybdenum disulfide (MoS2) has shown promising applications in electronics, photonics, energy, and electrochemistry. In particular, the defects in MoS2 play an essential role in altering the electronic, magnetic, optical, and catalytic properties of MoS2, presenting a useful way to engineer the performance of MoS2. The mechanisms by which lattice defects affect the MoS2 properties are unsettled. In this work, we reveal systematically how lattice defects and substrate interface affect MoS2 electronic structure. We fabricated single-layer MoS2 by chemical vapor deposition and then transferred onto Au, single-layer graphene, hexagonal boron nitride, and CeO2 as substrates and created defects in MoS2 by ion irradiation. We assessed how these defects and substrates affect the electronic structure of MoS2 by performing X-ray photoelectron spectroscopy, Raman and photoluminescence spectroscopies, and scanning tunneling microscopy/spectroscopy measurements. Molecular dynamics and first-principles based simulations allowed us to conclude the predominant lattice defects upon ion irradiation and associate those with the experimentally obtained electronic structure. We found that the substrates can tune the electronic energy levels in MoS2 due to charge transfer at the interface. Furthermore, the reduction state of CeO2 as an oxide substrate affects the interface charge transfer with MoS2. The irradiated MoS2 had a faster hydrogen evolution kinetics compared to the as-prepared MoS2, demonstrating the concept of defect controlled reactivity in this phase. Our findings provide effective probes for energy band and defects in MoS2 and show the importance of defect engineering in tuning the functionalities of MoS2 and other TMDs in electronics, optoelectronics, and electrochemistry.

First Principles Study on the Cadmium Adsorption Behaviour of MoS2 with Structural Defects and Doping

Structural Defects in 2D MoS2 Nanosheets and Their Roles in the Adsorption of Airborne Elemental Mercury

Comparison of the effect of C doping on the photovoltaic properties of the defect state transition metal sulfur compounds MX2 (M=Mo, W; X=S, Te): a first-principles study

Unraveling States, Energetics, and Kinetics of Adsorbing Oxygen Species above MoS2

N-doping enabled defect-engineering of MoS2 for enhanced and selective adsorption of CO2: A DFT approach

How Doped MoS2 Breaks Transition-Metal Scaling Relations for CO2 Electrochemical Reduction

First principle study of the effect of doping on the optoelectronic properties of Cr-adsorbed MoS2

Modulation of Gas Adsorption and Magnetic Properties of Monolayer-MoS2 by Antisite Defect and Strain

Greatly Enhanced Optical Absorption of A Defective Mos2 Monolayer Through Oxygen Passivation

Formation of Defects and Impurities in MoSx and Their Effect on Electronic Properties

Modulating Carrier Density and Transport Properties of Mos2 by Organic Molecular Doping and Defect Engineering

Effect of defect types in monolayer MoS2 on SO2 adsorption

Tuning Electronic Structure of Single Layer MoS2 Through Defect and Interface Engineering

Optimizing 2D MoS2 for removal of anionic heavy metals from water: insights from density functional theory study

Doping induced band-gap shrinkage to modify electronic structure of MoS2 for organic wastewater management

Electrochemical catalysis and corrosion of defective MoS2: Microscopic behaviors and density-functional-theory calculations

Electronic structures of defects and magnetic impurities in MoS2 monolayers

The charge effects on the hydrogen evolution reaction activity of the defected monolayer MoS2

Adsorption of sulfur-containing contaminant gases by pristine, Cr and Mo doped NbS2 monolayers based on density functional theory

Comparative adsorption of heavy metal ions in wastewater on monolayer molybdenum disulfide

Photocatalytic activity modulation review: Cobalt vs. manganese doping in MoS2