Guanidinium-assisted Crystallization Modulation and Reduction of Open-Circuit Voltage Deficit for Efficient Planar FAPbBr3 Perovskite Solar Cells

Huifen Xu,Zheng Liang,Jiajiu Ye,Shendong Xu,Zihan Wang,Liangzheng Zhu,Xiaojing Chen,Zhengguo Xiao,Xu Pan,Guozhen Liu

DOI: https://doi.org/10.1016/j.cej.2022.135181

IF: 15.1

2022-01-01

Chemical Engineering Journal

Abstract:The bromide-based perovskites with wide bandgap have attracted particular interests for the potential ability to serve as front sub-cells of monolithic all-perovskite triple junction tandem solar cells. However, non-radiative recombination induced by crystal defects could cause the massive open-circuit voltage (V-OC) losses, which severely disserves the performance of bromide-based perovskite solar cells. Hence, we incorporated guanidinium bromide (GABr) to modulate crystallization and heal charged defects of FAPbBr(3)-based solar cells. The introduction of GABr provides a non-wetting surface and suppresses heterogeneous nucleation, leading to larger grain size. Notably, nitrogen (N) atoms from GA(+) cations are in two differently charged environments, which are ionized ammonium group (-NH3+) and unsaturated N atoms in form of amine or imine group (-NH2 or = NH). Thus, GA(+) cations simultaneously heal both positively and negatively charged defects through multi-reactive sites with perovskite. Consequently, introduction of GABr releases microstrain and strengthens lattice structure, further transforms the perovskite from charge-rich to charge-natural region, which comprehensively leads to suppress non-radiative recombination. As a result, the high-quality planar FAPbBr3-based device yielded a PCE of 8.92% with a champion V-OC of 1.639 V, which is the highest value among FAPbBr3 solar cells up to date.