Abstract:Layered magnetic materials with nontrivial spin configurations usually emerge novel magnetic and transport properties. Herein, we investigate the anisotropy of magnetic properties and the anomalous Hall effect (AHE) in the layered itinerant ferromagnetic (FM) monoclinic ${\mathrm{Cr}}_{5}{\mathrm{Te}}_{8}\phantom{\rule{0.28em}{0ex}}(m\text{\ensuremath{-}}{\mathrm{Cr}}_{5}{\mathrm{Te}}_{8})$ single crystal. There are some observations: (1) Based on the measurement of angular-dependent magnetization $M(\ensuremath{\varphi})$, the system shows strong twofold out-of-plane symmetry. Meanwhile, the maximum of the rotational magnetic entropy change $\mathrm{\ensuremath{\Delta}}{S}_{M}^{\mathrm{R}}(T,H)$ between the $c$ axis and the $ab$ plane is about $1.1\phantom{\rule{0.28em}{0ex}}\mathrm{J}\phantom{\rule{0.16em}{0ex}}{\mathrm{kg}}^{\ensuremath{-}1}\phantom{\rule{0.16em}{0ex}}{\mathrm{K}}^{\ensuremath{-}1}$ with a magnetic-field change of 4.5 T. Both indicate that there exists a strong uniaxial anisotropy in $m\text{\ensuremath{-}}{\mathrm{Cr}}_{5}{\mathrm{Te}}_{8}$. (2) The paramagnetic-FM phase-transition temperature (${T}_{\mathrm{C}}$) of $m\text{\ensuremath{-}}{\mathrm{Cr}}_{5}{\mathrm{Te}}_{8}$ is about 186 K and very sensitive to the applied pressure ($P$) with the derivative of ${T}_{\mathrm{C}}$ with respect to $P\phantom{\rule{0.16em}{0ex}}d{T}_{\mathrm{C}}/dP\ensuremath{\sim}\ensuremath{-}50\phantom{\rule{0.28em}{0ex}}\mathrm{K}\phantom{\rule{0.16em}{0ex}}{\mathrm{GPa}}^{\ensuremath{-}1}$. (3) As to the AHE, by considering the scaling behavior between the anomalous Hall resistivity ${\ensuremath{\rho}}_{xy}^{\mathrm{A}}$ and the longitudinal resistivity ${\ensuremath{\rho}}_{xx}$, the origin of the AHE in $m\text{\ensuremath{-}}{\mathrm{Cr}}_{5}{\mathrm{Te}}_{8}$ can be described by the skew-scattering mechanism. Moreover, the measurements of the AHE and isothermal magnetization confirm that the spin-flop behavior exists in $m\text{\ensuremath{-}}{\mathrm{Cr}}_{5}{\mathrm{Te}}_{8}$. The critical field ${H}_{\mathrm{C}}$ is about 0.26 T, and a possible explanation is given with the magnetic phase diagram of $m\text{\ensuremath{-}}{\mathrm{Cr}}_{5}{\mathrm{Te}}_{8}$ drawn.

Multiple Magnetic Phase Transitions and Critical Behavior in Single Crystal Cr5Te6

Multiple magnetic phase transitions and critical behavior in single crystal Cr 5 Te 6

Critical Behavior and Magnetocaloric Effect in Monoclinic Cr5Te8

Critical Behavior and Magnetocaloric Effect of the Quasi-Two-dimensional Room-Temperature Ferromagnet Cr4Te5

Critical Behavior of Quasi-Two-dimensional Ferromagnet Cr1.04Te2

Magnetic Properties and Critical Behavior of Quasi-2D Layered Cr4Te5 Thin Film

Critical Properties of the Quasi-Two-dimensional Metallic Ferromagnet Fe2.85GeTe2.

Critical Behavior of the Single-Crystalline Van Der Waals Bonded Ferromagnet Cr2Ge2Te6

Critical Phenomenon of the Ferromagnet Cr2Te3 with Strong Perpendicular Magnetic Anisotropy

Critical behavior of the quasi-two-dimensional ferromagnet Cr 1.04 Te 2

Magnetic Anisotropy and Anomalous Hall Effect in Monoclinic Single Crystal Cr5Te8

Tricritical Behavior of the Two-Dimensional Intrinsically Ferromagnetic Semiconductor CrGeTe3

Multiple Magnetic Phase Transitions and Critical Behavior in Single-Crystal SmMn<sub>2</sub>Ge<sub>2</sub>

Long‐Range Magnetic Exchange Coupling in Quasi‐2D CrTe Ferromagnetic Thin Films

Field-dependent Anisotropic Room-Temperature Ferromagnetism in Cr3Te4

Atomic scale electronic structure of the ferromagnetic semiconductor Cr 2 Ge 2 Te 6 .

Scaling Study of the Magnetic Entropy Change in Room-Temperature Ferromagnet Cr3te4

Atomic scale electronic structure of the ferromagnetic semiconductor Cr2Ge2Te6

Critical behavior of quasi-two-dimensional weak itinerant ferromagnet trigonal chromium telluride Cr$_{0.62}$Te

Phase engineering of Cr 5 Te 8 with colossal anomalous Hall effect

Magnetic Entropy Scaling in Ferromagnetic Semiconductor CrGeTe3