Abstract:A universal 3D integrated approach that simultaneously achieves both enhanced transconductance and mechanical stretchability via constructing a multilayer breath‐figured porous polymer transistor channel by P3HT/SEBS and Pg2T‐T/SEBS mixture is demonstrated. The formed multilayer elastic porous structure provides efficient and tunable ionic‐electronic coupling and transport pathways, while also introducing immunity toward mechanical tensile deformation. Porous films offer a general and simple strategy for balancing the electron/hole transport, and ion doping/dedoping process in organic electrochemical transistor (OECT) channel. Here a universal 3D integrated approach that simultaneously achieves both enhanced transconductance (gm) and mechanical stretchability via constructing a multilayer breath‐figured porous polymer channel by poly(3‐hexylthiophene) (P3HT)/ polystyrene‐block‐poly(ethylene‐ran‐butylene)‐block‐polystyrene (SEBS) and poly(2,5‐bis(3‐triethyleneglycoloxythiophen‐2‐yl)‐co‐thiophene) (Pg2T‐T)/SEBS mixture is demonstrated. The formed multilayer elastic porous structure provides efficient and tunable ionic‐electronic coupling and transport pathways, while also introducing immunity toward mechanical tensile deformation. Remarkably, an obvious increase in gm [from 10.05 mS (2.13 mS) to 29.23 mS (7.38 mS) for Pg2T‐T (P3HT)] is acquired by assembling the OECT porous channel from a single layer to a 3D trilayer. Moreover, mechanical stretchability as high as 40% for Pg2T‐T and 60% for P3HT, is obtained with >21% gm retained. Furthermore, high gms (9.34 mS and 0.92 mS for Pg2T‐T and P3HT, respectively) are maintained after 600 stretching cycles (20% and 30% tensile strains for Pg2T‐T and P3HT, respectively). Overall, the 3D porous structure provides an effective strategy to enhance stretchability and electrical performance for OECTs, as well as opens possibilities for other electronics where both stretchability and a large surface‐to‐volume ratio are needed.

Highly Stretchable Organic Electrochemical Transistors with Strain-Resistant Performance

Stretchable Redox‐active Semiconducting Polymers for High‐performance Organic Electrochemical Transistors

Facile Approach to Fabricating Stretchable Organic Transistors with Laser-Patterned Ag Nanowire Electrodes

Air/water Interfacial Assembled Semiconductor Films for Stretchable Organic Electrochemical Transistors

Multilayer Porous Polymer Films for High‐Performance Stretchable Organic Electrochemical Transistors

Design of Strain-Limiting Substrate Materials for Stretchable and Flexible Electronics

Plastic Deformation of Polymer Blends As a Means to Achieve Stretchable Organic Transistors

Stretchable silicon electronics and their integration with rubber, plastic, paper, vinyl, leather and fabric substrates

Soft Elastomers with Programmable Stiffness As Strain-Isolating Substrates for Stretchable Electronics.

Stretchable Organic Electrochemical Transistors Via Three-Dimensional Porous Elastic Semiconducting Films for Artificial Synaptic Applications

Vertical-Structure Overcomes the Strain Limit of Stretchable Organic Electrochemical Transistors.

Highly stretchable polystyrene sulfonate organic electrochemical transistors achieved via polyethylene glycol addition

3D-Printed Intrinsically Stretchable Organic Electrochemical Synaptic Transistor Array

Highly Stable Kirigami-Structured Stretchable Strain Sensors For Perdurable Wearable Electronics

Breathable and Stretchable Organic Electrochemical Transistors with Laminated Porous Structures for Glucose Sensing

Stretchable Organic Semiconductor Devices.

Highly stretchable and high-mobility simiconducting nanofibrous blend films for fully stretchable organic transistors

Highly Stretchable MoS2‐Based Transistors with Opto‐Synaptic Functionalities

Intrinsically Stretchable Organic Solar Cells and Sensors Enabled by Extensible Composite Electrodes

Intrinsically Stretchable Organic Electrochemical Transistors with Rigid‐Device‐Benchmarkable Performance