Sulfur Vacancy-Rich ZnIn2S4 Nanosheet Arrays for Visible-Light-driven Water Splitting

Jie Chen,Kun Li,Xiaoyan Cai,Yulong Zhao,Xiuquan Gu,Liang Mao
DOI: https://doi.org/10.1016/j.mssp.2022.106547
IF: 4.1
2022-01-01
Materials Science in Semiconductor Processing
Abstract:In this study, ZnIn2S4 nanosheet arrays (NSAs) were synthesized on transparent conductive F doped SnO2 (FTO) substrates via a facile hydrothermal method. S vacancies were introduced on the ZnIn2S4 surface by a H-2-Ar plasma treatment. The sulfur vacancies were identified clearly by electron paramagnetic resonance (EPR). Under different plasma powers, the S vacancies concentration can be adjusted. With increasing the plasma power, both the photocurrent and H-2 evolution rate of ZnIn2S4 were increased. Through a 60 W plasma treatment, ZnIn2S4 displayed a photocurrent density of 0.3 mAcm(-2) at 0.3 VRHE, which was roughly 2 times higher than that of untreated ZnIn2S4. Correspondingly, the H-2 evolution rate was 2.74 mu mol cm(-2 )h(-1) for ZnIn2S4 NSA, in contrast to that of 0.96 mu mol cm(-2) h(-1) for pristine ZnIn2S4 NSA. The enhanced PEC performance was attributed to the enhancements of both the visible light absorption and carrier separation. Moreover, the S vacancies also acted as traps to retard the electron-hole recombination. This work provides a novel strategy for enhancing its PEC hydrogen evolution.
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