Abstract:The scalability processing of all functional layers in perovskite solar cells (PSCs) is one of the critical challenges in the commercialization of perovskite photovoltaic technology. In response to this issue, a large-area and high-quality gallium-doped tin oxide (Ga-SnOx) thin film is deposited by direct current magnetron sputtering and applied in CsPbBr3 all-inorganic PSCs as an electron transport layer (ETL). It is found that oxygen defects of SnOx can be remarkably offset by regulating oxygen flux and acceptor-like Ga doping level, resulting in higher carrier mobility and suitable energy level alignment, which is beneficial in accelerating electron extraction and suppressing charge recombination at the perovskite/ETL interface. At the optimal O2 flux (12 sccm) and Ga doping level (5%), the device based on sputtered Ga-SnOx ETL without any interface modification shows a power conversion efficiency (PCE) of 8.13%, which is significantly higher than that of undoped SnOx prepared by sputtering or spin coating. Furthermore, a PCE of 5.98% for a device with an active area of 1 cm2 is obtained, demonstrating great potential in fabricating efficient and stable large-area PSCs.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c19540?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c19540</a>.XPS spectra of Ga 2p, XRD, EDS, AFM, and mobility and carrier concentration of Ga-SnOx films deposited under different O2 fluxes; TEM, AFM, and mobility and carrier concentration of Ga-SnOx films deposited under different Ga doping levels; Tauc curve of sputtered SnOx; Tauc curve and UPS spectra of spin-coated SnOx film; absorption spectra, UPS, and Tauc curves of CsPbBr3 films; device architecture and photovoltaic performance parameters of devices; the contact angle, long-term stability of devices based on different ETLs; and schematic illustration of the capacitor-like device architecture used for estimating the trap density (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c19540/suppl_file/am0c19540_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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