Abstract:The bandgap value of materials has a profound impact on their properties and applications. Presently, with the development of high-throughput calculations, the bandgap of most materials is simulated and calculated using the density functional theory (DFT). Nevertheless, the bandgap of materials calculated in this way is often accompanied by large errors and long time consuming. Besides, the bandgap results obtained in different experimental environments are different. Therefore, finding a method to calculate the material bandgaps quickly and accurately is imminent. In this work, the Machine Learning (ML) method is used to predict the bandgap of semiconductor materials. Four different machine learning models are trained and tested through the feature processing, which can accurately predict the bandgap of the material by the hybrid density functional (HSE06) method, of which the average mean absolute error (MAE) is 0.142 eV and the coefficient of determination (R 2 ) is 0.977. Moreover, in order to better predict the bandgap of local small-sample semiconductor materials, the federal learning framework is employed to forecast small-sample datasets under different experimental conditions. Then, the four ML models are used to the prediction of materials and compared the results with the local calculation results. The results indicate that the bandgap error of compound semiconductor materials is 2∼10%, and the bandgap error of 2D heterojunctions semiconductor materials is 5∼30%. In addition, the ML models are also utilized to the Materials Project database, in which the bandgap of about 53170 semiconductor materials is successfully predicted. In conclusion, the work not only provides a method to accurately predict the bandgap of compound semiconductor materials, but also supplies an effective idea for the prediction of the bandgap of semiconductor materials in local small data sets, which accelerating the development of the application of semiconductor materials.

Study on Bandgap Predications of ABX3-type Perovskites by Machine Learning

Highly versatile and accurate machine learning methods for predicting perovskite properties

Predicting Perovskite Bandgap and Solar Cell Performance with Machine Learning

Machine learning-enhanced band gaps prediction for low-symmetry double and layered perovskites

Predicting the bandgap and efficiency of perovskite solar cells using machine learning methods

Predicting band gaps of ABN3 perovskites: an account from machine learning and first-principle DFT studies

Machine-Learning Prediction of the Computed Band Gaps of Double Perovskite Materials

Machine learning stability and band gap of lead-free halide double perovskite materials for perovskite solar cells

Machine Learning for Halide Perovskite Materials ABX3 (B = Pb, X = I, Br, Cl) Assessment of Structural Properties and Band Gap Engineering for Solar Energy

A Statistical Learning Framework for Accelerated Bandgap Prediction of Inorganic Compounds

Employing the Interpretable Ensemble Learning Approach to Predict the Bandgaps of the Halide Perovskites

A Domain Knowledge Enhanced Machine Learning Method to Predict the Properties of Halide Double Perovskite A2B+B3+X6

Predicting the Crystal Structure and Lattice Parameters of the Perovskite Materials via Different Machine Learning Models Based on Basic Atom Properties

High-Throughput Calculation and Machine Learning of Two-Dimensional Halide Perovskite Materials: Formation Energy and Band Gap

Predicting band gaps and band-edge positions of oxide perovskites using DFT and machine learning

Accurate prediction of semiconductor bandgaps based on machine learning and prediction of bandgaps for two-dimensional heterojunctions

Machine Learning‐Assisted Discovery of 2D Perovskites with Tailored Bandgap for Solar Cells

A Progressive Learning Method for Predicting the Band Gap of ABO3 Perovskites Using an Instrumental Variable