The Effects of Zn/Cd Ratio and Gqds Doping on the Photoelectric Performance of Znxcd1-Xse

Jiong Chen,Yuncui Wu,Yun Lei,Peng Du,Can Li,Beibei Du,Yongqin Wang,Linhui Luo,Shenxu Bao,Bingsuo Zou

DOI: https://doi.org/10.1016/j.mseb.2022.116058

2022-01-01

SSRN Electronic Journal

Abstract:A hydrothermal method was employed to synthesize Zn xCd 1-xSe and Zn xCd1-xSe/GQDs nanocomposites. The effects of various Zn/Cd ratios and GQDs doping on the performance of Zn x Cd 1-x Se were studied. The material composition, crystal structure and photoelectric properties could be adjusted by altering the Zn/Cd ratio. Zn x Cd 1-x Se material changed from hexagonal phase CdSe to near cubic phase ZnSe with the increased of Zn/Cd ratio from 0.1:0.9 to 0.9:0.1. At the same time, Zn x Cd 1-x Se material reached the higher photocurrent (3.82 μA cm-2) and lower interface impedance when the Zn/Cd atomic ratio was 0.9/0.1. Compared with the pre-doped, Zn 0.9 Cd 0.1 Se/GQDs composites exhibited up to a 2-fold increase in the photocurrent density, and achieved a smaller value in the electrochemical impedance, which indicated that the introduction of GQDs significantly improved the photoelectric performance of semiconductor.