Si/SnSe-Nanorod Heterojunction with Ultrafast Infrared Detection Enabled by Manipulating Photo-Induced Thermoelectric Behavior
Yingming Liu,Yunjie Liu,Yupeng Wu,Shirong Zhao,Fuhai Guo,Siqi Li,Weizhuo Yu,Guanchu Liu,Jingyi Hao,Zegao Wang,Keyou Yan,Lanzhong Hao
DOI: https://doi.org/10.1021/acsami.2c02557
IF: 9.5
2022-05-18
ACS Applied Materials & Interfaces
Abstract:Photothermal detectors have attracted tremendous research interest in uncooled infrared imaging technology but with a relatively slow response. Here, Si/SnSe-nanorod (Si/SnSe-NR) heterojunctions are fabricated as a photothermal detector to realize high-performance infrared response beyond the bandgap limitation. Vertically standing SnSe-NR arrays are deposited on Si by a sputtering method. Through manipulating the photoinduced thermoelectric (PTE) behavior along the <i>c</i>-axis, the Si/SnSe-NRs heterojunction exhibits a unique four-stage photoresponse with a high photoresponsivity of 106.3 V W<sup>-1</sup> and high optical detectivity of 1.9 × 10<sup>10</sup> cm Hz<sup>1/2</sup> W<sup>-1</sup> under 1342 nm illumination. Importantly, an ultrafast infrared photothermal response is achieved with the rise/fall time of 11.3/258.7 μs. Moreover, the coupling effect between the PTE behavior and external thermal excitation enables an improved response by 288.4%. The work not only offers a new strategy to develop high-speed photothermal detectors but also performs a deep understanding of the PTE behavior in a heterojunction system.
materials science, multidisciplinary,nanoscience & nanotechnology