Abstract:Amorphous silicon films prepared by electron beam evaporation have systematically and substantially greater atomic density for higher thickness, higher growth temperature, and slower deposition rate, reaching the density of crystalline Si when films of thickness greater than ~300 nm are grown at 425 $^{\circ}$C and at <1 $Å$/sec. A combination of spectroscopic techniques provide insight into atomic disorder, local strains, dangling bonds, and nanovoids. Electron diffraction shows that the short-range order of the amorphous silicon is similar at all growth temperatures, but fluctuation electron microscopy shows that films grown above room-temperature show a form of medium-range order not previously observed in amorphous silicon. Atomic disorder and local strain obtained from Raman spectroscopy reduce with increasing growth temperature and show a non-monotonic dependence on thickness. Dangling bond density decreases with increasing growth temperature and is only mildly dependent on thickness. Positron annihilation Doppler broadening spectroscopy and electron energy loss spectroscopy show that nanovoids, and not density variations within the network, are responsible for reduced atomic density. Specific heat and mechanical loss measurements, which quantify the density of tunneling two-level systems, in combination with the structural data, suggest that two-level systems in amorphous silicon films are associated with nanovoids and their surroundings; which are in essence loosely bonded regions where atoms are less constrained.

How do the Two-Level-System Distributions Arise in Amorphous Solids?

Identification of structural motifs as tunneling two-level systems in amorphous alumina at low temperatures

Structural tunability and origin of two-level systems in amorphous silicon

Anisotropic glass-like properties in tetragonal disordered crystals

Influence of Random Internal Fields on the Tunneling of OH Defects in NaCl Crystals

Extreme Spontaneous Deformations of Active Crystals

Tetratic Phase in 2D Crystals of Squares

Structural Amorphization-Induced Topological Order

Thermodynamics, formation dynamics and structural correlations in the bulk amorphous phase of the phase-field crystal model

Symmetry Breaking and Topological Defect Formation in Ion Coulomb Crystals

Multilevel Tunnelling Systems and Fractal Clustering in the Low-Temperature Mixed Alkali-Silicate Glasses

Strength of disordered solids

Structural dynamics of a model of amorphous silicon

Giant Two-Level Systems in a Granular Superconductor

Symmetry breaking in two dimensions on ultra-fast time scales

Kibble-Zurek mechanism in curved elastic surface crystals

Relating local structures, energies, and occurrence probabilities in a two-dimensional silica network

Mechanistic Transition from Phonon Propagation to Thermal Hopping in Two-Dimensional Solids

Metallic bonding in close packed structures: structural frustration from a hidden gauge symmetry

Spatial variation of short-range order in amorphous intergranular complexions

Abstract Submitted for the MAR16 Meeting of The American Physical Society Modeling Shear Banding in Amorphous Solids, from Atomistic to Continuum1