Suppression of ferromagnetism and influence of disorder in silicon-substituted CeRh6Ge4
Y. J. Zhang,Z. Y. Nie,R. Li,Y. C. Li,D. L. Yang,B. Shen,C. Ye,H. Su,R. Shi,S. Y. Wang,F. Steglich,M. Smidman,H. Q. Yuan
2022-01-01
Abstract:Y. J. Zhang, 2 Z. Y. Nie, R. Li, Y. C. Li, D. L. Yang, B. Shen, C. Ye, H. Su, R. Shi, S. Y. Wang, F. Steglich, 4 M. Smidman, 5, ∗ and H. Q. Yuan 5, 6, † Institute for Advanced Materials, Hubei Normal University, Huangshi 435002, China Center for Correlated Matter and Department of Physics, Zhejiang University, Hangzhou 310058, China Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China Max Planck Institute for Chemical Physics of Solids, Dresden, Germany Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310058, China State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310058, China (Dated: March 1, 2022)