Suppression of Ferromagnetism and Influence of Disorder in Silicon-Substituted CeRh6Ge4

Y. J. Zhang,Z. Y. Nie,R. Li,Y. C. Li,D. L. Yang,B. Shen,Y. Chen,F. Du,S. S. Luo,H. Su,R. Shi,S. Y. Wang,M. Nicklas,F. Steglich,M. Smidman,H. Q. Yuan
DOI: https://doi.org/10.1103/physrevb.106.054409
2022-01-01
Abstract:We report a study of isoelectronic chemical substitution in the recently discovered quantum critical ferromagnet CeRh6Ge4. Upon silicon doping, the ferromagnetic ordering temperature of CeRh6(Ge1-xSix)4 is continuously suppressed, and no transition is observed beyond xc approximate to 0.125. Non-Fermi-liquid behavior with C/T proportional to ln(T */T ) is observed close to xc, indicating the existence of strong quantum fluctuations, while the T-linear behavior observed upon pressurizing the parent compound is absent in the resistivity, which is likely a consequence of the disorder induced by silicon doping. Our findings show the effects of disorder on the unusual ferromagnetic quantum criticality in CeRh6Ge4, and provide further evidence for understanding the origin of this behavior.
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