Abstract:A thin-film transistors (TFTs) integrated gate driver which can work well at low temperature down to is proposed and demonstrated. The carry signal (CN) of the driver, being generated through the voltage bootstrapping approach using a CN-connected capacitor, is used to pre-charge the following stage of the driver. As the rising and falling time of CN is much shorter than that of the gate driving signal GN, the bootstrapping voltage is increased and voltage loss of the pre-charge transistor can be much reduced, to avoid the driver's malfunction at low temperature. This structure further benefits maintaining the driving speed over long operation time at high temperature. On the other hand, the GN, instead of CN, is used to reset the gate driver to suppress the voltage feed-through effects. One single stage of the driver consists of 11 TFTs and 2 capacitors, driven by 4 clock signals with the duty ratio of 25%. An a-Si:H TFTs implemented single stage circuit of the driver occupies an area of 250 . Measurements show that the output voltage magnitude can be maintained well when temperature varies from to 80 °C. Moreover, the rising-time and falling-time increase of the output pulse are both less than after 240 hours of the accelerated high temperature aging operations.

P‐5.3: Design of Amorphous Silicon Thin‐Film Transistor Gate Driver Circuit with High Reliability and Narrow Border for Middle Size Liquid Crystal Display

30.2: Amorphous Silicon Thin‐Film Transistor Gate Driver Circuit Design with Time Division Driving Method for In‐Cell Touch Display Panel

Design of Integrated Amorphous-Silicon Thin-Film Transistor Gate Driver

A Compact Integrated Hydrogenated Amorphous Silicon Gate Driver For Tft-Lcd

Integrated A-Si: H Gate Driver with Low-Level Holding Tfts Biased under Bipolar Pulses

P‐12: A‐Si:H TFT Gate Driver with Shared Dual Pull‐Down Units for Large‐Sized TFT‐LCD Applications

32.3: Integrated Gate Driver Working at Low Temperature for Vehicle Displays

Robust Gate Driver on Array Based on Amorphous IGZO Thin-Film Transistor for Large Size High-Resolution Liquid Crystal Displays

Novel Integrated Gate Driver Design Based on A-Igzo TFTs

Implementation of an A-Si:H TFT Gate Driver Using a Five-Transistor Integrated Approach

A New Integrated Gate Driver with Shift Register Circuits Employing 4 Clocks for 14.1-Inch TFT-LCD

A High-Reliability Gate Driver Integrated in Flexible AMOLED Display by IZO TFTs

P‐5: 27‐inch Ultra‐Narrow‐Border LCD with a Two‐Stage Output Gate Driver Circuit

A compact gate driver with bifunctional capacitor for in-cell touch mobile display

P‐48: A Simple Low Temperature Workable a‐Si:H TFT Integrated Gate Driver on Array

P‐1.20: Stability of Hydrogenated Amorphous Silicon Thin‐Film Transistors in High‐Brightness Liquid Crystal Displays

12-4: TFT Integrated Gate Driver with VTHShift Compensable Low-Level Holding Unit

A-Si TFT Integrated Gate Driver Workable at −40°C Using Bootstrapped Carry Signal

Amorphous IGZO Thin-Film Transistor Gate Driver in Array for Ultra-Narrow Border Displays

1.3: An Evaluation Method of TFT Integrated Gate Driver for UHD Display

P-5.2: A gate driver circuit with a-IGZO TFTs for a 15-inch AMOLED display