Abstract:Improving the CO sensitivity for SnO 2 -based gas sensors has always been worthy of attention. It was expected to enhance CO sensing performance via taking advantages of the large specific surface area with 8mol% In 3+ doping modification and the heterojunction effect by combining Sn 0.92 In 0.08 O 2 (SI 0.08 O) with In 2 O 3 to construct n-n heterostructures. In this work, SI 0.08 O-In 2 O 3 nanocomposites (xISI 0.08 O, x=0, 20, 30, 40 and 50) were successfully prepared by sol-gel and grinding-annealing methods. The effect of In 2 O 3 content on CO sensitivity was investigated. Among these materials, a superior gas sensitivity of 40ISI 0.08 O was realized with the response value of 15.2 towards 3000 ppm of CO, which was over 1.5 times higher than that of SI 0.08 O, and the response time was 18s. Besides, by tuning the In 2 O 3 content in xISI 0.08 O, the selectivity towards CO could increase up to 5 times that of pristine SnO 2 . The gas sensing mechanism was discussed in detail based on the results of BET, XPS and UPS tests. The improved gas sensing performance of 40ISI 0.08 O was mainly ascribed to the large specific surface area, the successful construction of electronic transmission channel, the formation of abundant number of SI 0.08 O-In 2 O 3 heterojunctions and the high grain boundary barrier at the interface between SI 0.08 O and In 2 O 3 .

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Fabrication of SnO2-SnO Nanocomposites with P-N Heterojunctions for the Low-Temperature Sensing of NO2 Gas.

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Low temperature operable and high performing Pd-ZnO thin films sputtered at room temperature for ultrafast detection of CO gas