Tuning the electronic properties of epitaxial strained CaFeO_3−δ thin films

Tongtong Huang,Yujia Wang,Haobo Li,Meng Wang,Yingjie Lyu,Shengchun Shen,Nianpeng Lu,Qing He,Pu Yu

DOI: https://doi.org/10.1063/1.5098025

IF: 4

2019-01-01

Applied Physics Letters

Abstract:Strain engineering of transition metal oxides due to their desirable properties has long been a focal point in both physics and material sciences. Here, we investigate the strain dependence of electronic and optical properties of the high valence iron-based perovskite CaFeO3−δ. Using substrates with various lattice constants, we achieve a wide range of tunable epitaxial strain states in CaFeO3−δ thin films ranging from compressive −0.37% to tensile 3.58%. Electrical transport and optical absorption measurements demonstrate a distinct strain-dependent behavior, in which larger tensile strain leads to higher electrical resistivity and a larger optical bandgap. We attribute these modulations to tensile strain suppressed p-d hybridization in CaFeO3−δ, as evidenced by soft X-ray absorption spectra measurements.