Abstract:In this work, a tunable luminescence color from yellow to orange of photoluminescence (PL), long persistent luminescence (LPL), and photostimulated luminescence (PSL) is successfully achieved in BaGa2O4:Bi3+ phosphors with the introduction of Sr2+ ions as secondary cations. It is confirmed that broad-band emissions located at 500 and 600 nm originate from the occupation of Bi3+ ions at different lattice sites in the BaGa2O4 host matrix. The replacement of Sr2+ for Ba2+ ions makes the emission red-shift from 600 to 650 nm; moreover, two additional emissions appeare at 743 and 810 nm due to the occupational preference of Bi3+ ions at Ga3+ sites. Furthermore, the doped Sr2+ ions promote the reconstruction of the trapping centers, which conduces to the fundamental improvement of the optical storage capacity behavior of Bi3+-doped phosphors. Our results clarify the dependence of the luminescence performance on the crystal sites of Bi3+ ions with fascinating broad-band emissions in the BaGa2O4:0.01Bi3+ host matrix and will benefit the design and exploration of Bi3+-doped solid solutions for optical storage applications.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.inorgchem.1c02271.XRD patterns and the normalized PL spectra of Ba1–xSrxGa2O4:0.01Bi3+ (x = 0, 0.4, 0.6, 0.8, and 1.0) phosphors; the calculated electronic band structure and the optical absorption spectra of the BaGa2O4 and Ba0.85Sr0.15Ga2O4 hosts; PLE spectra of Ba0.94Sr0.05Ga2O4:0.01Bi3+ monitored at different emission; PL spectra of Ba0.94Sr0.05Ga2O4:yBi3+ (y = 0.005, 0.010, 0.015, 0.020, 0.030) phosphors; and LPL spectra of Ba0.94Sr0.05Ga2O4:0.01Bi3+ (Figures S1–S6) (PDF)This article has not yet been cited by other publications.

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