Oxygen vacancies on the surface of H<sub>x</sub>WO<sub>3−y</sub> for enhanced charge storage

Haiyan Wang,Ruxue Fan,Jingyu Miao,Jiayi Chen,Shanjun Mao,Jiang Deng,Yong Wang
DOI: https://doi.org/10.1039/c8ta00981c
IF: 11.9
2018-01-01
Journal of Materials Chemistry A
Abstract:The dominant role of surface oxygen vacancies (OVs) in improving energy storage is underscored by comparing the OV-mediated charge storage performance of surface and bulk defective HxWO3−y with that of WO3 and bulk defective e-HxWO3−y.
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