PbI2 band gap engineering by gel incorporation

Chong Hu,Tao Ye,Yujing Liu,Jie Ren,Xinyi Jin,Hongzheng Chen,Hanying Li

DOI: https://doi.org/10.1039/c7qm00509a

IF: 8.6834

2018-01-01

Materials Chemistry Frontiers

Abstract:Band gap shifts of PbI2 were accomplished via gel incorporation, and the mechanism of these shifts was elucidated.

What problem does this paper attempt to address?

PbI2 band gap engineering by gel incorporation

Chong Hu,Tao Ye,Yujing Liu,Jie Ren,Xinyi Jin,Hongzheng Chen,Hanying Li

DOI: https://doi.org/10.1039/c7qm00509a

IF: 8.6834

2018-01-01

Materials Chemistry Frontiers

Abstract:Incorporation of guest materials into semiconducting single crystalline hosts leads to the formation of semiconducting single-crystal composites. However, limited efforts have been made to comprehensively investigate the property of these potential functionalized single-crystal composites. Herein, PbI2/gel single-crystal composites have been successfully prepared. Diffuse reflectance spectra show a clear increase in the band gap of PbI2 after gel incorporation. The band gap is further increased through expanding the area of host/guest interfaces or enhancing the interatomic forces at the interfaces. The interatomic forces (electrostatic interaction) at the host/guest interfaces are attributed to this band gap shift. As such, this study provides a novel and facile way for band gap engineering by gel incorporation.
Large-scale 2D PbI 2 monolayers: experimental realization and their indirect band-gap related properties

Mianzeng Zhong,Shuai Zhang,Le Huang,Jingbi You,Zhongming Wei,Xinfeng Liu,Jingbo Li

DOI: https://doi.org/10.1039/c6nr07924e

IF: 6.7

2017-01-01

Nanoscale

Abstract:Large-scale PbI2 monolayers and few layers with high crystallinity and a uniform hexagonal shape were synthesized via a facile physical vapour deposition (PVD) method. The transition from a direct band-gap in the bulk to an indirect band-gap in the monolayer is verified by photoluminescence (PL) spectra, optoelectronic properties, and first principle calculations.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Gel-incorporated PbS and PbI2 Single-Crystals

Wei Liu,Yu-Jing Liu,Liao Chen,Tao Ye,Hong-Zheng Chen,Han-Ying Li

DOI: https://doi.org/10.1016/j.cclet.2015.01.020

IF: 9.1

2015-01-01

Chinese Chemical Letters

Abstract:Gel-incorporated single-crystals provide unique combinational properties of long-range order and composite structures,which is desired for semiconducting and conducting materials.However,the reported gel-incorporated single-crystals are limited to insulating crystals.Here,we examine crystals of two typical semiconductors,lead sulfide（PbS） and lead iodide（Pbl2）,grown from both silica gels and agarose gels.In all the four crystal-gel pairs,single-crystals of the cubic phase of PbS and the hexagonal phase of Pbl2 were obtained according to the X-ray diffraction analysis.Dissolution of the gel-grown crystals exposed insoluble materials with the shape similar to the original crystals,indicative of gelincorporation inside the crystals.As such,this work creates a facile strategy to construct 3D heterostructures inside semiconducting single-crystals without destroying their long-range order.
Giant Bandgap Engineering in Two-Dimensional Ferroelectric Α-In2se3.

Jiaxiang Zhang,Xuanlin Zhang,Yu Wang,Peng Cheng,Baojie Feng,Kehui Wu,Yunhao Lu,Lan Chen

DOI: https://doi.org/10.1021/acs.jpclett.2c00618

IF: 6.888

2022-01-01

The Journal of Physical Chemistry Letters

Abstract:Bandgap engineering is an efficient strategy for controlling the physical properties of semiconductor materials. For flexible two-dimensional (2D) materials, strain provides a nondestructive and adjustable method for bandgap adjustment. Here, we propose that, in 2D materials with out-of-plane ferroelectricity, the antibonding nature of the valence band maximum and conduction band minimum and polarized charge distribution induced by ferroelectricity give rise to giant changes of the bandgap under curvature strain field. This hypothesis was proven by scanning tunneling microscopy/spectroscopy measurements on monolayer α-In2Se3 that revealed that the bandgap of α-In2Se3 increases significantly due to bending. Both experiments and theoretical calculations indicated that the bandgap increases monotonically with the degree of bending of the α-In2Se3 layer. Our work suggests that bending is an effective method for tuning the gaps of 2D ferroelectric materials, providing a new platform for bandgap engineering under the combination of ferroelectricity and strain field.
Bandgap Engineering of Ingaasp/Inp Laser Structure by Argon Plasma Induced Point Defects

Mohammad Kaleem,Xin Zhang,Jian-Jun He

DOI: https://doi.org/10.1364/acpc.2012.af4a.12

2012-01-01

Abstract:Blue shift of the bandgap in InGaAsP/InP quantum well structure is demonstrated experimentally. The technique depends upon generation of point defects via plasma induced damage during deposition of sputtered SiO2 followed by rapid thermal annealing.
Polymer Band Gap Engineering and Its Applications

杨慕杰,张庆辉,路胜利

DOI: https://doi.org/10.3969/j.issn.1001-7119.2004.03.002

2004-01-01

Abstract:Polymer band gap engineering is a new field on semiconducting polymers research.It is important for applications of semiconducting polymers and improvement of properties of their devices.The reason to carry out band gap engineering is explained,and its applications in conducting polymers, polymer solar cells,light-emitting diodes(LEDs),field-effect transistors (FETs) ,etc. are described briefly.
Tuning electronic and optical properties of CsPbI3 by applying strain: A first-principles theoretical study

Huijuan Jing,Rongjian Sa,Ge Xu

DOI: https://doi.org/10.1016/j.cplett.2019.136642

IF: 2.719

2019-10-01

Chemical Physics Letters

Abstract:In this study, the effect of hydrostatic strain on the structural, electronic and optical properties of CsPbI3 was investigated by using first-principles calculations. The calculated results show that the band gap of CsPbI3 can be tuned from 1.03 to 2.14 eV when the strain ranges from −5% to 5%. A suitable band gap (1.34 eV) of CsPbI3 can be obtained under a strain of −3% (1.40 GPa). The calculated elastic constants further imply that this compound is stable under the abovementioned condition. Moreover, bandgap narrowing leads to the stronger optical absorption in the visible light region.

chemistry, physical,physics, atomic, molecular & chemical
UV Laser Induced Selective-Area Bandgap Engineering for Fabrication of InGaAsP/InP Laser Devices

Mohammad Kaleem,Xin Zhang,Yuan Zhuang,Jian-Jun He,Neng Liu,Jan J. Dubowski

DOI: https://doi.org/10.1016/j.optlastec.2013.03.012

IF: 4.939

2013-01-01

Optics & Laser Technology

Abstract:Large bandgap blueshifts in III–V quantum semiconductor microstructures are achievable with UV-laser induced quantum well intermixing (QWI). We report on the application of the UV-laser QWI technique to investigate bandgap engineering of a compressively strained InGaAsP/InP quantum well laser microstructure. The attractive performance of the technique, determined by the ability of a laser to generate point defects, has been demonstrated with bandgap blueshifts reaching 142nm, with enhancement of photoluminescence intensity. We have also investigated this technique for post-growth wafer level processing designed for the fabrication of laser diodes.
The strain regulated physical properties of PbI2/g-C3N4for potential optoelectronic device.

Xiunan Chen,Yuhong Huang,Zunyi Deng,Haili Zhao,Fei Ma,Jianmin Zhang,Xiumei Wei

DOI: https://doi.org/10.1088/1361-648X/ad33ef

2024-01-01

Abstract:The van der Waals (vdW) heterostructures of Z-scheme PbI2/g-C3N4with an indirect bandgap have gained much attention in recent years due to their unique properties and potential applications in various fields. However, the optoelectronic characteristics and strain-modulated effects are not yet fully understood. By considering this, six stacking models of PbI2/g-C3N4are proposed and the stablest structure is selected for further investigation. The uniaxial and biaxial strains (-10%-10%) regulated band arrangement, charge distribution, optical absorption in the framework of density functional theory are systematically explored. The compressive uniaxial strain of -8.55% changes the band type from II→I, and the biaxial strains of -7.12%, -5.25%, 8.91% change the band type in a way of II→I→II→I, acting like the 'band-pass filter'. The uniaxial strains except -10% compressive strain, and the -6%, -4%, 2%, 4%, 10% biaxial strains will enhance the light absorption of PbI2/g-C3N4. The exerted strains on PbI2/g-C3N4generate different power conversion efficiency (ηPCE) values ranging from 3.64% to 25.61%, and the maximumηPCEis generated by -6% biaxial strain. The results of this study will pave the way for the development of new electronic and optoelectronic materials with customized properties in photocatalytic field and optoelectronic devices.
The strain regulated physical properties of PbI2/g-C3N4 for potential optoelectronic device

Xiunan Chen,Yuhong Huang,Zun-Yi Deng,Haili Zhao,Fei Ma,Jian-Min Zhang,Xiumei Wei

DOI: https://doi.org/10.1088/1361-648x/ad33ef

2024-03-15

Journal of Physics Condensed Matter

Abstract:The van der Waals (vdW) heterostructures of Z-scheme PbI2/g-C3N4 with an indirect bandgap have gained much attention in recent years due to their unique properties and potential applications in various fields. However, the optoelectronic characteristics and strain-modulated effects are not yet fully understood. By considering this, six stacking models of PbI2/g-C3N4 are proposed and the stablest structure is selected for further investigation. The uniaxial and biaxial strains (-10% ~ 10%) regulated band arrangement, charge distribution, optical absorption in the framework of density functional theory (DFT) are systematically explored. The compressive uniaxial strain of -8.55% changes the band type from II→I, and the biaxial strains of -7.12%, -5.25%, 8.91% change the band type in a way of II→I→II→I, acting like the "band-pass filter". The uniaxial strains except -10% compressive strain, and the -6%, -4%, 2%, 4%, 10% biaxial strains will enchance the light absorption of PbI2/g-C3N4. The exerted strains on PbI2/g-C3N4 generate different power conversion efficiency (ηPCE) values ranging from 3.64% to 25.61%, and the maximum ηPCE is generated by -6% biaxial strain. The results of this study will pave the way for the development of new electronic and optoelectronic materials with customized properties in photocatalytic field and optoelectronic devices.

physics, condensed matter
Uncovering a Vital Band Gap Mechanism of Pnictides

Jindong Chen,Qingchen Wu,Haotian Tian,Xiaotian Jiang,Feng Xu,Xin Zhao,Zheshuai Lin,Min Luo,Ning Ye

DOI: https://doi.org/10.1002/advs.202105787

IF: 15.1

2022-03-31

Advanced Science

Abstract:Pnictides are superior infrared (IR) nonlinear optical (NLO) material candidates, but the exploration of NLO pnictides is still tardy due to lack of rational material design strategies. An in-depth understanding structure-performance relationship is urgent for designing novel and eminent pnictide NLO materials. Herein, this work unravels a vital band gap mechanism of pnictides, namely P atom with low coordination numbers (2 CN) will cause the decrease of band gap due to the delocalization of non-bonding electron pairs. Accordingly, a general design paradigm for NLO pnictides, ionicity-covalency-metallicity regulation is proposed for designing wide-band gap NLO pnictides with maintained SHG effect. Driven by this idea, millimeter-level crystals of MgSiP2 are synthesized with a wide band gap (2.34 eV), a strong NLO performance (3.5 x AgGaS2 ), and a wide IR transparency range (0.53-10.3 µm). This work provides an essential guidance for the future design and synthesis of NLO pnictides, and also opens a new perspective at Zintl chemistry important for other material fields.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
A first-principle study on the band structure of GePb alloys

Shilong Xia,Jiulong Yu,Jinghang Wang,Wei Huang,Yu-Hua Wen,Cheng Li,Jun Li,Songyan Chen

DOI: https://doi.org/10.1088/1361-6641/ad929f

IF: 2.048

2024-11-24

Semiconductor Science and Technology

Abstract:Single crystal GePb alloys have been considered as potential direct bandgap materials for optoelectronics application. In this work, density-functional theory (DFT) calculations were performed to investigate the crystalline and electronic structures of the GePb alloys. The lattice constants of the unstrained GePb alloys are found positively deviating from Vegard's law with a bowing coefficient of 0.587 Å. GePb has a higher Poisson's ratios than GeSn with a similar alloying concentration. With the increasing Pb concentration x in Ge1-xPbx, a new alloying energy level brought by Pb appears at the bottom of the conduction band and continuously decreases. The new energy level is constructed to a new valley as compared to the initial Γ valley and the new energy level is acquiring its higher spectra weights with increasing Pb concentration. An indirect-to-direct bandgap transition occurs with a Pb concentration of 3.3%. The effective masses of holes and electrons in the GePb Γ valley are calculated to decrease with the increasing Pb concentration, while the effective masses of the electrons in the L valley only change slightly. The small effective masses of the electrons in the Γ valley are favorable for high-speed GePb device application.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
Transparency of Band-Gap-shifted InGaAsP/lnP Quantum-Well Waveguides

JJ He,ES Koteles,M Davis,PJ Poole,M Dion,Y Feng,S Charbonneau,P Piva,M Buchanan,R Goldberg,I Mitchell

DOI: https://doi.org/10.1139/p96-827

1996-01-01

Canadian Journal of Physics

Abstract:The properties of band-gap-shifted InGaAsP/InP quantum-well waveguides were investigated. A 90 nm blue-shift of the band gap was obtained by phosphorus ion implantation followed by rapid thermal annealing. It was shown that the absorption constant at the original band edge was reduced from 110 to only 4 cm−1. No waveguide excess loss was observed due to the QW-intermixing process. Good electrical properties of the pin diode were also maintained.
Band Gap and Electronic Properties of Wurtzite-Structure ZnO Co-Doped with IIA and IIIA

T. Han,F. Y. Meng,S. Zhang,X. M. Cheng,J. I. Oh

DOI: https://doi.org/10.1063/1.3627233

IF: 2.877

2011-01-01

Journal of Applied Physics

Abstract:We report the bandgap and electronic properties of wurtzite ZnO doped with elements IIA or/and IIIA, investigated using both theoretical and experimental methods. With wurtzite ZnO co-doped with B and Mg (denoted as ZnO:[B,Mg]) grown via metalorganic chemical vapor deposition, we have observed that both the bandgap and the conductivity can be widely tunable with the doping levels. From first-principles calculations of wurtzite ZnO:Mg, we show that IIA doping elements have a great impact on the widening of the bandgap. Also, from a newly developed calculation method for investigating the electronic properties of wurtzite ZnO:Al, we have found that IIIA doping elements play an important role in tailoring the conductivity.
Band-Gap Engineering in High-Temperature Boron-Rich Icosahedral Compounds

Hongwei Wang,Qi An

DOI: https://doi.org/10.1021/acs.jpcc.9b02254

2019-01-01

The Journal of Physical Chemistry C

Abstract:Band-gap engineering is essential for boron-rich icosahedral compounds for high-temperature applications such as beta-voltaic devices and thermoelectrics, and the extreme complex chemical bonding in these icosahedral compounds leads to intriguing electronic properties. Here, we first employed quantum mechanics simulations to determine the electronic states that control the valence band maximum and conduction band minimum of these icosahedral compounds, as well as the detailed band structures. Then, we examined the band-gap modulation by applying twin boundary, chemical substitution, structure arrangement, and hydrostatic pressure, with which the band gaps of these icosahedral compounds can be engineered wider or narrower to a large extent. Particularly, we find that some icosahedral compounds show an increased band gap with the applied hydrostatic pressure, an unusual phenomenon compared to the conventional inorganic semiconductors. Our study provides a fundamental understanding of the electronic properties of icosahedral solids and an effective way to tune their band gaps for designing promising optical, thermoelectric, and beta-voltaic devices at extremely high temperature and radiation conditions.
Bandgap Engineering of InSb by N Incorporation by Metal-Organic Chemical Vapor Deposition

Y. J. Jin,X. H. Tang,C. Ke,S. Y. Yu,D. H. Zhang

DOI: https://doi.org/10.1016/j.jallcom.2018.04.287

IF: 6.2

2018-01-01

Journal of Alloys and Compounds

Abstract:Bandgap engineering is necessary for the application of InSb in long wavelength infrared photodetection. InSbN alloys hetero-epitaxially were therefore deposited on GaAs substrate by metal-organic chemical vapor deposition (MOCVD), expecting a large band gap reduction by N incorporation for long wavelength infrared photodetection. The effects of post annealing treatment on the structural and optical properties of the grown InSbN alloy have been well studied. Photoluminescence measurement (PL) indicated that the longest PL wavelength obtained at 10 K is similar to 7.2 mu m for the InSbN alloys, which manifests an extension of PL wavelength as large as 1.8 mu m in comparison to the undoped InSb epilayers, suggesting a successful band gap reduction by the N incorporation. X-ray photoelectron spectroscopy (XPS) measurements show that three kinds of nitrogen bonds co-exist in the alloys and their percentages vary with annealing conditions. This observation can explain the peak shifts of X-ray diffraction (XRD) and PL spectra. The comparison to our previous works reveals that the InSbN alloys grown on GaAs substrate can achieve more nitrogen incorporation and band gap reduction than the alloys grown on InSb and GaSb substrates. (C) 2018 Elsevier B.V. All rights reserved.
Band Gap Engineering of Binary and Cobalt‐Doped PbS Thin Films Integrated by SILAR Method for Optoelectronic Potentials

Tanzeela Fazal,Sajid Mahmood,Bushra Ismail,Mazloom Shah,Ammar Zidan,Ali Bahadur,Shahid Iqbal,Komal Rizwan,Shahid Alam,Fayyaz Ali,Abd‐ElAziem Farouk,Salman Aloufi

DOI: https://doi.org/10.1002/jemt.24750

2024-12-04

Microscopy Research and Technique

Abstract:In this case, ionic layer adsorption and reaction were used to produce undoped and a series of cobalt‐doped PbS thin films on glass substrates. The films were adherent to the substrate and were compact, and crack‐free with shiny silver color. Thin films of PbS, both undoped and cobalt‐doped (Co‐PbS), were produced on glass substrates using the straightforward and controllable approach of sequential ionic layer adsorption and reaction (SILAR). The reactive substances employed to deposit the PbS thin films were lead nitrate (Pb(NO3)2), cobalt nitrate (Co(NO3)2(H2O)6), sodium thiosulphate (Na2S2O3) and H2O for different dipping concentrations of lead and cobalt. The films were adherent to the substrate and were compact, and crack‐free with a shiny silver color. The films were structurally characterized by XRD and were found well crystallized according to the face‐centered cubic formation. The films were optically characterized by the UV–Vis. spectrophotometer and absorption were found stronger in the UV and UV–Vis. region and then diminishes. Band gaps were determined to be between 1.8 eV and 2.2 eV, making them significant materials with the option of band gap engineering according to the desire by manipulating the compositions.

biology,microscopy,anatomy & morphology
Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals

Yan Sun,Zishu Zhou,Zhen Huang,Jiangbin Wu,Liujiang Zhou,Yang Cheng,Jinqiu Liu,Chao Zhu,Maotao Yu,Peng Yu,Wei Zhu,Yue Liu,Jian Zhou,Bowen Liu,Hongguang Xie,Yi Cao,Hai Li,Xinran Wang,Kaihui Liu,Xiaoyong Wang,Jianpu Wang,Lin Wang,Wei Huang

DOI: https://doi.org/10.1002/adma.201806562

IF: 29.4

2019-01-01

Advanced Materials

Abstract:To explore new constituents in two-dimensional materials and to combine their best in van der Waals heterostructures, are in great demand as being unique platform to discover new physical phenomena and to design novel functionalities in interface-based devices. Herein, PbI2 crystals as thin as few-layers are first synthesized, particularly through a facile low-temperature solution approach with the crystals of large size, regular shape, different thicknesses and high-yields. As a prototypical demonstration of flexible band engineering of PbI2-based interfacial semiconductors, these PbI2 crystals are subsequently assembled with several transition metal dichalcogenide monolayers. The photoluminescence of MoS2 is strongly enhanced in MoS2/PbI2 stacks, while a dramatic photoluminescence quenching of WS2 and WSe2 is revealed in WS2/PbI2 and WSe2/PbI2 stacks. This is attributed to the effective heterojunction formation between PbI2 and these monolayers, but type I band alignment in MoS2/PbI2 stacks where fast-transferred charge carriers accumulate in MoS2 with high emission efficiency, and type II in WS2/PbI2 and WSe2/PbI2 stacks with separated electrons and holes suitable for light harvesting. Our results demonstrate that MoS2, WS2, WSe2 monolayers with very similar electronic structures themselves, show completely distinct light-matter interactions when interfacing with PbI2, providing unprecedent capabilities to engineer the device performance of two-dimensional heterostructures.
Single Layer Lead Iodide: Computational Exploration of Structural, Electronic and Optical Properties, Strain Induced Band Modulation and the Role of Spin-Orbital-Coupling

Mei Zhou,Wenhui Duan,Ying Chen,Aijun Du

DOI: https://doi.org/10.1039/c5nr04431f

2015-01-01

Abstract:Graphitic like layered materials exhibit intriguing electronic structures and thus the search for new types of two-dimensional (2D) monolayer materials is of great interest for developing novel nano-devices. By using density functional theory (DFT) method, here we for the first time investigate the structure, stability, electronic and optical properties of monolayer lead iodide (PbI2). The stability of PbI2 monolayer is first confirmed by phonon dispersion calculation. Compared to the calculation using generalized gradient approximation, screened hybrid functional and spin-orbit coupling effects can not only predicts an accurate bandgap (2.63 eV), but also the correct position of valence and conduction band edges. The biaxial strain can tune its bandgap size in a wide range from 1 eV to 3 eV, which can be understood by the strain induced uniformly change of electric field between Pb and I atomic layer. The calculated imaginary part of the dielectric function of 2D graphene/PbI2 van der Waals type hetero-structure shows significant red shift of absorption edge compared to that of a pure monolayer PbI2. Our findings highlight a new interesting 2D material with potential applications in nanoelectronics and optoelectronics.
Strain-induced Electronic Structures and Band-gap of Few-layer AgInP2S6

Jiapeng Zhen,Qiushi Huang,Ying Liu,Xinyu Luo,Xiande Zheng,Silin Guo,Jing Qiu,Guanjun Liu

DOI: https://doi.org/10.1088/1361-6528/acf6c5

IF: 3.5

2023-09-07

Nanotechnology

Abstract:The band gap and mechanical control ability of two-dimensional materials largely determine the application value of two-dimensional devices in optical and electronic properties, so the bandgap controllability of two-dimensional materials broadens the application range of multi-functional devices. In the layered vdW material AgInP2S6, the band gap can be adjusted by the number of layers and flexible strain, and the few layers AgInP2S6 have discrete band gap values, which are also relevant for optoelectronic applications. In the strain range of up to 2.7% applied, the band gap can be adjusted, and the film is relatively stable under strain. We further analyzed the physical mechanism of flexible strain band gap regulation and found that strain-regulation reduced the band gap and increased the chemical bond length. These studies open up new opportunities for the future development of vdW material photoelectric resonators represented by AgInP2S6, and have important reference value.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology

PbI<sub>2</sub> band gap engineering by gel incorporation

PbI2 band gap engineering by gel incorporation

Large-scale 2D PbI 2 monolayers: experimental realization and their indirect band-gap related properties

Gel-incorporated PbS and PbI2 Single-Crystals

Giant Bandgap Engineering in Two-Dimensional Ferroelectric Α-In2se3.

Bandgap Engineering of Ingaasp/Inp Laser Structure by Argon Plasma Induced Point Defects

Polymer Band Gap Engineering and Its Applications

Tuning electronic and optical properties of CsPbI3 by applying strain: A first-principles theoretical study

UV Laser Induced Selective-Area Bandgap Engineering for Fabrication of InGaAsP/InP Laser Devices

The strain regulated physical properties of PbI2/g-C3N4for potential optoelectronic device.

The strain regulated physical properties of PbI2/g-C3N4 for potential optoelectronic device

Uncovering a Vital Band Gap Mechanism of Pnictides

A first-principle study on the band structure of GePb alloys

Transparency of Band-Gap-shifted InGaAsP/lnP Quantum-Well Waveguides

Band Gap and Electronic Properties of Wurtzite-Structure ZnO Co-Doped with IIA and IIIA

Band-Gap Engineering in High-Temperature Boron-Rich Icosahedral Compounds

Bandgap Engineering of InSb by N Incorporation by Metal-Organic Chemical Vapor Deposition

Band Gap Engineering of Binary and Cobalt‐Doped PbS Thin Films Integrated by SILAR Method for Optoelectronic Potentials

Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals

Single Layer Lead Iodide: Computational Exploration of Structural, Electronic and Optical Properties, Strain Induced Band Modulation and the Role of Spin-Orbital-Coupling

Strain-induced Electronic Structures and Band-gap of Few-layer AgInP2S6