Theoretical Prediction of New C–Si Alloys in ${\Boldsymbol{c}}2/{\boldsymbol{m}}$-20 Structure

徐向阳,柴常春,樊庆扬,杨银堂
DOI: https://doi.org/10.1088/1674-1056/26/4/046101
2017-01-01
Chinese Physics B
Abstract:We study structural,mechanical,and electronic properties of C 20 ,Si 20 and their alloys(C 16 Si 4 ,C 12 Si 8 ,C 8 Si 12 ,and C 4 Si 16 ) in C2/m structure by using density functional theory(DFT) based on first-principles calculations.The obtained elastic constants and the phonon spectra reveal mechanical and dynamic stability.The calculated formation enthalpy shows that the C-Si alloys might exist at a specified high temperature scale.The ratio of BIG and Poisson’s ratio indicate that these C-Si alloys in C2/m-20 structure are all brittle.The elastic anisotropic properties derived by bulk modulus and shear modulus show slight anisotropy.In addition,the band structures and density of states are also depicted,which reveal that C 20 ,C 16 Si 4 ,and Si 20 are indirect band gap semiconductors,while C 8 Si 12 and C 4 Si 16 are semi-metallic alloys.Notably,a direct band gap semiconductor(C 12 Si 8 ) is obtained by doping two indirect band gap semiconductors(C 20 and Si 20 ).
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