On-the-spot Growth

Li Lin,Zhongfan Liu

DOI: https://doi.org/10.1038/nmat4498

IF: 41.2

2015-01-01

Nature Materials

Abstract:Large single-crystalline graphene monolayers have been synthesized on a Cu–Ni alloy using a local precursor feeding method with an enhanced growth rate. The fast production of wafer-scale single crystals brings graphene closer to real applications.

What problem does this paper attempt to address?

Surface Monocrystallization of Copper Foil for Fast Growth of Large Single‐Crystal Graphene under Free Molecular Flow

Huan Wang,Xiaozhi Xu,Jiayu Li,Li Lin,Luzhao Sun,Xiao Sun,Shuli Zhao,Congwei Tan,Cheng Chen,Wenhui Dang,Huaying Ren,Jincan Zhang,Bing Deng,Ai Leen Koh,Lei Liao,Ning Kang,Yulin Chen,Hongqi Xu,Feng Ding,Kaihui Liu,Hailin Peng,Zhongfan Liu

DOI: https://doi.org/10.1002/adma.201603579

IF: 29.4

2016-01-01

Advanced Materials

Abstract:Wafer-sized single-crystalline Cu (100) surface can be readily achieved on stacked polycrystalline Cu foils via simple oxygen chemisorption-induced reconstruction, enabling fast growth of large-scale millimeter-sized single-crystalline graphene arrays under molecular flow. The maximum growth rate can reach 300 μm min-1 , several orders of magnitude higher than previously reported values for millimeter-sized single-crystalline graphene growth on Cu foils.
The Way Towards Ultrafast Growth of Single-Crystal Graphene on Copper

Zhihong Zhang,Xiaozhi Xu,Lu Qiu,Shaoxin Wang,Tianwei Wu,Feng Ding,Hailin Peng,Kaihui Liu

DOI: https://doi.org/10.1002/advs.201700087

IF: 15.1

2017-01-01

Advanced Science

Abstract:The exceptional properties of graphene make it a promising candidate in the development of next-generation electronic, optoelectronic, photonic and photovoltaic devices. A holy grail in graphene research is the synthesis of large-sized single-crystal graphene, in which the absence of grain boundaries guarantees its excellent intrinsic properties and high performance in the devices. Nowadays, most attention has been drawn to the suppression of nucleation density by using low feeding gas during the growth process to allow only one nucleus to grow with enough space. However, because the nucleation is a random event and new nuclei are likely to form in the very long growth process, it is difficult to achieve industrial-level wafer-scale or beyond (e.g. 30 cm in diameter) single-crystal graphene. Another possible way to obtain large single-crystal graphene is to realize ultrafast growth, where once a nucleus forms, it grows up so quickly before new nuclei form. Therefore ultrafast growth provides a new direction for the synthesis of large single-crystal graphene, and is also of great significance to realize large-scale production of graphene films (fast growth is more time-efficient and cost-effective), which is likely to accelerate various graphene applications in industry.
Wafer-scale single-crystal monolayer graphene grown on sapphire substrate

Junzhu Li,Mingguang Chen,Abdus Samad,Haocong Dong,Avijeet Ray,Junwei Zhang,Xiaochuan Jiang,Udo Schwingenschlögl,Jari Domke,Cailing Chen,Yu Han,Torsten Fritz,Rodney S. Ruoff,Bo Tian,Xixiang Zhang

DOI: https://doi.org/10.1038/s41563-021-01174-1

IF: 41.2

2022-01-20

Nature Materials

Abstract:The growth of inch-scale high-quality graphene on insulating substrates is desirable for electronic and optoelectronic applications, but remains challenging due to the lack of metal catalysis. Here we demonstrate the wafer-scale synthesis of adlayer-free ultra-flat single-crystal monolayer graphene on sapphire substrates. We converted polycrystalline Cu foil placed on Al2O3(0001) into single-crystal Cu(111) film via annealing, and then achieved epitaxial growth of graphene at the interface between Cu(111) and Al2O3(0001) by multi-cycle plasma etching-assisted–chemical vapour deposition. Immersion in liquid nitrogen followed by rapid heating causes the Cu(111) film to bulge and peel off easily, while the graphene film remains on the sapphire substrate without degradation. Field-effect transistors fabricated on as-grown graphene exhibited good electronic transport properties with high carrier mobilities. This work breaks a bottleneck of synthesizing wafer-scale single-crystal monolayer graphene on insulating substrates and could contribute to next-generation graphene-based nanodevices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter
Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil

Xiaozhi Xu,Zhihong Zhang,Jichen Dong,Ding Yi,Jingjing Niu,Muhong Wu,Li Lin,Rongkang Yin,Mingqiang Li,Jingyuan Zhou,Shaoxin Wang,Junliang Sun,Xiaojie Duan,Peng Gao,Ying Jiang,Xiaosong Wu,Hailin Peng,Rodney S. Ruoff,Zhongfan Liu,Dapeng Yu,Enge Wang,Feng Ding,Kaihui Liu

DOI: https://doi.org/10.1016/j.scib.2017.07.005

IF: 18.9

2017-08-01

Science Bulletin

Abstract:A foundation of the modern technology that uses single-crystal silicon has been the growth of high-quality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-area high-quality (ideally of single-crystal) material will be enabling. Since the first growth on copper foil a decade ago, inch-sized single-crystal graphene has been achieved. We present here the growth, in 20min, of a graphene film of (5×50)cm2 dimension with >99% ultra-highly oriented grains. This growth was achieved by: (1) synthesis of metre-sized single-crystal Cu(111) foil as substrate; (2) epitaxial growth of graphene islands on the Cu(111) surface; (3) seamless merging of such graphene islands into a graphene film with high single crystallinity and (4) the ultrafast growth of graphene film. These achievements were realized by a temperature-gradient-driven annealing technique to produce single-crystal Cu(111) from industrial polycrystalline Cu foil and the marvellous effects of a continuous oxygen supply from an adjacent oxide. The as-synthesized graphene film, with very few misoriented grains (if any), has a mobility up to ∼23,000cm2V-1s-1 at 4K and room temperature sheet resistance of ∼230Ω/□. It is very likely that this approach can be scaled up to achieve exceptionally large and high-quality graphene films with single crystallinity, and thus realize various industrial-level applications at a low cost.

multidisciplinary sciences
Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Libo Gao,Hai Xu,Linjun Li,Yang Yang,Qiang Fu,Xinhe Bao,Kian Ping Loh

DOI: https://doi.org/10.1088/2053-1583/3/2/021001

IF: 6.861

2016-01-01

2D Materials

Abstract:The chemical vapor deposition (CVD) of graphene on Cu has attracted much attention because of its industrial scalability. Herein, we report inductively coupled plasma-assisted CVD of epitaxially grown graphene on (111)-textured Cu film alloyed with a small amount of Ni, where large area high quality graphene film can be grown in less than 5 min at 800 degrees C, thus affording industrial scalability. The epitaxially grown graphene films on (111)-textured Cu contain grains which are predominantly aligned with the Cu lattice and about 10% of 30 degrees-rotated grains (anti-grains). Such graphene films are exclusively monolayer and possess good electrical conductivity, high carrier mobility, and room temperature quantum Hall effect. Magnetoresistance measurements reveal that the reduction of the grain sizes from 150 nmto 50 nm produce increasing Anderson localization and the appearance of a transport gap. Owing to the presence of grain boundaries in these anti-grains, epitaxially grown graphene films possess n-type characteristics and exhibit ultra-high sensitivity to adsorbates.
Surface Engineering of Copper Foils for Growing Centimeter-Sized Single-Crystalline Graphene.

Li Lin,Jiayu Li,Huaying Ren,Ai Leen Koh,Ning Kang,Hailin Peng,H. Q. Xu,Zhongfan Liu

DOI: https://doi.org/10.1021/acsnano.6b00041

IF: 17.1

2016-01-01

ACS Nano

Abstract:The controlled growth of high-quality graphene on a large scale is of central importance for applications in electronics and optoelectronics. To minimize the adverse impacts of grain boundaries in large-area polycrystalline graphene, the synthesis of large single crystals of monolayer graphene is one of the key challenges for graphene production. Here, we develop a facile surface-engineering method to grow large single-crystalline monolayer graphene by the passivation of the active sites and the control of graphene nucleation on copper surface using the melamine pretreatment. Centimeter-sized hexagonal single-crystal graphene domains were successfully grown, which exhibit ultrahigh carrier mobilities exceeding 25,000 cm(2) V(-1) s(-1) and quantum Hall effects on SiO2 substrates. The underlying mechanism of melamine pretreatments were systematically investigated through elemental analyses of copper surface in the growth process of large single-crystals. This present work provides a surface design of a catalytic substrate for the controlled growth of large-area graphene single crystals.
One Second Formation of Large Area Graphene on a Conical Tip Surface via Direct Transformation of Surface Carbide

Yifei Ge,Lele Xu,Xing Lu,Jianxun Xu,Jianbo Liang,Yuliang Zhao

DOI: https://doi.org/10.1002/smll.201801288

IF: 13.3

2018-06-25

Small

Abstract:Graphene functionalized nanotips are expected to possess promising potential for various applications based on the outstanding electrical and mechanical properties of graphene. However, current methods, usually requiring a high growth temperature and identical crystal surface to match graphene lattice, are suitable for graphene formation on a flat surface. It remains a big challenge to grow graphene on a nanosized convex surface and fabricate functionalized nanotips with high quality graphene at the apex. In this work, a novel ultrafast annealing method is developed for growing large area graphene on Ni nanotips within 1-2 s. Few layered or multiple layered graphene is presented on the apex or sidewall of the conical tip surface. Direct experimental evidences support that thus-produced graphene is formed via the direct conversion of nickel carbide at the outer surface under the instantaneous high temperature, which is different from the conventional segregation mechanism. This newly developed ultrafast method provides a new route to produce graphene efficiently and economically, promising for both convex surfaces and flat substrates. Moreover, the graphene functionalized nanotips exhibit a great potential for nanoelectrical measurements and conductive scanning probe microscopy (SPM) applications.
One-Step, Catalyst-Free, Scalable in Situ Synthesis of Single-Crystal Aluminum Nanowires in Confined Graphene Space

Yanan Chen,Yanbin Wang,Shuze Zhu,Chaoji Chen,Valencia A. Danner,Yiju Li,Jiaqi Dai,Hongbian Li,Kun Kevin Fu,Teng Li,Yang Liu,Liangbing Hu

DOI: https://doi.org/10.1021/acsami.8b18977

IF: 9.5

2019-01-01

ACS Applied Materials & Interfaces

Abstract:Nanowires have a wide range of applications, such as transparent electrodes, Li-ion battery anodes, light-emitting diodes, solar cells, and electronic devices. Currently, aluminum (Al) nanowires can be synthesized by thermally induced substitution of germanium (Ge) nanowires, chemical vapor deposition on other metal substrates, and template-assisted growth methods. However, there are still challenges in fabricating extremely high-purity nanowires, large-scale manufacturing, and simplifying the synthesis process and conditions. Here, we report for the first time that single-crystal Al nanowires can be one-step, in situ synthesized on a reduced graphene oxide (RGO) substrate on a large scale without using any catalysts. Through a simple high temperature treatment process, commercial micro-sized Al powders in RGO film were transformed into a single-crystal Al nanowire with an average length of 1.2 μm and an average diameter of 18 nm. The possible formation mechanism of the single-crystal Al nanowires is proposed as follows: hot aluminum atoms eject from the pristine aluminum/alumina core/shell structure of Al powders when they build up enough energy from the thermal stress under high temperature and confined space conditions, which is supported by both experimental and computational results. The method introduced here can be extended to allow the synthesis of one-dimensional highly reactive materials, like alkali metal nanowires, in confined spaces.
Scalable and ultrafast epitaxial growth of single-crystal graphene wafers for electrically tunable liquid-crystal microlens arrays

Bing Deng,Zhaowei Xin,Ruiwen Xue,Shishu Zhang,Xiaozhi Xu,Jing Gao,Jilin Tang,Yue Qi,Yani Wang,Yan Zhao,Luzhao Sun,Huihui Wang,Kaihui Liu,Mark H Rummeli,Lu-Tao Weng,Zhengtang Luo,Lianming Tong,Xinyu Zhang,Changsheng Xie,Zhongfan Liu,Hailin Peng

DOI: https://doi.org/10.1016/j.scib.2019.04.030

2019-05-30

Abstract:The scalable growth of wafer-sized single-crystal graphene in an energy-efficient manner and compatible with wafer process is critical for the killer applications of graphene in high-performance electronics and optoelectronics. Here, ultrafast epitaxial growth of single-crystal graphene wafers is realized on single-crystal Cu90Ni10(1 1 1) thin films fabricated by a tailored two-step magnetron sputtering and recrystallization process. The minor nickel (Ni) content greatly enhances the catalytic activity of Cu, rendering the growth of a 4 in. single-crystal monolayer graphene wafer in 10 min on Cu90Ni10(1 1 1), 50 folds faster than graphene growth on Cu(1 1 1). Through the carbon isotope labeling experiments, graphene growth on Cu90Ni10(1 1 1) is proved to be exclusively surface-reaction dominated, which is ascribed to the Cu surface enrichment in the CuNi alloy, as indicated by element in-depth profile. One of the best benefits of our protocol is the compatibility with wafer process and excellent scalability. A pilot-scale chemical vapor deposition (CVD) system is designed and built for the mass production of single-crystal graphene wafers, with productivity of 25 pieces in one process cycle. Furthermore, we demonstrate the application of single-crystal graphene in electrically controlled liquid-crystal microlens arrays (LCMLA), which exhibit highly tunable focal lengths near 2 mm under small driving voltages. By integration of the graphene based LCMLA and a CMOS sensor, a prototype camera is proposed that is available for simultaneous light-field and light intensity imaging. The single-crystal graphene wafers could hold great promising for high-performance electronics and optoelectronics that are compatible with wafer process.
Preparation and multilayer transfer of high-quality monocrystalline graphene grown on centimeter-Cu (111) substrate

Xing Guo,Xue Zhang,Peng Wang,Li Sun,Yanlu Li,Fapeng Yu,Xian Zhao

DOI: https://doi.org/10.1016/j.vacuum.2023.111855

IF: 4

2023-01-20

Vacuum

Abstract:Graphene, owing to its excellent mechanical properties, shows promising application prospects in the field of pressure sensing. Currently, chemical vapor deposition (CVD) is an effective method to synthesize graphene artificially. It is challenging to grow large monocrystals by single-point nucleation. However, meeting multiple requirements (e.g., monocrystal and monolayer) is difficult when graphene is grown by multipoint nucleation, which critically limits their practical applications. In this study, we report the growth of monocrystal and monolayer graphene on a centimeter-scale Cu (111) substrate using CVD. Multiphysics coupling establishes the guidance results of gradient and constant temperature fields, obtains a high-purity Cu (111) substrate in a gradient temperature field, and grows monolayer graphene in a constant temperature field. Experiments show that choosing the optimum time during the temperature drop of the monocrystal substrate can cause total area coverage of Cu foil transfer toward Cu (111). The concentration gradient grew larger monocrystals of graphene with the Young's modulus of 0.837 TPa on the Cu (111) substrate following multipoint nucleation. Furthermore, multilayer graphene with good uniformity was synthesized.

materials science, multidisciplinary,physics, applied
Recent Advances in Growth of Large‐Sized 2D Single Crystals on Cu Substrates

Yixuan Fan,Lin Li,Gui Yu,Dechao Geng,Xiaotao Zhang,Wenping Hu

DOI: https://doi.org/10.1002/adma.202003956

IF: 29.4

2020-11-16

Advanced Materials

Abstract:Large‐scale and high‐quality 2D materials have been an emerging and promising choice for use in modern chemistry and physics owing to their fascinating property profile. The past few years have witnessed inspiringly progressing development in controlled fabrication of large‐sized and single‐crystal 2D materials. Among those production methods, chemical vapor deposition (CVD) has drawn the most attention because of its fine control over size and quality of 2D materials by modulating the growth conditions. Meanwhile, Cu has been widely accepted as the most popular catalyst due to its significant merit in growing monolayer 2D materials in the CVD process. Herein, very recent advances in preparing large‐sized 2D single crystals on Cu substrates by CVD are presented. First, the unique features of Cu will be given in terms of ultralow precursor solubility and feasible surface engineering. Then, scaled growth of graphene and hexagonal boron nitride (h‐BN) crystals on Cu substrates is demonstrated, wherein different kinds of Cu surfaces have been employed. Furthermore, the growth mechanism for the growth of 2D single crystals is exhibited, offering a guideline to elucidate the in‐depth growth dynamics and kinetics. Finally, relevant issues for industrial‐scale mass production of 2D single crystals are discussed and a promising future is expected.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Single-atom catalytic growth of crystals using graphene as a case study

Xiaoqin Yang,Yu Liu,Huy Q. Ta,Ehsan Rezvani,Yue Zhang,Mengqi Zeng,Lei Fu,Alicja Bachmatiuk,Jinping Luo,Lijun Liu,Mark H. Rümmeli

DOI: https://doi.org/10.1038/s41699-021-00267-4

IF: 10.516

2021-12-01

npj 2D Materials and Applications

Abstract:Abstract Anchored Single-atom catalysts have emerged as a cutting-edge research field holding tremendous appeal for applications in the fields of chemicals, energy and the environment. However, single-atom-catalysts for crystal growth is a nascent field. Of the few studies available, all of them are based on state-of-the-art in situ microscopy investigations and computational studies, and they all look at the growth of monolayer graphene from a single-atom catalyst. Despite the limited number of studies, they do, collectively, represent a new sub-field of single-atom catalysis, namely single-atom catalytic growth of crystalline solids. In this review, we examine them on substrate-supported and as freestanding graphene fabrication, as well as rolled-up graphene, viz ., single-walled carbon nanotubes (SWCNT), grown from a single atom. We also briefly discuss the catalytic etching of graphene and SWCNT’s and conclude by outlining the future directions we envision this nascent field to take.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Uniform Single-Layer Graphene Growth on Recyclable Tungsten Foils

Zhiyu Zou,Xiuju Song,Ke Chen,Qingqing Ji,Yanfeng Zhang,Zhongfan Liu

DOI: https://doi.org/10.1007/s12274-015-0727-9

2015-01-01

Abstract:To meet the rising demand of graphene in electronics and optoelectronics, developing an efficient synthesis strategy for effective control of the layer thickness is highly necessary. Herein, we report the synthesis of strictly single-layer graphene on the foil of an early transition metal, tungsten (W), via a simple chemical vapor deposition route. The cracking of hydrocarbons is facilitated by the catalytically active metal surface of W, while the subsequent two-dimensional growth is mediated by the carbide-forming ability within the underlying bulk, leading to the formation of uniform monolayer graphene. The as-grown graphene layers can be transferred onto target substrates rapidly through the recently developed electrochemical method, which also allows for reuse of the substrates at least five times without introducing quality deterioration. Moreover, considering the refractory nature of W foils, a complementary component of nickel is added, by means of which the growth temperature of graphene can be significantly reduced. In brief, a highly-efficient and low-cost synthesis route has been developed for the growth of graphene towards large-area uniformity, single-layer thickness and high crystalline quality.
Liquid Cu-Zn Catalyzed Growth of Graphene Single-crystals

Lin Li,Minghui Li,ruijie Zhang,Qing Zhang,Hang Li,Dechao Geng

DOI: https://doi.org/10.1039/d3nj03345g

IF: 3.3

2023-10-27

New Journal of Chemistry

Abstract:Chemical vapor deposition (CVD) method has been widely used for growing large-scale graphene film on metal substrate. Due to drawbacks of single metal substrates, alloy substrates have gradually attracted attention owing to the exceptional characteristics derived from different metals, making them an enticing choice. In this study, a novel liquid Cu-Zn alloy catalyst was introduced for the first time in the preparation of millimeter-sized, single-crystal monolayer graphene using the CVD approach. Notably, the graphene synthesized on the liquid Cu-Zn alloy catalyst exhibited distinct advantages in terms of size compared to graphene grown on the conventional liquid Cu catalyst. The introduction of Zn onto the liquid Cu surface effectively impedes the nucleation density of graphene on the alloy substrate, also resulting in increased graphene size. The uniformity of large-sized graphene's electrical properties was confirmed by 2D resistivity measurement and tests on field effect transistor (FET) devices. This work put forward to inspire the novel design of alloy catalysts and the synthesis of graphene film bearing desirable properties.

chemistry, multidisciplinary
Ultrafast growth of single-crystal graphene assisted by a continuous oxygen supply

Xiaozhi Xu,Zhihong Zhang,Lu Qiu,Jianing Zhuang,Liang Zhang,Huan Wang,Chongnan Liao,Huading Song,Ruixi Qiao,Peng Gao,Zonghai Hu,Lei Liao,Zhimin Liao,Dapeng Yu,Enge Wang,Feng Ding,Hailin Peng,Kaihui Liu

DOI: https://doi.org/10.1038/nnano.2016.132

IF: 38.3

2016-01-01

Nature Nanotechnology

Abstract:Single-crystal graphene can be grown on a copper foil at a rate of 60 μm s -1 by using an adjacent oxide substrate that continuously supplies oxygen to the surface of the copper catalyst.
Silane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride

Shujie Tang,Haomin Wang,Hui Shan Wang,Qiujuan Sun,Xiuyun Zhang,Chunxiao Cong,Hong Xie,Xiaoyu Liu,Xiaohao Zhou,Fuqiang Huang,Xiaoshuang Chen,Ting Yu,Feng Ding,Xiaoming Xie,Mianheng Jiang

DOI: https://doi.org/10.1038/ncomms7499

2015-03-10

Abstract:The direct growth of high-quality, large single-crystalline domains of graphene on a dielectric substrate is of vital importance for applications in electronics and optoelectronics. Traditionally, graphene domains grown on dielectrics are typically only ~1 nm with a growth rate of ~1 nm/min or less, the main reason is the lack of a catalyst. Here we show that silane, serving as a gaseous catalyst, is able to boost the graphene growth rate to ~1 um/min, thereby promoting graphene domains up to 20 um in size to be synthesized via chemical vapor deposition on hexagonal boron nitride. Hall measurements show that the mobility of the sample reaches 20,000 cm2/Vs at room temperature, which is among the best for CVD-grown graphene. Combining the advantages of both catalytic CVD and the ultra-flat dielectric substrate, gaseous catalyst-assisted CVD paves the way for synthesizing high-quality graphene for device applications while avoiding the transfer process.

Materials Science
Fast growth of centimeter-scale single-crystal copper foils with high-index planes by the edge-incision effect

Li Li,Teng Ma,Wei Yu,Menglong Zhu,Jing Li,Zhi Chen,Haohan Li,Meng Zhao,Jinghua Teng,Bingbing Tian,Chenliang Su,Kian Ping Loh

DOI: https://doi.org/10.1088/2053-1583/abf54c

IF: 6.861

2021-04-26

2D Materials

Abstract:Abstract Single-crystal copper substrates have gained importance for the preparation of high-quality graphene and hexagonal boron nitride monolayer films by chemical vapor deposition (CVD). Especially, large-scale single-crystal copper foils with high-index planes are synthesized recently and attract great interests. However, the current synthesis methods of single-crystal copper foils and films are energy and time-consuming. Here, we show a rapid and efficient approach for the preparation of centimeter-scale single-crystal copper foils by making small incisions at the edges of polycrystalline copper foils before high-temperature annealing. 1.5 cm × 4 cm pieces of grain-boundary-free copper foils can be prepared by annealing at 1080 °C for 60 min. The annealed copper foil manifests a single high-index plane and is grain-boundary-free over the whole area. We also show that CVD of graphene on the high-index single-crystal copper affords a higher growth rate than on low-index copper substrates.

materials science, multidisciplinary
High Quality, Transferable Graphene Grown on Single Crystal Cu(111) Thin Films on Basal-Plane Sapphire

Kongara M. Reddy,Andrew D. Gledhill,Chun-Hu Chen,Julie M. Drexler,Nitin P. Padture

DOI: https://doi.org/10.1063/1.3569143

2011-03-18

Abstract:The current method of growing large-area graphene on Cu surfaces (polycrystalline foils and thin films) and its transfer to arbitrary substrates is technologically attractive. However, the quality of graphene can be improved significantly by growing it on single-crystal Cu surfaces. Here we show that high quality, large-area graphene can be grown on epitaxial single-crystal Cu(111) thin films on reusable basal-plane sapphire (alpha-Al2O3(0001)) substrates and then transferred to another substrate. While enabling graphene growth on Cu single-crystal surfaces, this method has the potential to avoid the high cost and extensive damage to graphene associated with sacrificing bulk single-crystal Cu during graphene transfer.

Materials Science
Epitaxial Growth of 6 In. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C Via Chemical Vapor Deposition

Xuefu Zhang,Tianru Wu,Qi Jiang,Huishan Wang,Hailong Zhu,Zhiying Chen,Ren Jiang,Tianchao Niu,Zhuojun Li,Youwei Zhang,Zhijun Qiu,Guanghui Yu,Ang Li,Shan Qiao,Haomin Wang,Qingkai Yu,Xiaoming Xie

DOI: https://doi.org/10.1002/smll.201805395

IF: 13.3

2019-01-01

Small

Abstract:The future electronic application of graphene highly relies on the production of large-area high-quality single-crystal graphene. However, the growth of single-crystal graphene on different substrates via either single nucleation or seamless stitching is carried out at a temperature of 1000 degrees C or higher. The usage of this high temperature generates a variety of problems, including complexity of operation, higher contamination, metal evaporation, and wrinkles owing to the mismatch of thermal expansion coefficients between the substrate and graphene. Here, a new approach for the fabrication of ultraflat single-crystal graphene using Cu/Ni (111)/sapphire wafers at lower temperature is reported. It is found that the temperature of epitaxial growth of graphene using Cu/Ni (111) can be reduced to 750 degrees C, much lower than that of earlier reports on catalytic surfaces. Devices made of graphene grown at 750 degrees C have a carrier mobility up to approximate to 9700 cm(2) V-1 s(-1) at room temperature. This work shines light on a way toward a much lower temperature growth of high-quality graphene in single crystallinity, which could benefit future electronic applications.
Visualizing Fast Growth of Large Single-Crystalline Graphene by Tunable Isotopic Carbon Source

Luzhao Sun,Li Lin,Jincan Zhang,Huan Wang,Hailin Peng,Zhongfan Liu

DOI: https://doi.org/10.1007/s12274-016-1297-1

IF: 9.9

2016-01-01

Nano Research

Abstract:The fast growth of large single-crystalline graphene by chemical vapor deposition on Cu foil remains a challenge for industrial-scale applications. To achieve the fast growth of large single-crystalline graphene, understanding the detailed dynamics governing the entire growth process—including nucleation, growth, and coalescence—is important; however, these remain unexplored. In this study, by using a pulsed carbon isotope labeling technique in conjunction with micro-Raman spectroscopy identification, we visualized the growth dynamics, such as nucleation, growth, and coalescence, during the fast growth of large single-crystalline graphene domains. By tuning the supply of the carbon source, a growth rate of 320 μm/min and the growth of centimeter-sized graphene single crystals were achieved on Cu foil.

On-the-spot Growth

Surface Monocrystallization of Copper Foil for Fast Growth of Large Single‐Crystal Graphene under Free Molecular Flow

The Way Towards Ultrafast Growth of Single-Crystal Graphene on Copper

Wafer-scale single-crystal monolayer graphene grown on sapphire substrate

Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Surface Engineering of Copper Foils for Growing Centimeter-Sized Single-Crystalline Graphene.

One Second Formation of Large Area Graphene on a Conical Tip Surface via Direct Transformation of Surface Carbide

One-Step, Catalyst-Free, Scalable in Situ Synthesis of Single-Crystal Aluminum Nanowires in Confined Graphene Space

Scalable and ultrafast epitaxial growth of single-crystal graphene wafers for electrically tunable liquid-crystal microlens arrays

Preparation and multilayer transfer of high-quality monocrystalline graphene grown on centimeter-Cu (111) substrate

Recent Advances in Growth of Large‐Sized 2D Single Crystals on Cu Substrates

Single-atom catalytic growth of crystals using graphene as a case study

Uniform Single-Layer Graphene Growth on Recyclable Tungsten Foils

Liquid Cu-Zn Catalyzed Growth of Graphene Single-crystals

Ultrafast growth of single-crystal graphene assisted by a continuous oxygen supply

Silane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride

Fast growth of centimeter-scale single-crystal copper foils with high-index planes by the edge-incision effect

High Quality, Transferable Graphene Grown on Single Crystal Cu(111) Thin Films on Basal-Plane Sapphire

Epitaxial Growth of 6 In. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C Via Chemical Vapor Deposition

Visualizing Fast Growth of Large Single-Crystalline Graphene by Tunable Isotopic Carbon Source