InP Single Nanowire Solar Cells

Z. Q. Zhong,Z.Y. Li,L. Fu,Q. Gao,Z. Li,K. Peng,L. Li,G. J. Zhang,Z. M. Wang,H. H. Tan,C. Jagadish

DOI: https://doi.org/10.1364/pv.2015.ptu3b.3

2015-01-01

Abstract:We demonstrated single axial p-i-n junction InP nanowire (NW) solar cells. The photovoltaic behavior of the devices has been investigated by optical and electrical characterization and simulation techniques.

What problem does this paper attempt to address?

Hybrid heterojunction and photoelectrochemistry solar cell based on silicon nanowires and double-walled carbon nanotubes.

Qinke Shu,Jinquan Wei,Kunlin Wang,Hongwei Zhu,Zhen Li,Yi Jia,Xuchun Gui,Ning Guo,Xinming Li,Chaoran Ma,Dehai Wu

DOI: https://doi.org/10.1021/nl902581k

IF: 10.8

2009-01-01

Nano Letters

Abstract:A hybrid solar cell model composed of a heterojunction cell and a photoelectrochemical (PEC) cell has been proposed and characterized. In the hybrid cell, a thin film of double-walled carbon nanotubes forms a heterojunction with the silicon nanowire (SiNW) array and also functions as the transparent counter electrode of the PEC cell. The cell performance can be readily tuned by controlling the SiNW density. Under AM 1.5G illumination, a power conversion efficiency of 1.29%, higher than those reported for SiNW array-based PEC cells, has been obtained.
Efficiency Enhancement of Axial Junction InP Single Nanowire Solar Cells by Dielectric Coating

Zhiqin Zhong,Ziyuan Li,Qian Gao,Zhe Li,Kun Peng,Li,Sudha Mokkapati,Kaushal Vora,Jiang Wu,Guojun Zhang,Zhiming Wang,Lan Fu,Hark Hoe Tan,Chennupati Jagadish

DOI: https://doi.org/10.1016/j.nanoen.2016.08.032

IF: 17.6

2016-01-01

Nano Energy

Abstract:In this work we demonstrate single axial p-i-n junction InP nanowire (NW) solar cells grown by selective-area metal organic vapor phase epitaxy (SA-MOVPE) technique. A power conversion efficiency of up to 6.5% was realized in the single NW solar cell (horizontally lying on substrate) without any surface passivation. Electron beam induced current (EBIC) and photocurrent mapping were performed to investigate the electrical properties of the NW solar cells and their influence on device performance, which are essential for an in-depth understanding of the design requirements for NW solar cells. A further conformal SiNx layer was deposited on the single NW solar cell devices by plasma-enhanced chemical vapor deposition (PECVD). Overall efficiency improvement has been obtained in the SiNx-coated devices with a remarkable up to 62% increase to a peak efficiency of 10.5%, which to our knowledge is the highest efficiency reported for horizontal single NW solar cells. This has been attributed to an enhanced optical antenna effect and effective surface passivation due to SiNx coating, as respectively confirmed by numerical simulation and time-resolved photoluminescence (TRPL) measurements. Our work demonstrates that dielectric coating is a promising simple approach to achieve high performance III–V NW solar cells.
Reducing Zn diffusion in single axial junction InP nanowire solar cells for improved performance

Ziyuan Li,Inseok Yang,Li Li,Q. Gao,Jet Shoon Chong,Zhe Li,Mark N. Lockrey,Hark Hoe Tan,Chennupati Jagadish,Lan Fu

DOI: https://doi.org/10.1016/j.pnsc.2018.01.014

2018-01-01

Abstract:In this work axial n-i-p junction InP nanowires were grown by selective-area metal organic vapor phase epitaxy (SA-MOVPE) technique with the growth sequence starting from n-segment. The optical properties and carrier lifetimes of the n-, i- and p-type segments were studied and compared using time-resolved photoluminescence (PL) and cathodoluminescence (CL) measurements. We demonstrate for the first time that CL is capable of resolving the electrical profile of the nanowires, namely the varied lengths of the n-, i- and p-segments, providing a simple and effective approach for nanowire growth calibration and optimization. The CL result was further confirmed by electron beam induced current (EBIC) and photocurrent mapping measurements performed from the fabricated single nanowire solar cell devices. It is revealed that despite a non-optimized device structure (very long n-region and short i-region), the n-i-p nanowire solar cells show improved power conversion efficiency (PCE) than the previously reported p-i-n (growth starts with p-segment) single nanowire solar cells due to reduced p-type dopant (Zn) diffusion during the growth of n-i-p solar cell structure.
Study of A Single Coaxial Silicon Nanowire for On-Chip Integrated Photovoltaic Application

Oka Kurniawan,Er Ping Li

2009-01-01

Abstract:Nanowires have been identified as a promising alternative for future electronics. A single coaxial nanowire photovoltaic device has been fabricated to power up nanoelectronic sensors and logic gates. The current work calculates and analyses the performance of the coaxial silicon nanowire using a semi-classical method. The current-voltage characteristics are calculated for both under dark and AM1.5G illumination. Some interesting phenomena is observed from the two-dimensional plot of the potential. Furthermore, the effect of the surface recombination, which is significant in nanoscale devices, is also studied.
Photovoltaic measurements in carbon nanotube - Amorphous silicon core/shell nanowire

Zhou Hang,Lentaris Georgis,Hiralal Pritesh,Butler Tim,Unalan Emrah,Amaratunga Gehan,Colli Alan

DOI: https://doi.org/10.1109/PVSC.2012.6317976

2012-01-01

Abstract:Carbon nanotube is one of the promising materials for exploring new concepts in solar energy conversion and photon detection. Here, we report the first experimental realization of a single core/shell nanowire photovoltaic device (2-4μm) based on carbon nanotube and amorphous silicon. Specifically, a multi-walled carbon nanotube (MWNTs) was utilized as the metallic core, on which n-type and intrinsic amorphous silicon layers were coated. A Schottky junction was formed by sputtering a transparent conducting indium-tin-oxide layer to wrap the outer shell of the device. The single coaxial nanowire device showed typical diode ratifying properties with turn-on voltage around 1V and a rectification ratio of 104 when biased at ±2V. Under illumination, it gave an open circuit voltage of ∼0.26V. Our study has shown a simple and useful platform for gaining insight into nanowire charge transport and collection properties. Fundamental studies of such nanowire device are important for improving the efficiency of future nanowire solar cells or photo detectors. © 2012 IEEE.
Vertically aligned ZnCdS nanowire arrays/P3HT heterojunctions for solar cell applications

Dong Jin Lee,G Mohan Kumar,P Ilanchezhiyan,Jae-Chul Lee,Sung Ryong Ryu,Tae Won Kang

DOI: https://doi.org/10.1016/j.jcis.2016.10.006

2017-02-01

Abstract:Nowadays, solid-state inorganic-organic hybrid solar cells based on one-dimensional (1D) inorganic semiconducting nanostructures and organic polymers are believed to offer convincing solutions for the realm of next generation solar cells. In this regard, 1D ZnCdS nanowire (NW) arrays were fabricated on transparent conducting substrates through a catalyst free co-evaporation method and their wurtzite structural characteristics, 1D morphological layout and valence state/composition were studied in detail using X-ray diffraction, high-resolution electron microscopy and X-ray photoelectron spectroscopy, respectively. The existence of deep level traps and optical band gap of ZnCdS NWs were additionally studied using room-temperature cathodoluminescence and UV-vis absorbance measurements. The inorganic-organic hybrid cells were then fabricated using these NWs via spin coating poly(3,4-ethylenedioxythiophene) and poly(styrene sulfonate) based polymers. The morphological dissemination of the polymer deposits on NWs were also studied individually by electron microscopy. The solar cell (J-V) characteristics of the fabricated architectures were investigated at room-temperature and as a function of temperature and different intensities of incident light irradiation. The trap energy of the devices was noted to decrease from 68.1 to 40.7eV, suggesting the active role of trap sites that could have originated from the surface defects and other structural disorders across the hybrid heterostructures.
Inp Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

Jesper Wallentin,Nicklas Anttu,Damir Asoli,Maria Huffman,Ingvar Aberg,Martin H. Magnusson,Gerald Siefer,Peter Fuss-Kailuweit,Frank Dimroth,Bernd Witzigmann,H. Q. Xu,Lars Samuelson,Knut Deppert,Magnus T. Borgstrom

DOI: https://doi.org/10.1126/science.1230969

IF: 56.9

2013-01-01

Science

Abstract:Photovoltaics based on nanowire arrays could reduce cost and materials consumption compared with planar devices but have exhibited low efficiency of light absorption and carrier collection. We fabricated a variety of millimeter-sized arrays of p-type/intrinsic/n-type (p-i-n) doped InP nanowires and found that the nanowire diameter and the length of the top n-segment were critical for cell performance. Efficiencies up to 13.8% (comparable to the record planar InP cell) were achieved by using resonant light trapping in 180-nanometer-diameter nanowires that only covered 12% of the surface. The share of sunlight converted into photocurrent (71%) was six times the limit in a simple ray optics description. Furthermore, the highest open-circuit voltage of 0.906 volt exceeds that of its planar counterpart, despite about 30 times higher surface-to-volume ratio of the nanowire cell.
A Cathodoluminescence study of InP/InGaP axially heterostructured NWs for tandem solar cells

Irene Mediavilla,Julian Anaya,Beatriz Galiana,Lukas Hrachowina,Magnus T Borgström,Juan Jimenez

DOI: https://doi.org/10.1088/1361-6528/ad263d

IF: 3.5

2024-02-06

Nanotechnology

Abstract:Axially heterostructured nanowires (NWs) constitute a promising platform for advanced electronic and optoelectronic nanodevices. The presence of different materials in these NWs introduces a mismatch resulting in complex strain distributions susceptible of changing the band gap and carrier mobility. The growth of these NWs presents challenges related to the reservoir effect in the catalysts droplet that affect to the junction abruptness, and the occurrence of undesired lateral growth creating core-shell heterostructures that introduce additional strain. We present herein a cathodoluminescence (CL) analysis on axially heterostructured InP/InGaP NWs with tandem solar cell structure. The CL is complemented with micro Raman, micro photoluminescence (PL), and high resolution transmission electron microscopy (HRTEM) measurements. The results reveal the zinc blende (ZB) structure of the NWs, the presence of a thin InGaP shell around the InP bottom cell, along with its associated strain, and the doping distribution.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Heterojunction Photovoltaic Devices Utilizing Single Wall Carbon Nanotube Thin Films and Silicon Substrates

Hang Zhou,Husnu Emrah Unalan,Pritesh Hiralal,Alan Colli,Swee Ching Tan,Lin Wang,Fei Kong,Gehan Amaratunga

DOI: https://doi.org/10.1109/pvsc.2008.4922871

2008-01-01

Abstract:In this work, we demonstrate heterojunction photovoltaic devices utilizing transparent and conducting single wall carbon nanotube (SWNT) thin films as the p-layer on n-type crystalline silicon substrate. The best device shows a short circuit current of 2.74 mA/cm2 with an open circuit voltage of 0.4V (AM 1.5). In addition, the concept of applying SWNT film to a thin-film amorphous Si solar cell is also demonstrated. SWNT thin films can be applied via simple solution based methods. SWNT/Si heterojunction devices have remained stable under laboratory conditions for months so far.
P-Cu 2O/n-ZnO nanowires on ITO glass for solar cells

Jin Zhang,Wenxiu Que,Peng Zhong,Gangqiang Zhu

DOI: https://doi.org/10.1166/jnn.2010.2875

2010-01-01

Journal of Nanoscience and Nanotechnology

Abstract:In this paper, the fabrication and characterization of a heterojunction solar cell based on p-Cu2O/n-ZnO nanowires on ITO glass are presented. ZnO aligned nanocrystal seed layer is firstly prepared by RF magnetron sputtering technique, and then vertical ZnO nanowire arrays with an acicular crystal structure are obtained by using a chemical bath deposition processing. The results indicate that the ZnO nanowires with a diameter of about 50 nm and 500 nm in length can be easily obtained. The absorption and transmittance of the ZnO nanowires are studied. It is also noted that the Cu2O can fill well into the space between ZnO nanowires by an electrodeposition process. Furthermore, the effect of the Cu2O orientation on the cell performance is also presented.
Single ZnO nanowire/p-type GaN heterojunctions for photovoltaic devices and UV light-emitting diodes.

Ya-Qing Bie,Zhi-Min Liao,Peng-Wei Wang,Yang-Bo Zhou,Xiao-Bing Han,Yu Ye,Qing Zhao,Xiao-Song Wu,Lun Dai,Jun Xu,Li-Wen Sang,Jun-Jing Deng,K Laurent,Y Leprince-Wang,Da-Peng Yu

DOI: https://doi.org/10.1002/adma.201000985

IF: 29.4

2010-01-01

Advanced Materials

Abstract:We fabricate heterojunctions consisting of a single n-type ZnO nanowire and a p-type GaN film. The photovoltaic effect of heterojunctions exhibits open-circuit voltages ranging from 2 to 2.7 V, and a maximum output power reaching 80 nW. Light-emitting diodes with UV electroluminescence based on the heterojunctions are demonstrated.
CuInSe2 nanowires from facile chemical transformation of In2Se3 and their integration in single-nanowire devices.

David T Schoen,Hailin Peng,Yi Cui

DOI: https://doi.org/10.1021/nn3058533

IF: 17.1

2013-01-01

ACS Nano

Abstract:Nanowire solar cells are receiving a significant amount of attention for their potential to improve light absorption and charge collection in photovoltaics. Single-nanowire solar cells offer the ability to investigate performance limits for macroscale devices, as well as the opportunity for in-depth structural characterization and property measurement in small working devices. Copper indium selenide (CIS) is a material uniquely suited to these investigations. Not only could nanowire solar cells of CIS perhaps allow efficient macroscale photovoltaics to be fabricated while reducing the amount of CIS required, important for a system with possible resource limitations, but it is also a photovoltaic material for which fundamental understanding has been elusive. We here present a recipe for a scaled up vapor liquid solid based synthesis of CIS nanowires, in-depth material and property correlation of single crystalline CIS nanowires, and the first report of a single CIS nanowire solar cell. The synthesis was accomplished by annealing copper-coated In2Se3 nanowires at a moderate temperature of 350 °C, leading to solid-state reaction forming CIS nanowires. These nanowires are p-type with a resitivity of 6.5 Ωcm. Evidence is observed for a strong diameter dependence on the nanowire transport properties. The single-nanowire solar cells have an open-circuit voltage of 500 mV and a short-circuit current of 2 pA under AM 1.5 illumination.
High-efficiency InP-based Multijunction Solar Cells

Y Gu,J Yan,M Raj,FS Choa,GV Jagannathan,S Trivedi,J Feng

DOI: https://doi.org/10.1117/12.543329

2003-01-01

Abstract:In this work, we study a high efficient four-junction solar cells using AlAsSb(1.91eV), AlInAs(1.46eV), ALGaInAs(1.0eV) and InGaAs(0.75eV) materials. The >35% efficiency is calculated under AM0, and the thickness of each layer is adjusted to equalize the short circuit current. We also experimentally fabricated a 1.0eV cell and studied its characteristics.
High-performance single CdS nanowire (nanobelt) Schottky junction solar cells with Au/graphene Schottky electrodes.

Yu Ye,Yu Dai,Lun Dai,Zujin Shi,Nan Liu,Fei Wang,Lei Fu,Ruomin Peng,Xiaonan Wen,Zhijian Chen,Zhongfan Liu,Guogang Qin

DOI: https://doi.org/10.1021/am1007672

IF: 9.5

2010-01-01

ACS Applied Materials & Interfaces

Abstract:High-performance single CdS nanowire (NW) as well as nanobelt (NB) Schottky junction solar cells were fabricated. Au (5 nm)/graphene combined layers were used as the Schottky contact electrodes to the NWs (NBs). Typical as-fabricated NW solar cell shows excellent photovoltaic behavior with an open circuit voltage of ∼0.15 V, a short circuit current of ∼275.0 pA, and an energy conversion efficiency of up to ∼1.65%. The physical mechanism of the combined Schottky electrode was discussed. We attribute the prominent capability of the devices to the high-performance Schottky combined electrode, which has the merits of low series resistance, high transparency, and good Schottky contact to the CdS NW (NB). Besides, a promising site-controllable patterned graphene transfer method, which has the advantages of economizing graphene material and free from additional etching process, was demonstrated in this work. Our results suggest that semiconductor NWs (NBs) are promising materials for novel solar cells, which have potential application in integrated nano-optoelectronic systems.
Optically Resonant Bulk Heterojunction PbS Quantum Dot Solar Cell

Stefan W. Tabernig,Lin Yuan,Andrea Cordaro,Zhi Li Teh,Yijun Gao,Robert J. Patterson,Andreas Pusch,Shujuan Huang,Albert Polman

DOI: https://doi.org/10.1021/acsnano.1c11330

IF: 17.1

2022-08-30

ACS Nano

Abstract:We design an optically resonant bulk heterojunction solar cell to study optoelectronic properties of nanostructured p-n junctions. The nanostructures yield strong light-matter interaction as well as distinct charge-carrier extraction behavior, which together improve the overall power conversion efficiency. We demonstrate high-resolution substrate conformal soft-imprint lithography technology in combination with state-of-the art ZnO nanoparticles to create a nanohole template in an electron...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Spectral Splitting Solar Cells Constructed with InGaP/GaAs Two-Junction Subcells and Infrared PbS Quantum Dot/ZnO Nanowire Subcells

Haibin Wang,Shoichiro Nakao,Naoya Miyashita,Yusuke Oteki,Maxime Giteau,Yoshitaka Okada,Tatsuya Takamoto,Hidenori Saito,Shinichi Magaino,Katsuhiko Takagi,Tetsuya Hasegawa,Takaya Kubo,Takumi Kinoshita,Jotaro Nakazaki,Hiroshi Segawa

DOI: https://doi.org/10.1021/acsenergylett.2c01380

IF: 22

2022-07-08

ACS Energy Letters

Abstract:We constructed an infrared PbS colloidal quantum dot (QD)/ZnO nanowire (NW) solar cell to develop a solution-processed bottom solar cell for multijunction solar cells. PbS QD/ZnO NW interdigitated structures comprising 1 μm long ZnO NWs enable the construction of spatially separated carrier pathways and thick PbS QD layers for high infrared light harvesting. Additionally, optical management plays an essential role in the harvesting process. Using infrared transparent conductive oxides as window layers and a wide-band-gap QD electron blocking layer (EBL), the parasitic absorption of the EBL is reduced and the reabsorption of the light reflected is enhanced by the metal back contact. Thus, the developed solar cell produced a short-circuit current density of 39.2 mA/cm2 under 1 sun illumination and 17.4 mA/cm2 over an 870 nm infrared region. Furthermore, series-connected spectral splitting solar cells, comprising an InGaP/GaAs top/middle (2J-TM) subcell and the infrared PbS CQD/ZnO NW bottom (1J-B) subcell, yielded a power conversion efficiency of 30.5% under 1 sun illumination.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology,energy & fuels,electrochemistry
Two-Photon Photocurrent in InGaN/GaN Nanowire Intermediate Band Solar Cells

Ross Cheriton,Sharif M. Sadaf,Luc Robichaud,Jacob J. Krich,Zetian Mi,Karin Hinzer

DOI: https://doi.org/10.48550/arXiv.2007.07037

2020-07-14

Abstract:Intermediate band solar cells hold the promise of ultrahigh power conversion efficiencies using a single semiconductor junction. Many current implementations use materials with bandgaps too small to achieve maximum efficiency or use cost-prohibitive substrates. Here we demonstrate a material system for intermediate band solar cells using InGaN/GaN quantum-dot-in-nanowire heterostructures grown directly on silicon to provide a lower cost, large-bandgap intermediate band solar cell platform. We demonstrate sequential two-photon current generation with sub-bandgap photons, the hallmark of intermediate band solar cell operation, through vertically stacked quantum dots in the nanowires. Near-infrared light biasing with an 850 nm laser intensity up to 200 W/cm2 increases the photocurrent above and below the bandgap by up to 19% at 78 K, and 44% at room temperature. The nanostructured III-nitride strategy provides a route towards realistic room temperature intermediate band solar cells while leveraging the cost benefits of silicon substrates.

Applied Physics,Materials Science
Composition, Optical Resonances, and Doping of InP/InGaP Nanowires for Tandem Solar Cells: a Micro-Raman Analysis

Irene Mediavilla,Jose Luis Pura,Vanessa Giselle Hinojosa,Beatriz Galiana,Lukas Hrachowina,Magnus T. Borgström,Juan Jimenez,Magnus T. Borgström

DOI: https://doi.org/10.1021/acsnano.3c12973

IF: 17.1

2024-03-28

ACS Nano

Abstract:We present a micro-Raman study of InP/InGaP tandem junction photovoltaic nanowires. These nanowires render possible InGaP compositions that cannot be made in thin films due to strain. The micro-Raman spectra acquired along the nanowires reveal the existence of compositional changes in the InGaP alloy associated with the doping sequence. The heavily Zn-doped In(x)Ga(1-x)P (x is the In molar fraction) side of the tunnel diode is Ga rich, x = 0.25, with respect to the n-type and intrinsic segments...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Substantial Improvement of Short Wavelength Response in n-SiNW/PEDOT:PSS Solar Cell

Zhaoyun Ge,Ling Xu,Yunqing Cao,Tao Wu,Hucheng Song,Zhongyuan Ma,Jun Xu,Kunji Chen

DOI: https://doi.org/10.1186/s11671-015-0998-9

2015-01-01

Nanoscale Research Letters

Abstract:We report herein on the effects of silicon nanowire with different morphology on the device performance of n-SiNW/PEDOT:PSS hybrid solar cells. The power conversion efficiency (PCE) and external quantum efficiency (EQE) of the SiNW/PEDOT:PSS hybrid solar cells can be optimized by varying the length of the silicon nanowires. The optimal length of silicon nanowires is 0.23 μm, and the hybrid solar cell with the optimal length has the V oc of 569 mV, J sc of 30.1 mA/cm 2 , and PCE of 9.3 %. We fabricated more isolated silicon nanowires with the diluted etching solution. And the J sc of the hybrid solar cell with more isolated nanowires has a significant enhancement, from 30.1 to 33.2 mA/cm 2 . The remarkable EQE in the wavelength region of 300 and 600 nm was also obtained, which are in excess of 80 %. Our work provides a simple method to substantially improve the EQE of hybrid solar cell in the short wavelength region.
Intramolecular P-I-n Junction Photovoltaic Device Based on Selectively Doped Carbon Nanotubes

Changxin Chen,Chuanjuan Song,Junru Yang,Dingqiang Chen,Wenhuan Zhu,Chenghao Liao,Xusheng Dong,Xiaodong Liu,Liangming Wei,Nantao Hu,Rong He,Yafei Zhang

DOI: https://doi.org/10.1016/j.nanoen.2016.12.048

IF: 17.6

2017-01-01

Nano Energy

Abstract:Photovoltaic devices show promising applications in detection and energy fields as well as in next-generation optoelectronic circuits. The use of the ideal photosensitive material and device design are critical for achieving a high-performance photovoltaic device. Here, an intramolecular p-i-n junction photovoltaic device based on selectively doped carbon nanotubes is investigated. In this kind of device, the opposite ends of an individual single-walled carbon nanotube (SWCNT) channel are doped selectively by triethyloxonium hexachloroantimonate (OA) and polyethylene imine (PEI) to obtain stable p- and n- type SWCNT segments respectively, while the middle segment of the SWCNT is kept intrinsic, causing the formation of an intra-tube p-i-n junction for the efficient separation of photogenerated electron-hole pairs. The optical-absorption and electrical testing demonstrate that the OA and PEI can dope the SWCNTs into the stable p- and n- types, respectively. In the dark, the prepared p-i-n junction device behaves as a diode with a high rectification ratio >103 that can be tuned by the gate voltage. Under a 1550-nm monochromatic illumination, the device exhibits a good photovoltaic effect with a large open-circuit voltage of 0.41V and an external power conversion efficiency of ~4.2%. The quantum efficiency of the device is estimated to be as high as ~73%.

InP Single Nanowire Solar Cells

Hybrid heterojunction and photoelectrochemistry solar cell based on silicon nanowires and double-walled carbon nanotubes.

Efficiency Enhancement of Axial Junction InP Single Nanowire Solar Cells by Dielectric Coating

Reducing Zn diffusion in single axial junction InP nanowire solar cells for improved performance

Study of A Single Coaxial Silicon Nanowire for On-Chip Integrated Photovoltaic Application

Photovoltaic measurements in carbon nanotube - Amorphous silicon core/shell nanowire

Vertically aligned ZnCdS nanowire arrays/P3HT heterojunctions for solar cell applications

Inp Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

A Cathodoluminescence study of InP/InGaP axially heterostructured NWs for tandem solar cells

Heterojunction Photovoltaic Devices Utilizing Single Wall Carbon Nanotube Thin Films and Silicon Substrates

P-Cu 2O/n-ZnO nanowires on ITO glass for solar cells

Single ZnO nanowire/p-type GaN heterojunctions for photovoltaic devices and UV light-emitting diodes.

CuInSe2 nanowires from facile chemical transformation of In2Se3 and their integration in single-nanowire devices.

High-efficiency InP-based Multijunction Solar Cells

High-performance single CdS nanowire (nanobelt) Schottky junction solar cells with Au/graphene Schottky electrodes.

Optically Resonant Bulk Heterojunction PbS Quantum Dot Solar Cell

Spectral Splitting Solar Cells Constructed with InGaP/GaAs Two-Junction Subcells and Infrared PbS Quantum Dot/ZnO Nanowire Subcells

Two-Photon Photocurrent in InGaN/GaN Nanowire Intermediate Band Solar Cells

Composition, Optical Resonances, and Doping of InP/InGaP Nanowires for Tandem Solar Cells: a Micro-Raman Analysis

Substantial Improvement of Short Wavelength Response in n-SiNW/PEDOT:PSS Solar Cell

Intramolecular P-I-n Junction Photovoltaic Device Based on Selectively Doped Carbon Nanotubes