Near-infrared Electro-Optic Modulator Based on Silicon-Graphene Hybrid Structure

Ciyuan Qiu,Ting Pan,Yikai Su

DOI: https://doi.org/10.1364/oedi.2015.ot3b.2

2015-01-01

Abstract:Graphene has strong electro-optic effect which can be used to enhance the modulation efficiency of nanoscale photonic circuit. This paper describes recent developments for near-infrared electro-optic modulator based on silicon-graphene hybrid structure.

What problem does this paper attempt to address?

Electro‐Optic Modulators: On‐Chip Dual Electro‐Optic and Optoelectric Modulation Based on ZnO Nanowire‐Coated Photonic Crystal Nanocavity (advanced Optical Materials 17/2018)

Jingya Xie,Xiaoyong Hu,Chong Li,Feifan Wang,Peizhen Xu,Limin Tong,Hong Yang,Qihuang Gong

DOI: https://doi.org/10.1002/adom.201870069

IF: 9

2018-01-01

Advanced Optical Materials

Abstract:On-chip electro-optic and optoelectric dual modulation is realized by Xiaoyong Hu and coworkers (article number 1800374) using a ZnO nanowire covered photonic-crystal nanocavity. A weak 0.4-microwatt signal light induces large modulation-depth of 60% in the electric signal, while a small gate voltage of 1.5 Volt induces large modulation-depth of 75% for the signal light. This paves the way for achieving on-chip photon–electric signal interconversion, and multifunctional optoelectronic integrated devices.
High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity

Yuanda Gao,Ren-Jye Shiue,Xuetao Gan,Luozhou Li,Cheng Peng,Inanc Meric,Lei Wang,Attila Szep,Dennis Walker Jr.,James Hone,Dirk Englund

DOI: https://doi.org/10.1021/nl504860z

2014-12-19

Abstract:Nanoscale and power-efficient electro-optic (EO) modulators are essential components for optical interconnects that are beginning to replace electrical wiring for intra- and inter-chip communications. Silicon-based EO modulators show sufficient figures of merits regarding device footprint, speed, power consumption and modulation depth. However, the weak electro-optic effect of silicon still sets a technical bottleneck for these devices, motivating the development of modulators based on new materials. Graphene, a two-dimensional carbon allotrope, has emerged as an alternative active material for optoelectronic applications owing to its exceptional optical and electronic properties. Here, we demonstrate a high-speed graphene electro-optic modulator based on a graphene-boron nitride (BN) heterostructure integrated with a silicon photonic crystal nanocavity. Strongly enhanced light-matter interaction of graphene in a submicron cavity enables efficient electrical tuning of the cavity reflection. We observe a modulation depth of 3.2 dB and a cut-off frequency of 1.2 GHz.

Optics
Design and Optimization of Optical Modulators Based on Graphene-on-silicon Nitride Microring Resonators

Zeru Wu,Yujie Chen,Tianyou Zhang,Zengkai Shao,Yuanhui Wen,Pengfei Xu,Yanfeng Zhang,Siyuan Yu

DOI: https://doi.org/10.1088/2040-8986/aa5519

IF: 2.1

2017-01-01

Journal of Optics

Abstract:In order to overcome the challenge of obtaining high modulation depth due to weak graphenelight interaction, a graphene-on-silicon nitride (SiNx) microring resonator based on graphene's gate-tunable optical conductivity is proposed and studied. Geometrical parameters of grapheneon-SiNx waveguide are systematically analyzed and optimized, yielding a loss tunability of 0.04 dB mu m(-1) and an effective index variation of 0.0022. We explicitly study the interaction between graphene and a 40 mu m-radius microring resonator, where electro-absorptive and electrorefractive modulation are both taken into account. By choosing appropriate graphene coverage and coupling coefficient, a high modulation depth of over 40 dB with large fabrication tolerance is obtained.
High Efficiency Graphene-Silicon Hybrid-Integrated Thermal and Electro-Optical Modulator

Xiaoxuan Wu,Zheng-Yi Cao,Tianxiang Zhao,Yun Wu,Zhonghui Li,Spyros Doukas,Elefterios Lidorikis,Yu Xue,Liu Liu,Omid Ghaebi,Giancarlo Soavi,Junpeng Lu,Zhenhua Ni,Junjia Wang

DOI: https://doi.org/10.1039/d4nh00160e

2024-06-15

Nanoscale Horizons

Abstract:Graphene modulators are considered as a protential solution to achieve hign efficiency light modulation, and the graphene-silicon hybrid-integrated modulators are particularly faverable due to the CMOS compatibility and low cost. The exploitation of Graphene modulator latent capabilities remains an ongoing endeavour to improve the modulation and energy efficiency. Here, high-efficiency graphene-silicon hybrid-integrated thermal and electro-optical modulators are realized using gold-assisted transfer. We fabricate and demonstrate a microscale thermo-optical modulator with a tuning efficiency of 0.037 nm/mW and a high heating performance of 67.4 K∙μm 3 ∙mW -1 on a small active area of 7.54 μm 2 and a graphene electro-absorption modulator featuring a high speed date rate reaching 48 Gb/s and a low power conspution of 200 fJ/bit. These devices show superior performances compared to state of the art in terms of efficiency, low process complexity, and compact device footage, which can support the realization of high-performance graphene-silicon hybrid-integrated photonic circuits with CMOS compatibility.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Analysis of an Electro-Optic Modulator Based on a Graphene-Silicon Hybrid 1D Photonic Crystal Nanobeam Cavity.

Ting Pan,Ciyuan Qiu,Jiayang Wu,Xinhong Jiang,Boyu Liu,Yuxing Yang,Huanying Zhou,Richard Soref,Yikai Su

DOI: https://doi.org/10.1364/oe.23.023357

IF: 3.8

2015-01-01

Optics Express

Abstract:We propose and numerically study an on-chip graphene-silicon hybrid electro-optic (EO) modulator operating at the telecommunication band, which is implemented by a compact 1D photonic crystal nanobeam (PCN) cavity coupled to a bus waveguide with a graphene sheet on top. Through electrically tuning the Fermi level of the graphene, both the quality factor and the resonance wavelength can be significantly changed, thus the in-plane lightwave can be efficiently modulated. Based on finite-difference time-domain (FDTD) simulation results, the proposed modulator can provide a large free spectral range (FSR) of 125.6 nm, a high modulation speed of 133 GHz, and a large modulation depth of ~12.5 dB in a small modal volume, promising a high performance EO modulator for wavelength-division multiplexed (WDM) optical communication systems.
Recent Developments in Graphene-Based Optical Modulators

Ran Hao,J. M. Jin,E. P. Li

DOI: https://doi.org/10.1007/s12200-014-0424-4

2014-01-01

Abstract:Graphene has shown promising perspectives in optical active components due to the large active-control of its permittivity-variation. This paper systematically reviews the recent developments of graphene-based optical modulators, including material property, single-layer , multi-layer , few-layer graphene-based modulators and corresponding figure-of-merits.The results showed graphene is an excellent material for enhancing silicons weak modulation capability after it is integrated into the silicon platform, showing significant influence on optical interconnects in future integrated optoelectronic circuits.
Recent Progress in Graphene-Based Optical Modulators on Silicon Photonics Platform

Ciyuan Qiu,Huiying Zeng,Yikai Su

DOI: https://doi.org/10.1360/nso/20220031

2022-01-01

National Science Open

Abstract:Graphene is a 2D material which has attracted tremendous interest from academia and industry,due to its attractive electrical and optical properties.By integrating graphene onto silicon photonics platform,various high-performance electro-optic and thermo-optic modulators have been demonstrated.In this paper,such graphene-based optical modulators are re-viewed.The concept and principle of optical modulations are firstly analyzed and then an overview of the developing trends of optical modulators is presented.Meanwhile,the performances of graphene-based optical modulators,including power con-sumptions and speeds of electro-optic modulators as well as tuning efficiencies of thermo-optic modulators,are then evaluated and discussed in detail.All these optical modulators would play important roles in a wide range of applications including telecom,interconnects,computing,quantum information processing,and beam steering.
Electro-Optic Tuning Of Mid-Infrared Photonic Crystal Cavities Using Graphene

Raji Shankar,Yu Yao,Julie Frish,Ian Frank,Yi Song,Jing Kong,Federico Capasso,Marko Loncar

DOI: https://doi.org/10.1364/CLEO_SI.2013.CTu1F.5

2013-01-01

Abstract:We demonstrate electro-optical modulation of mid-infrared Si photonic crystal cavities by the electrostatic doping of graphene. A wavelength shift of 4 nm is demonstrated around a wavelength of 4.47 mu m, demonstrating the feasibility of on-chip electro-optic modulation for the mid-infrared wavelength region.
Graphene-based Silicon Modulators

Hao-wen Shu,Ming Jin,Yuan-sheng Tao,Xing-jun Wang

DOI: https://doi.org/10.1631/fitee.1800407

IF: 2.526

2019-01-01

Frontiers of Information Technology & Electronic Engineering

Abstract:With the increasing demand for capacity in communications networks, the use of integrated photonics to transmit, process and manipulate digital and analog signals has been extensively explored. Silicon photonics, exploiting the complementary-metal-oxide-semiconductor (CMOS)-compatible fabrication technology to realize low-cost, robust, compact, and power-efficient integrated photonic circuits, is regarded as one of the most promising candidates for next-generation chip-scale information and communication technology (ICT). However, the electro-optic modulators, a key component of Silicon photonics, face challenges in addressing the complex requirements and limitations of various applications under state-of-the-art technologies. In recent years, the graphene EO modulators, promising small footprints, high temperature stability, cost-effective, scalable integration and a high speed, have attracted enormous interest regarding their hybrid integration with SiPh on silicon-on-insulator (SOI) chips. In this paper, we summarize the developments in the study of silicon-based graphene EO modulators, which covers the basic principle of a graphene EO modulator, the performance of graphene electro-absorption (EA) and electro-refractive (ER) modulators, as well as the recent advances in optical communications and microwave photonics (MWP). Finally, we discuss the emerging challenges and potential applications for the future practical use of silicon-based graphene EO modulators.
Ultra-Compact Graphene-Embedded Optical Phase Modulators

Ran Hao,Jia-Min Jin,Er-Ping Li

DOI: https://doi.org/10.1109/ursigass.2014.6929409

2014-01-01

Abstract:Optical modulator is the key components in the optical communication, yet the low modulation efficiency limits its development. A high efficiency, ultra-compact optical modulator is proposed which the electro-refraction effect has been significantly enhanced. The different kinds of graphene schemes are compared and discussed. A graphene embedded Mach-Zender modulator has been theoretically demonstrated with the advantage of ultra-compact footprint (4×30 μm2), high modulation efficiency (20 V·μm), fast modulation speed and large extinction ratio (35dB). Our results may promote various on-chip active components, boosting the utilization of graphene in optical applications.
Multifunctional graphene optical modulator and photodetector integrated on silicon waveguides

Nathan Youngblood,Yoska Anugrah,Rui Ma,Steven J. Koester,Mo Li

DOI: https://doi.org/10.1021/nl500712u

2014-02-28

Abstract:For optical communication, information is converted between optical and electrical signal domains at a high rate. The devices to achieve such a conversion are various types of electro-optical modulators and photodetectors. These two types of optoelectronic devices, equally important, require different materials and consequently it has been challenging to realize both using a single material combination, especially in a way that can be integrated on the ubiquitous silicon platform. Graphene, with its gapless band structure, stands out as a unique optoelectronic material that allows both photodetection and optical modulation. Here, we demonstrate a single graphene-based device that simultaneously provides both efficient optical modulation and photodetection. The graphene device is integrated on a silicon waveguide and is tunable with a gate made from another layer of graphene to achieve near-infrared photodetection responsivity of 57 mA/W and modulation depth of 64%. This novel multifunctional device may lead to many unprecedented optoelectronic applications.

Optics,Mesoscale and Nanoscale Physics
High‐Efficiency All‐Optical Modulator Based on Ultra‐Thin Silicon/Graphene Hybrid Waveguides

Hongyuan Cao,Mingfei Ding,Haitao Chen,Chaoyue Liu,Laiwen Yu,Mingyu Zhu,Weike Zhao,Jingshu Guo,Huan Li,Zejie Yu,Shiming Gao,Daoxin Dai

DOI: https://doi.org/10.1002/adom.202301549

IF: 9

2023-10-14

Advanced Optical Materials

Abstract:A high‐efficiency all‐optical modulator based on ultra‐thin silicon/graphene hybrid waveguides is demonstrated with a modulation depth exceeding 2 dB, a saturation threshold of 0.9 pJ per pulse, and a modulation efficiency of 0.052 dB μm−1 by exploiting the enhanced light‐graphene interaction strength. The present ultra‐thin silicon/graphene hybrid waveguides pave the way for the applications of ultrafast and energy‐efficient all‐optical information processing. All‐optical modulation plays a key role in next‐generation optical processing and has attracted enormous attention worldwide. With extraordinary optoelectronic characteristics and friendly integration compatibility with various nanostructures, graphene shows great potential for ultrafast and energy‐efficient all‐optical modulation. Here, high‐efficiency on‐chip all‐optical modulation is experimentally demonstrated based on ultra‐thin silicon/graphene hybrid waveguides, which are complementary‐metal‐oxide‐semiconductor‐compatible and easy to fabricate. Owing to the enhanced light‐graphene interaction enabled by the ultra‐thin silicon photonic platform, the optical nonlinear absorption in graphene is greatly enhanced and a modulation depth of >2 dB is achieved with a saturation threshold of 0.9 pJ per pulse for a 50‐μm‐long modulator. The measured modulation efficiency is as high as 0.052 dB μm−1. Furthermore, the proposed all‐optical modulator has the potential to operate at a bandwidth of hundreds of gigahertz. The present hybrid integration of graphene on ultra‐thin silicon photonic waveguides paves the way toward the applications of on‐chip ultrafast and energy‐efficient all‐optical information processing.

materials science, multidisciplinary,optics
Device Architectures for Low Voltage and Ultrafast Graphene Integrated Phase Modulators

Dun Mao,Chen Cheng,Feifan Wang,Yahui Xiao,Tiantian Li,Lorry Chang,Anishkumar Soman,Thomas Kananen,Xian Zhang,Michael Krainak,Po Dong,Tingyi Gu

DOI: https://doi.org/10.1109/JSTQE.2020.3026357

IF: 4.9

2021-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:The atomic layer thin geometry and semi-metallic band diagram of graphene can be utilized for significantly improving the performance matrix of integrated photonic devices. Its semiconductor-like behavior of Fermi-level tunability allows graphene to serve as an active layer for electro-optic modulation. As a low loss metal layer, graphene can be placed much closer to active layer for low voltage operation. In this work, we investigate hybrid device architectures utilizing semiconductor and metallic properties of the graphene for ultrafast and energy-efficient electrooptic phase modulators on semiconductor and dielectric platforms. (1) Directly contacted graphene-silicon heterojunctions. Without the oxide layer, the carrier density of graphene can be modulated by direct contact to silicon layer, while silicon intrinsic region stays mostly depleted. With doped silicon as electrodes, carriers can be quickly injected and depleted from the active region in graphene. The ultrafast carrier transit time and small RC constant promise ultrafast modulation speed (3 dB bandwidth of 67 GHz) with an estimated V p center dot L of 1.19 V center dot mm. (2) Graphene integrated lithium niobite modulator. As a transparent electrode, graphene can be placed close to integrated lithium niobate waveguide for improving coupling coefficient between optical mode profile and electric field with minimal additional loss (4.6 dB/cm). Numerical simulation indicates a 2.5x improvement of electro-optic field overlap coefficient, with an estimated V p of 0.2 V.
Ultracompact optical modulator based on graphene-silica metamaterial.

Longzhi Yang,Ting Hu,Ao Shen,Chongyang Pei,Bing Yang,Tingge Dai,Hui Yu,Yubo Li,Xiaoqing Jiang,Jianyi Yang

DOI: https://doi.org/10.1364/OL.39.001909

IF: 3.6

2014-01-01

Optics Letters

Abstract:We present an ultracompact electro-optic modulator with a length of 15 nm by utilizing a permittivity-tunable metamaterial channel, which is composed of alternative layers of graphene and silica. Optical waves can propagate through the metamaterial channel only if its permittivity is tuned to be near zero. The finite-difference time-domain (FDTD) simulations show the insertion loss is roughly -0.27 dB while the 3 dB extinction ratio is obtained with a 0.8 V gate voltage. The device's footprint is as small as 0.01 mu m(2). This modulator consumes low power and can potentially be ultrafast. (C) 2014 Optical Society of America
Nanoscale Graphene Electro-Optic Modulators

Zhaolin Lu,Wangshi Zhao

DOI: https://doi.org/10.48550/arXiv.1112.3361

2011-12-31

Abstract:Research on graphene has revealed its unique optical properties, including strong coupling with light, high-speed operation, and gate-variable optical conductivity, which promise to satisfy the needs of future electro-optic (EO) modulators. In particular, recent work demonstrated a broadband EO modulator based on the interband absorption of graphene with overall length only 40{\mu}m. However, compared with the size of on-chip electronic components it is still bulky. On-chip optical interconnects require EO modulation at the nanoscale. The key to achieve nanoscale graphene EO modulation is to greatly enhance light-graphene interaction based on novel waveguides and platforms. Herein, we present our recent exploration of graphene EO modulators based on graphene sandwiched in dielectric or plasmonic waveguides. With a suitable gate voltage, the dielectric constant of graphene can be tuned to be very small due to the effect of intraband electronic transition, resulting in "graphene-slot waveguides" and greatly enhanced absorption modes. Up to 3-dB modulation depth can be achieved within 800nm long silicon waveguides, or 120nm long plasmonic waveguides based on small signal analysis. They have the advantages of nanoscale footprints, small insertion loss, low power consumption, and potentially ultrahigh speed, as well as being CMOS-compatible.

Optics
Low-power Electro–optic Phase Modulator Based on Multilayer Cgraphene/silicon Nitride Waveguide*

Lanting Ji,Wei Chen,Yang Gao,Yan Xu,Chi Wu,Xibin Wang,Yunji Yi,Baohua Li,Xiaoqiang Sun,Daming Zhang

DOI: https://doi.org/10.1088/1674-1056/ab943b

2020-01-01

Chinese Physics B

Abstract:Electro–optic modulator is a key component for on-chip optical signal processing. An electro–optic phase modulator based on multilayer graphene embedded in silicon nitride waveguide is demonstrated to fulfill low-power operation. Finite element method is adopted to investigate the interaction enhancement between the graphene flake and the optical mode. The impact of multilayer graphene on the performance of phase modulator is studied comprehensively. Simulation results show that the modulation efficiency improves with the increment of graphene layer number, as well as the modulation length. The 3-dB bandwidth of around 48 GHz is independent of graphene layer number and length. Compared to modulator with two- or four-layer graphene, the six-layer graphene/silicon nitride waveguide modulator can realize π phase shift at a low-power consumption of 14 fJ/bit when the modulation length is 240 μm.
Graphene on Silicon Modulators

V. Sorianello,G. Contestabile,M. Romagnoli

DOI: https://doi.org/10.1109/JLT.2020.2974189

2020-03-05

Abstract:Graphene is a 2D material with appealing electronic and optoelectronic properties. It is a zero-bandgap material with valence and conduction bands meeting in a single point (Dirac point) in the momentum space. Its conductivity can be changed by shifting the Fermi level energy via an external electric field. This important property determines broadband and tunable absorption at optical frequencies. Moreover, its conductivity is a complex quantity, i.e. Graphene exhibits both electro-absorption and electro-refraction tunability, and this is an intriguing property for photonic applications. For example, it can be combined as an active material for silicon waveguides to realize efficient detectors, switches and modulators. In this paper, we review our results in the field, focusing on graphene-based optical modulators integrated on Silicon photonic platforms. Results obtained in the fabrication of single- and double-layer capacitive modulators are reported showing intensity and phase modulation, resilience of the generated signals to chromatic dispersion because of proper signal chirp and operation up to 50 Gb/s.

Applied Physics,Optics
A Novel Graphene-Silicon Hybrid Waveguide for Nonlinearity Enhancement in Near-Infrared Band

Qiang Jin,Jiamei Lu,Qiang Yan,Xibin Li,Qianyu Gao,Shiming Gao

DOI: https://doi.org/10.1364/cleo_at.2015.jtu5a.27

2015-01-01

Abstract:A novel graphene-silicon hybrid waveguide is proposed to enhance the nonlinearity in near-infrared band using a MoO3 overlayer for light confinement. A four-wave mixing efficiency of -27.3 dB is numerically obtained in a 25-μm-long waveguide.
A Graphene-on-gap Modulator with High Modulation Efficiency

Ran Hao,Ziwei Ye,Xiliang Peng,Erping Li

DOI: https://doi.org/10.1109/icocn.2017.8121398

2017-01-01

Abstract:We propose a high efficient graphene-on-gap modulator (GOGM) by employing the hybrid plasmonic effect, whose modulation efficiency is ~8-folds larger than that of present graphene-on-silicon modulator (GOSM) (~0.1 dB / μm). The proposed modulator has the advantage of short modulation length ~3.6 μm, relatively low insertion loss ~0.32 dB and larger modulation bandwidth ~0.48 THz. Moreover, an efficient taper coupler has been designed to convert the quasi-transverse electric (TE) mode of conventional silicon waveguide to the hybrid plasmonic mode of GOGM, with a high coupling efficiency of 91%. This study may promote the design of high-performance on-chip electro-optical modulator.
Characteristics of Electro-Refractive Modulating Based on Graphene-Oxide-Silicon Waveguide

Chao Xu,Yichang Jin,Longzhi Yang,Jianyi Yang,Xiaoqing Jiang

DOI: https://doi.org/10.1364/oe.20.022398

IF: 3.8

2012-01-01

Optics Express

Abstract:Graphene has attracted a high level of research interest because of its outstanding electronic transport properties and optical properties. Based on the Kubo formalism and the Maxwell equations, it's demonstrated that the optical conductivity of graphene can be controlled through the applied voltage. And we find that the graphene-oxide-silicon (GOS) based waveguide can be made into either the electro-absorptive or electron-refractive modulators. Using graphene as the active medium, we present a new electro-refractive Mach-Zender interferometer based on the GOS structure. This new GOS-based electron-refractive modulation mechanism can enable novel architectures for on-chip optical communications.

Near-infrared Electro-Optic Modulator Based on Silicon-Graphene Hybrid Structure

Electro‐Optic Modulators: On‐Chip Dual Electro‐Optic and Optoelectric Modulation Based on ZnO Nanowire‐Coated Photonic Crystal Nanocavity (advanced Optical Materials 17/2018)

High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity

Design and Optimization of Optical Modulators Based on Graphene-on-silicon Nitride Microring Resonators

High Efficiency Graphene-Silicon Hybrid-Integrated Thermal and Electro-Optical Modulator

Analysis of an Electro-Optic Modulator Based on a Graphene-Silicon Hybrid 1D Photonic Crystal Nanobeam Cavity.

Recent Developments in Graphene-Based Optical Modulators

Recent Progress in Graphene-Based Optical Modulators on Silicon Photonics Platform

Electro-Optic Tuning Of Mid-Infrared Photonic Crystal Cavities Using Graphene

Graphene-based Silicon Modulators

Ultra-Compact Graphene-Embedded Optical Phase Modulators

Multifunctional graphene optical modulator and photodetector integrated on silicon waveguides

High‐Efficiency All‐Optical Modulator Based on Ultra‐Thin Silicon/Graphene Hybrid Waveguides

Device Architectures for Low Voltage and Ultrafast Graphene Integrated Phase Modulators

Ultracompact optical modulator based on graphene-silica metamaterial.

Nanoscale Graphene Electro-Optic Modulators

Low-power Electro–optic Phase Modulator Based on Multilayer Cgraphene/silicon Nitride Waveguide*

Graphene on Silicon Modulators

A Novel Graphene-Silicon Hybrid Waveguide for Nonlinearity Enhancement in Near-Infrared Band

A Graphene-on-gap Modulator with High Modulation Efficiency

Characteristics of Electro-Refractive Modulating Based on Graphene-Oxide-Silicon Waveguide