First-principles studies of structural and electronic features of Mo-doped diamond
M. Li,Z. An,X. Tan,H. Wang,J. Wang,Y. Ren,S. Sun,H. Qi,Q. Yang
DOI: https://doi.org/10.1007/s12648-023-02615-0
2023-02-18
Indian Journal of Physics
Abstract:In this study, density functional theory is used to investigate the stability, electronic structure, and energy level transition of the defect structures of Mo-doped diamond based on the first-principles method. The effect of N, B, and Si co-doping on diamond MoV color centers is also analyzed. The results show that the diamond defects with the single-vacancy structure, MoV, are the most stable, and the zero-phonon line of the diamond MoV defects is predicted to be at 599.43 nm, that is, in the orange spectral region. Incorporating N atoms forms a structure similar to that of the NV color center, which is a potential luminescent center. Furthermore, incorporating B and Si atoms does not generate new impurity states, and the system maintains its spin polarization and semiconductor properties. When a B atom replaces one of the bonded C atoms in the MoV defects, the MoV-B composite defect structure has a superior energy-band structure and luminescence properties. Thus, it is expected to be employed as a new color center. Mo-related diamond defects emit light in the visible region, providing a basis for the laboratory preparation of related defects.