Crystal Growth and Structural Characterization of Cs2LiLaBr6:Ce Using Neutron Diffraction
Zhuochen Cai,Ziang Yin,Xianggang Zhang,Fan Yang,Ningbo Jia,Wen Yin,Qinghua Zhao,Chunhai Wang,Fa Luo,Aizhong Yue,Tao Wang
DOI: https://doi.org/10.1002/crat.202300291
2024-02-16
Crystal Research and Technology
Abstract:High‐quality CLLB:Ce Crystals are grown through Vertical Bridgman method. Neutron and X‐ray diffraction reveal the crystal structure of CLLB:Ce. The impact of Ce3+ doping on cell parameters of CLLB: Ce are demonstrated, and the potential presence of other defects are discussed. Ce‐doped Cs2LiLaBr6 (CLLB) scintillator crystals, known for their superior neutron/gamma dual‐mode detection capability and exceptional scintillation properties, have garnered significant attention for both fundamental science and practical applications. The role of Ce3+ cations as luminescent centers is pivotal, influencing the scintillation properties as their concentration varies. While the effects of Ce3+ concentration on scintillation performance are well‐documented, the ramifications for crystalline structure remain less explored. In this study, high‐quality CLLB:Ce single crystals are fabricated(atomic packing factor of maximum doped Ce is 0.04%) using the vertical Bridgman (VB) method and subsequently characterized their crystalline structure by neutron diffraction, X‐ray diffraction (XRD), and elemental analysis. The findings reveal a correlation between Ce3+ concentration and the crystal cell parameters, presenting intriguing deviations from Vegard's law. Such observations suggest the potential presence of alternative defects, potentially Li+ interstitials, in CLLB:Ce. This work offers critical insights for advancing the understanding and optimization of CLLB:Ce scintillators.
crystallography