Abstract:The study reports the chemical valence state of transition metal precursors dependent growth for WS2, MoS2, and EuS. The mechanism can be discussed on four factors: evaporation temperature, skipping of reaction steps, atomic binding energy of the precursors, and formation energy. The lateral size and quality of the as‐grown flakes are all improved. The photoelectric properties of WS2 and MoS2 are comparable with or better than previous reports. Transition metal chalcogenides (TMCs) have attracted wide attentions as a class of promising material for both fundamental investigations and electronic applications due to their atomic thin thickness, dangling bond‐free surface, and excellent electronic properties. Specifically, TMCs show outstanding properties such as good thermal conductivity, robust mechanical properties, and extraordinary electronical characteristics, bestowing them utility in both fundamental research and applications. Recently, the development of post‐Moore electronics based on TMCs calls for their large‐size and single‐crystal growth. However, researchers about synthesis usually focus on controlling several growth parameters (such as growth temperature, flow rate, and time). Herein, it is reported that the chemical valence states of transition metal precursors play an important role in controlling the lateral size and crystal quality for TMCs. The study discusses the valence states‐dependent growth mechanism for WS2 and MoS2 from four factors: evaporation temperature, skipping of reaction steps, atomic binding energy of the precursors, and formation energy. In addition, the as‐grown WS2 and MoS2 nanoflakes exhibit good photoelectric response properties. For EuS, the growth results are obviously different by using EuBr3 and EuBr2 as precursors. The studies provide a unique perspective and also new knowledge to controllably grow large‐size and good crystal quality TMCs.

Tuning the morphology of 2D transition metal chalcogenides via oxidizing conditions

Morphology Engineering in Monolayer MoS2‐WS2 Lateral Heterostructures

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Space-confined and Substrate-Directed Synthesis of Transition-Metal Dichalcogenide Nanostructures with Tunable Dimensionality.

Single-layer Mo5Te8 ― A New Polymorph of Layered Transition-Metal Chalcogenide

Judicious Selection of Precursors with Suitable Chemical Valence State for Controlled Growth of Transition Metal Chalcogenides

Robust Growth of Two-Dimensional Metal Dichalcogenides and Their Alloys by Active Chalcogen Monomer Supply

Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition

Space-confined CVD growth of 2D-MoS<sub>2</sub> crystals with tunable dimensionality <i>via</i> adjusting growth conditions

Fabrication and Optical Performance of Mo1-xWxS2 Monolayer with Different Composition Ranges Via One-Step Chemical Vapor Deposition Approach

Robust synthesis of two-dimensional metal dichalcogenides and their alloys by active chalcogen monomer supply

Enhancing stability by tuning element ratio in 2D transition metal chalcogenides

Structural Evolution of Atomically Thin 1t’‐mote2 Alloyed in Chalcogen Atmosphere

Composition and phase engineering of metal chalcogenides and phosphorous chalcogenides

Morphological Evolution of Monolayer MoS2 Single-Crystalline Flakes

Controllable Growth of Wafer-Scale Monolayer Transition Metal Dichalcogenides Ternary Alloys with Tunable Band Gap.

Oriented lateral growth of monolayer MoS2 mediated by highly-oriented MoO2 nanorods on sapphire

Atomically Thin Decoration Layers for Robust Orientation Control of 2D Transition Metal Dichalcogenides

Modified Spatially Confined Strategy Enabled Mild Growth Kinetics for Facile Growth Management of Atomically-Thin Tungsten Disulfides

Periodical Ripening for MOCVD Growth of Large 2D Transition Metal Dichalcogenide Domains

Substrate Lattice-Guided Seed Formation Controls the Orientation of 2D Transition-Metal Dichalcogenides