Application of the effective resistivity in MHD and Hall MHD simulations for collisionless magnetic reconnection

H. W. Zhang,Z. W. Ma,T. Chen
DOI: https://doi.org/10.48550/arxiv.2201.12756
2022-01-01
Abstract: The off-diagonal electron pressure terms are well-known for the frozen-in condition breakdown in collisionless magnetic reconnection, but are naturally kinetic and hard to employ in magnetohydrodynamics simulations. Considering the inadequacy of MHD and Hall MHD in neglecting the important electron dynamics like inertia item and nongyrotropic pressure, we studied the kinetic features of electrons and ions in the diffusion region and suggested a new effective resistivity model involving basic dynamics of charged particles in diffusion region, which is found to be electron dominated in most of large ion-electron mass ratio cases [Z W Ma et al., Scientific Reports (2018) 8:10521]. The application of the effective resistivity in MHD and Hall MHD remarkably improves the simulation results compared with traditional models. Especially for the Hall MHD case with effective resistivity, the peak reconnection rate, major topological structures of the reconnection field and the current sheet are quite consistent with the reported particle-in-cell (PIC) and hybrid simulation results.
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