Abstract:A central question in graphene chemistry is to what extent chemical modification can control an electronically accessible band gap in monolayer and bilayer graphene (MLG and BLG). Density functional theory predicts gaps in covalently functionalized graphene as high as 2 eV, while this approach neglects the fact that lattice symmetry breaking occurs over only a prescribed radius of nanometer dimension, which we label the S-region. Therefore, high chemical conversion is central to observing this band gap in transport. We use an electrochemical approach involving phenyl-diazonium salts to systematically probe electronic modification in MLG and BLG with increasing functionalization for the first time, obtaining the highest conversion values to date. We find that both MLG and BLG retain their relatively high conductivity after functionalization even at high conversion, as mobility losses are offset by increases in carrier concentration. For MLG, we find that band gap opening as measured during transport is linearly increased with respect to the I(D)/I(G) ratio but remains below 0.1 meV in magnitude for SiO(2) supported graphene. The largest transport band gap obtained in a suspended, highly functionalized (I(D)/I(G) = 4.5) graphene is about 1 meV, lower than our theoretical predictions considering the quantum interference effect between two neighboring S-regions and attributed to its population with midgap states. On the other hand, heavily functionalized BLG (I(D)/I(G) = 1.8) still retains its signature dual-gated band gap opening due to electric-field symmetry breaking. We find a notable asymmetric deflection of the charge neutrality point (CNP) under positive bias which increases the apparent on/off current ratio by 50%, suggesting that synergy between symmetry breaking, disorder, and quantum interference may allow the observation of new transistor phenomena. These important observations set definitive limits on the extent to which chemical modification can control graphene electronically.

Biomolecular Control over Local Gating in Bilayer Graphene Induced by Ferritin

Ion Density-Dependent Dynamic Conductance Switching in Biomimetic Graphene Nanopores.

Magnetic‐Electrical Synergetic Control of Non‐Volatile States in Bilayer Graphene‐CrOCl Heterostructures

Control of proton transport and hydrogenation in double-gated graphene

Quantifying the effect of ionic screening with protein-decorated graphene transistors

Non‐Local Electrostatic Gating Effect in Graphene Revealed by Infrared Nano‐Imaging

Transport Measurements on Ultra-Clean Dual-Gated Suspended Bilayer Graphene

Electrically Inert h-BN/Bilayer Graphene Interface in All-Two-Dimensional Heterostructure Field Effect Transistors

Graphene Field Effect Transistors with Ferroelectric Gating

Disorder Imposed Limits of Mono- and Bilayer Graphene Electronic Modification Using Covalent Chemistry.

Electrostatic Modulation for Enhanced Ion Selectivity in Gate-All-Around Multilayer Stacked Graphene Nanopore

Controlling the layer localization of gapless states in bilayer graphene with a gate voltage

Gate-Switchable Molecular Diffusion on a Graphene Field-Effect Transistor

Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor

Tuning Electron Transport in Graphene-Based Field-Effect Devices Using Block Co-Polymers.

Electrically inert h-BN/bilayer graphene interface in all-2D-heterostructure FETs

Manipulating the voltage drop in graphene nanojunctions using a gate potential

Dirac-cone Induced Gating Enhancement in Single-Molecule Field-Effect Transistors

Gate-controlled topological conducting channels in bilayer graphene

Electrochemical Gate-Controlled Charge Transport in Graphene in Ionic Liquid and Aqueous Solution