Abstract:Because disorders are inevitable in realistic nanodevices, the capability to quantitatively simulate the disorder effects on electron transport is indispensable for quantum transport theory. Here, we report a unified and effective first-principles quantum transport method for analyzing effects of chemical or substitutional disorder on transport properties of nanoelectronics, including averaged transmission coefficient, shot noise, and disorder-induced device-to-device variability. All our theoretical formulations and numerical implementations are worked out within the framework of the tight-binding linear muffin tin orbital method. In this method, we carry out the electronic structure calculation with the density functional theory, treat the nonequilibrium statistics by the nonequilbrium Green's function method, and include the effects of multiple impurity scattering with the generalized nonequilibrium vertex correction (NVC) method in coherent potential approximation (CPA). The generalized NVC equations are solved from first principles to obtain various disorder-averaged two-Green's-function correlators. This method provides a unified way to obtain different disorder-averaged transport properties of disordered nanoelectronics from first principles. To test our implementation, we apply the method to investigate the shot noise in the disordered copper conductor, and find all our results for different disorder concentrations approach a universal Fano factor 1/3. As the second test, we calculate the device-to-device variability in the spin-dependent transport through the disordered Cu/Co interface and find the conductance fluctuation is very large in the minority spin channel and negligible in the majority spin channel. Our results agree well with experimental measurements and other theories. In both applications, we show the generalized nonequilibrium vertex corrections play a determinant role in electron transport simulation. Our results demonstrate the effectiveness of the first-principles generalized CPA-NVC for atomistic analysis of disordered nanoelectronics, extending the capability of quantum transport simulation.

Non-Equilibrium Vertex Correction Theory in First Principle: From Specular to Diffusive Scattering in Fe/MgO/Fe Magnetic Tunnel Junction

Disorder Scattering in Magnetic Tunnel Junctions: Theory of Nonequilibrium Vertex Correction.

Generalized Nonequilibrium Vertex Correction Method in Coherent Medium Theory for Quantum Transport Simulation of Disordered Nanoelectronics

First-principles nonequilibrium dynamical cluster theory for quantum transport simulations of disordered nanoelectronic devices

Impurity-limited Quantum Transport Variability in Magnetic Tunnel Junctions

First-principles Quantum Transport Method for Disordered Nanoelectronics: Disorder-averaged Transmission, Shot Noise, and Device-to-device Variability

Thermoelectric Transport Through A Quantum Dot with A Magnetic Impurity

Oxygen-Vacancy-Induced Diffusive Scattering Infe/mgo/femagnetic Tunnel Junctions

Fully Relativistic First-Principles Quantum Transport Simulation of Noncollinear Spin Transfer and Spin Hall Current

Anomalous Spin-Dependent Tunneling Statistics in Fe/MgO/Fe Junctions Induced by Disorder at the Interface

Magnetic Field Influenced Electron-Impurity Scattering and Magnetotransport

The Frist-Principies Study Of Electronic Structure Of Fe/Mgo/Fe Magnetic Tunnel Junctions Interface

Non-Equilibrium Quantum Theory For Nanodevices Based On The Feynman-Vernon Influence Functional

Non-equilibrium Quantum Theory for Nanodevices Based on the Feynman–Vernon Influence Functional

Theory of Quantum Transport in Disordered Systems Driven by Voltage Pulse

Non-equilibrium Green's Function and First Principle Approach to Modeling of Multiferroic Tunnel Junctions

Modeling materials with optimized transport properties

First-principles ionized-impurity scattering and charge transport in doped materials

Giant Influence of Clustering and Anti-Clustering of Disordered Surface Roughness on Electronic Tunneling

Quantum correction simulation of random dopant-induced threshold voltage fluctuations in nanoscale metal-oxide-semiconductor structures

Shot Noise And Tunneling Magnetoresistance In Disordered Mgo-Based Double-Barrier Magnetic Tunnel Junctions: First-Principles Study