Design and Fabrication of W Band Heterogeneous Integrated Transceivers
Yu-Xiao Tao,Xiao Yang,Cheng-Rui Zhang,Liang Zhou
DOI: https://doi.org/10.1109/iws49314.2020.9360004
2020-01-01
Abstract:This paper presents the design and fabrication of W band 3-dimensional heterogeneous integration transceiver. Silicon-based X band Phase locked loop with a GaAs driver amplifier, W band SiGe transceiver and GaN power amplifier are integrated. A W band quintuple-mode filter are designed which can be integrated into the transceivers. The output power of the transceiver is about 22dBm at 94GHz.
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