Abstract:Graphene Hall effect magnetic field sensors hold great promise for the development of ultra-sensitive magnetometers. Their performance is frequently analysed using the two-channel model where electron and hole conductivities are simply added. Unfortunately, this model is unable to capture all the features of the sensor, particularly the bias current dependence of the magnetic field sensitivity. Here we present an advanced model that provides an in-depth understanding of how graphene Hall sensors operate, and demonstrate its ability to quantitatively assess their performance. First, we report the fabrication of sensors with different qualities of graphene, with the best devices achieving magnetic field sensitivities as high as 5000 ohms/T, outperforming the best silicon and narrow-gap semiconductor-based sensors. Then, we examine their performance in detail using the proposed numerical model, which combines Boltzmann formalism, with distinct Fermi levels for electrons and holes, and a new method for the introduction of substrate-induced electron-hole puddles. Importantly, the dependences of magnetic field sensitivity on bias current, disorder, substrate and Hall bar geometry are quantitatively reproduced for the first time. In addition, the model emphasizes that the performance of devices with widths of the order of the charge carrier diffusion length, is significantly affected by the bias current due to the occurrence of large and non-symmetric carrier accumulation and depletion areas near the edges of the Hall bar. The formation of these areas induces a transverse diffusion particle flux capable of counterbalancing the particle flux induced by the Lorentz force when the Hall electric field cancels out in the ambipolar regime. Finally, we discuss how sensor performance can be enhanced by Fermi velocity engineering, paving the way for future ultra-sensitive graphene Hall effect sensors.

DEPENDENCE OF MAXIMAL SENSITIVITY OF THE MAGNETIC FIELD HALL SENSORS BASED ON GRAPHENE ON TEMPERATURE

Gate-Tunable Graphene Hall Sensors with High Magnetic Field Sensitivity

Temperature Dependence of the Off‐diagonal Magnetoimpedance in Sensor Configuration Utilizing Co‐rich Amorphous Wires

Exploration of Sensitivity Limit for Graphene Magnetic Sensors

Temperature Dependence of Sensitivity of 2DEG-Based Hall-Effect Sensors

Performance of graphene Hall effect sensors: role of bias current, disorder and Fermi velocity

Flicker Noise and Magnetic Resolution of Graphene Hall Sensors at Low Frequency

High-Temperature Hall Effect Sensor Based on Epitaxial Graphene on High-Purity Semiinsulating 4H-SiC

Sensitivity enhancement of graphene Hall sensors modified by single-molecule magnets at room temperature

High Performance Hall Sensors Built on Chemical Vapor Deposition-Grown Bilayer Graphene.

Flexible Graphene Hall Sensors with High Sensitivity

High Performance Graphene Hall Sensors

Quantifying inhomogeneous magnetic fields at the micron scale using Graphene Hall-Effect sensors

Encapsulated graphene based Hall sensors on foil with increased sensitivity

Ultra-Sensitive Graphene Hall Elements

Gate-tunable graphene-based Hall sensors on flexible substrates with increased sensitivity

High-Temperature Quantum Hall Effect in Graphite-Gated Graphene Heterostructure Devices with High Carrier Mobility

Modeling of graphene Hall effect sensors for microbead detection

A High-Sensitivity Resonant Magnetic Sensor Based on Graphene Nanomechanical Resonator

Traceably Calibrated Scanning Hall Probe Microscopy at Room Temperature

Ultrasensitive Magnetic Sensors Enabled by Heterogeneous Integration of Graphene Hall Elements and Silicon Processing Circuits.