Abstract:By employing first-principles calculations within the framework of density functional theory, we investigated the structural, electronic, and magnetic properties of graphene and various two-dimensional carbon-nitride (2DNC) nanosheets. The different 2DCN gives rise to diverse electronic properties such as metals (<math> C 3 N 2</math>), semimetals (<math> C 4 N</math> and <math> C 9 N 4</math>), half-metals (<math> C 4 N 3</math>), ferromagnetic-metals (<math> C 9 N 7</math>), semiconductors (<math> C 2 N</math>, <math> C 3 N</math>, <math> C 3 N 4</math>, <math> C 6 N 6</math>, and <math> C 6 N 8</math>), spin-glass semiconductors (<math> C 10 N 9</math> and <math> C 14 N 12</math>), and insulators (<math> C 2 N 2</math>). Furthermore, the effects of adsorption and substitution of hydrogen atoms as well as N-vacancy defects on the electronic and magnetic properties are systematically studied. The introduction of point defects, including N vacancies, interstitial H impurity into graphene and different 2DCN crystals, results in very different band structures. Defect engineering leads to the discovery of potentially exotic properties that make 2DCN interesting for future investigations and emerging technological applications with precisely tailored properties. These properties can be useful for applications in various fields such as catalysis, energy storage, nanoelectronic devices, spintronics, optoelectronics, and nanosensors.

Corrigendum: Theoretical Design of Two-Dimensional Carbon Nitrides (2020 Nanotechnology 31 495707)

Theoretical Design of Two-Dimensional Carbon Nitrides

First-principles Study of Two Dimensional C3N and Its Derivatives.

Design and Theoretical Study of Novel Multifunctional 3D-BC2N Polymorphs

Penta-Pt2N4: an Ideal Two-Dimensional Material for Nanoelectronics.

C3N—A 2D Crystalline, Hole‐Free, Tunable‐Narrow‐Bandgap Semiconductor with Ferromagnetic Properties

Two-dimensional carbon nitride (2DCN) nanosheets: Tuning of novel electronic and magnetic properties by hydrogenation, atom substitution and defect engineering

Two-dimensional carbon/boron nitrides: modification, machine learning and beyond

Nanoporous C3N4, C3N5 and C3N6 nanosheets; novel strong semiconductors with low thermal conductivities and appealing optical/electronic properties

Two-Dimensional Honeycomb Monolayer of Nitrogen Group Elements and the Related Nano-Structure: A First-Principle Study

Two-Dimensional C4N Global Minima: Unique Structural Topologies and Nanoelectronic Properties

New stable two dimensional silicon carbide nanosheets

Two-dimensional octagon-structure monolayer of nitrogen group elements and the related nano-structures

Prediction of two-dimensional nodal-line semimetal in a carbon nitride covalent network

Correction to Transition Metal Dichalcogenides and Beyond: Synthesis, Properties, and Applications of Single- and Few-Layer Nanosheets

Realizing strong visible-light absorption band for 2D crystalline carbon nitride sheets induced by extending π-conjugation and introducing cyano groups

Prediction of two-dimensional C3N2 semiconductors with outstanding stability, moderate band gaps, and high carrier mobility

Prediction of Two-Dimensional Nodal-Line Semimetals in a Carbon Nitride Covalent Network

Two-dimensional tetragonal carbon nitride semiconductors with fascinating electronic/optical properties and low thermal conductivity

A first-principles study of the effects of atom impurities, defects, strain, electric field and layer thickness on the electronic and magnetic properties of the C2N nanosheet

Corrigendum: Crystallization Characteristics and Chemical Bonding Properties of Nickel Carbide Thin Film Nanocomposites (J. Phys.: Condens. Matter 26 415501)