Shubnikov–de Haas Oscillations and Electronic Structure in the Dirac Semimetal SrAgAs

Qinqing Zhu,Qi Wang,Liang Li,Zhihua Yang,Jinhu Yang,Bin Chen,Chao Cao,Hangdong Wang,Jianhua Du
DOI: https://doi.org/10.1103/physrevb.104.144305
2021-01-01
Abstract:The physical properties and electronic structure of the layered SrAgAs single crystal have been systematically studied via transport measurements and first-principles calculations. The Landau level index derived from the low-temperature Shubnikov-de Haas oscillations suggests nontrivial Berry phase of the Fermi surface. In addition, the compound exhibits high transport mobility in the whole measured temperature range. First-principles calculations indicate that the stoichiometry compound is an ideal Dirac semimetal close to semimetal-topological-insulator transition. Due to its perfect Dirac semimetallic nature, the shape and size of the Fermi surfaces could be drastically tuned by charge doping.
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