Photoluminescence Study of N-rich B-doped Diamonds Grown in NiMnCo Solvent Before and after Annealing

Xinyuan Miao,Gang Liu,Hongan Ma,Zhuangfei Zhang,Lijuan Zhou,Xiaopeng Jia

DOI: https://doi.org/10.1039/d1ce00806d

IF: 3.756

2021-01-01

CrystEngComm

Abstract:Incorporation of boron substantially decreases the luminescence of centers (NV−, Ni–N, and Co–N) in nitrogen-rich boron-doped diamonds before and after HPHT annealing.

What problem does this paper attempt to address?

Nitrogen vacancy luminescence and their phonon sidebands characteristics in nitrogen-doped diamond

Ruiang Guo,Kaiyue Wang,Yuming Tian,Hongxing Wang

DOI: https://doi.org/10.1016/j.jallcom.2022.166507

IF: 6.2

2022-11-30

Journal of Alloys and Compounds

Abstract:In this work, the nitrogen vacancy (NV) luminescence properties and their phonon sidebands in both high and low nitrogen diamonds after electron irradiation and subsequent annealing were thoroughly investigated. From the extracted results, it was demonstrated that the phonon sidebands were caused by the phonon emission behavior of the electrons located in the NV center during the induced transition process from the laser excitation. On top of that, the phonon energies of the NV0 (neutral) and NV— (negatively charged) centers were estimated at about 45 meV and 63 meV, respectively. As the measurement temperature increased, the excited electrons were more likely to return to the ground state by employing non-radiative transitions without generating phonon sidebands. As a result, the synchronous quenching of the NV luminescence and their phonon sidebands effect takes place. The complex lattice environment of the NV centers in the high nitrogen diamond leads also to a smaller thermal quenching activation energy, while the phonon process at a relatively high measurement temperature results in the manifestation of more obvious phonon sidebands of the NV centers.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Photoluminescence Studies of the Charge States of Nitrogen Vacancy Centers in Diamond after Arsenic Ion Implantation and Subsequent Annealing

Chenyang Huangfu,Yufei Zhang,Jinchen Hao,Gangyuan Jia,Haitao Wu,Xujie Wang,Wei Wang,Kaiyue Wang

DOI: https://doi.org/10.1063/5.0189911

IF: 2.877

2024-01-01

Journal of Applied Physics

Abstract:In this work, nitrogen vacancy (NV) centers of high nitrogen diamond implanted with arsenic ions were investigated by photoluminescence spectroscopy. The transition of the NV center charge state was discussed by the regularly changing laser excitation power and measurement temperature following high-temperature annealing. After high-temperature annealing, the amorphous layer generated by arsenic ion implantation is transformed into a graphitization layer, resulting in a decrease in the NV yield. The electric neutral NV (NV0) center and negatively charged NV (NV-) center are affected by both radiation recombination and Auger recombination with increasing laser power. Accompanied by the increasing measurement temperature, the intensities of NV centers gradually decreased and eventually quenched. In addition, the charge states of NV- and NV0 centers were undergoing a transition. The zero phonon line positions of NV centers were also red shift, it was attributed to the dominant role of electron-phonon interaction in the temperature-dependent displacement of diamond energy gaps. The full width at half maxima of NV center were broadened significantly at higher temperatures.
Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

DJ Qiu,HZ Wu,AM Feng,YF Lao,NB Chen,TN Xu

DOI: https://doi.org/10.1016/j.apsusc.2003.08.015

IF: 6.7

2004-01-01

Applied Surface Science

Abstract:Ni-doped ZnO (ZnO:Ni) films were fabricated on Si(001) substrates by reactive electron beam evaporation at low substrate temperature. The as-grown films were then annealed in oxygen ambient at higher temperatures. X-ray diffraction (XRD) results indicated that 5at.% Ni-doped samples are still of single phase with the ZnO-like wurtzite structure. Photoluminescence (PL) measurements of Ni-doped samples illustrated the UV-PL emission centered at about 384nm, which is ascribed to the near-band-edge (NBE) emissions of ZnO-like band structures. The UV-PL intensity becomes stronger along with the increase of annealing temperatures and reaches a maximum magnitude after annealed at 450°C. However, along with the further increase of annealing temperatures, UV-PL intensity diminishes again. The UV-PL intensity of 450°C-annealed samples is 213 times stronger than that of as-grown (doped) samples, which may render potential applications in optoelectronic devices, such as UV luminescent devices.
Generation of Nitrogen-Vacancy Color Center in Nanodiamonds by High Temperature Annealing

Xuerui Song,Guanzhong Wang,Xiaodi Liu,Fupan Feng,Junfeng Wang,Liren Lou,Wei Zhu

DOI: https://doi.org/10.1063/1.4800219

IF: 4

2013-01-01

Applied Physics Letters

Abstract:We make use of inherent vacancies and nitrogen substitutions in nanodiamonds to generate nitrogen-vacancy (NV) centers by high temperature annealing. After 800 °C annealing, low temperature photoluminescence intensity of nanodiamonds shows more than eight times improvement compared with that of unannealed samples. Confocal microscope images of well dispersed nanodiamonds indicate a dramatically increased proportion of nanodiamonds containing NV centers after annealing. Optically detected magnetic resonance spectrum of single NV center demonstrates that the resultant nanodiamonds are suitable for further application as magnetic field sensor. The annealing-oxidation method could be an attractive option for NV center generation in nanodiamonds.
Effects of High Pressure and High Temperature Annealing on the Characteristics of HPHT Diamonds with High Nitrogen Content

Yuan Nie,ShangSheng Li,Qiang Hu,JunZhuo Wang,MeiHua Hu,TaiChao Su,GuoFeng Huang,ZhanChang Li,Yong Li,HongYu Xiao

DOI: https://doi.org/10.1016/j.optmat.2023.113538

IF: 3.754

2023-01-01

Optical Materials

Abstract:The influence of nitrogen impurities on diamond is an issue that deserves continuous attention, and annealing is an important method to change the state of nitrogen in diamond. In this paper, C3H6N6 doped diamonds with high nitrogen content were synthesized then annealed at high pressure and high temperature (HPHT). After HPHT annealing, the transparency of high nitrogen diamond improved, and the pyramidal defects on the surface of nitrogen-containing diamond disappear or are destroyed. The infrared spectra show annealing causes a change in the state of aggregation of some of the nitrogen in high-nitrogen diamonds from C center to A center. Raman spectra show that the higher the nitrogen content is, the more the characteristic peaks shift is and the wider the FWHM (full width at half maxima) of diamond is. Annealing has a little effect on the position and FWHM of Raman peaks. PL spectra show that proper nitrogen concentration is conducive to increase the concentration of NV− in diamond. In addition, we found that un-doped diamond crystals synthesized by the high temperature and high pressure method had a high NV− colour center concentration after annealing. The results are helpful to further understand the defects related to nitrogen impurities in diamond.
Adjustable charge states of nitrogen-vacancy centers in low-nitrogen diamond after electron irradiation and subsequent annealing

Ruiang Guo,Kaiyue Wang,Yufei Zhang,Zunpeng Xiao,Gangyuan Jia,Hongxing Wang,Yaqiao Wu,Yuming Tian

DOI: https://doi.org/10.1063/5.0023369

IF: 4

2020-10-26

Applied Physics Letters

Abstract:In this work, we investigate the photoluminescence spectra of nitrogen-vacancy (NV) centers in low-nitrogen diamond under 200 keV electron irradiation. We discuss the dependence of NV center charge states on annealing temperature, laser excitation power, and measurement temperature. The results show that the NV centers in low-nitrogen diamond are more likely to exist in the form of NV0 centers. Annealing breaks the charge balance between two charged NV centers, and, as the annealing temperature increases (300–800 °C), NV− centers are converted into NV0 centers. Meanwhile, the NV intensities significantly increase when the nitrogen atoms capture the vacancies after electron irradiation and subsequent annealing. With increases in laser power, the NV− centers are more prone to Auger recombination, and thus, the NV− centers are converted into NV0 centers. In addition, the NV centers are quenched by increases in measurement temperature, but the measurement temperature does not affect their intensity ratio. This result indicates that low-nitrogen diamond becomes more likely to form stable NV0 and NV− centers at different measurement temperatures.

physics, applied
Effects of B-NiS Co-Doping on Diamonds Growing along {1 1 1}-Orientation under High Pressure and High Temperature

Jiaxi Chen,Shangsheng Li,Qiang Hu,Yue You,Meihua Hu,Taichao Su,Mengzhao Wang,Xubiao Zhou,Guofeng Huang,Zhanchang Li,Yong Li,Hongyu Xiao

DOI: https://doi.org/10.1016/j.jcrysgro.2023.127302

IF: 1.8

2023-01-01

Journal of Crystal Growth

Abstract:•Diamonds with B-NiS co-doped were synthesized under HPHT from FeNi-C system.•NiS or B-NiS doping makes the V-shaped region of diamond shift to upper right.•When B-NiS is co-doped, boron makes progressively CS and CN in the diamond more.
Defect transformations in nitrogen-doped CVD diamond during irradiation and annealing

A.M. Zaitsev,K.S. Moe,W. Wang

DOI: https://doi.org/10.1016/j.diamond.2018.07.017

IF: 3.806

2018-09-01

Diamond and Related Materials

Abstract:Nitrogen-doped CVD diamond treated with electron irradiation and subsequent annealing at temperatures from 860 to 1900 °C was studied using fluorescence imaging, optical absorption and photoluminescence. It was found that nitrogen impurity produces many optical centers active throughout the infrared and visible spectral ranges. The most prominent of them active in IR spectral range are the centers related to nitrogen–hydrogen complexes. They produce absorption lines at 2827, 2874, 2906, 2949, 2990, 3031, 3107, 3123 and 3310 cm−1. Two characteristic absorptions at wavenumbers 1293 cm−1 and 1341 cm−1 were tentatively ascribed to a modified form of nitrogen A-aggregates. In the visible and near IR spectral ranges, characteristic nitrogen-related centers have zero-phonon lines (ZPLs) at 457, 462, 489, 498, 722.5, 852.5, 865.5, 868.5, 908, 921.5 and 924.5 nm. Some of them, e.g. 457, 462 and 498 nm centers, are unique of CVD diamond. It has been confirmed that the brightest pink color of electron-irradiated nitrogen-doped CVD diamond is produced by annealing at temperatures about 1000 °C. Annealing at temperatures over 1600 °C destroys the irradiation-induced pink color. It was found that the center 489 nm is a major absorption feature in the visible spectral range of electron-irradiated, nitrogen-doped CVD diamond. Green color of electron-irradiated, nitrogen-doped CVD diamond is caused by combined absorption of GR1 center and 489 nm center. It has been confirmed that NV defects produced in CVD diamond during growth are very temperature stable. They survive heating at temperatures at least 2000 °C. In contrast, NV defects produced by irradiation may anneal out at temperatures as low as 1600 °C. This much lower thermal stability of the radiation-induced NV defects is the result of their interaction with other radiation defects produced in their vicinity. A conclusion has been made that in nitrogen-doped CVD diamonds nitrogen atoms may form clusters. These clusters are probably the origin of the broad band luminescence at wavelengths 360, 390, 535 and 720 nm and a strong broadening of ZPLs of many optical centers.
Effects of B-NiS co-doping on diamonds growing along {111}-orientation under high pressure and high temperature

Jiaxi Chen,Shangsheng Li,Qiang Hu,Yue You,Meihua Hu,Taichao Su,Mengzhao Wang,Xubiao Zhou,Guofeng Huang,Zhanchang Li,Yong Li,Hongyu Xiao

DOI: https://doi.org/10.1016/j.jcrysgro.2023.127302

IF: 1.8

2023-01-01

Journal of Crystal Growth

Abstract:Large single diamonds were successfully synthesized from NiS or B-NiS co-doping FeNi-C system under high pressure and high temperature (HPHT) in this paper. In this study, the effects of different additive amounts of NiS doping alone or B-NiS co-doping on the crystal shape, color and quality of diamond were investigated. The color of NiS doped diamonds change from bright yellow to bright green and then to grayish yellow. The color of B-NiS co-doped diamonds change from yellowish green to grayish green and black. Besides, the shape of doped crystals gradually changes from plate to tower. Fourier transform infrared (FTIR) spectra shows that with the increase of additive NiS content, the entry of nitrogen is suppressed to some extent by the entry of S into the diamond lattice, while with B-NiS co-doping, the content of nitrogen impurities increase with the increase of B content. It can be found from the x-ray photoelectron spectroscopy (XPS) results that the obtained diamonds contain B/S/N elements, with S present in the diamond lattice in the form of C-S-O. Raman measurements show that with increasing B content, the peak positions of co-doped diamonds are shifted and the full width at half maximum (FWHM) become slightly larger, but still have a high quality sp3 structure. This study not only contributes to the investigation of the formation mechanism of natural diamond, but also has important implications for the enrichment of diamond species and the expansion of synthetic diamond applications.
Micro-Raman scattering and photoluminescence study of boron-doped diamond films

Yuguang Wang,Hongdong Li,Yanyun Xiong,Shulin Zhang,Zhangda Lin,Kean Feng

DOI: https://doi.org/10.1016/S0925-9635(00)00302-2

IF: 3.806

2000-01-01

Diamond and Related Materials

Abstract:Micro-Raman scattering and photoluminescence spectra are implemented to investigate the characteristics of heavily boron-doped polycrystalline and homoepitaxial diamond films. Large differences on peak position and peak shape are observed between different growth sectors, the shift of the one-phonon diamond Raman peak is the largest in homoepitaxial (111) growth sector. These differences are due to different boron doping ratios in different growth sectors, the (111) growth sector contains more boron than the (100) growth sector. Fano-type interference appears in all spectra, the interference intensity increases with the increase of boron incorporation density. Upon boron doping, some luminescence emission bands due to nitrogen and silicon are quenched, the reason for this phenomena is the dramatic reduction of vacancies upon the incorporation of boron acceptors.
Luminescence Landscapes of Nitrogen-Vacancy Centers in Diamond: Quasi-Localized Vibrational Resonances and Selective Coupling

Zhicheng Su,Zeyang Ren,Yitian Bao,Xiangzhou Lao,Jinfeng Zhang,Jincheng Zhang,Deliang Zhu,Youming Lu,Yue Hao,Shijie Xu

DOI: https://doi.org/10.1039/c9tc01954e

IF: 6.4

2019-01-01

Journal of Materials Chemistry C

Abstract:77 K micro-photoluminescence spectrum, room-temperature near-field photoluminescence image, and a local atomic arrangement of the nitrogen-vacancy (NV) center in diamond.
Characterization of Nitrogen Doped Chemical Vapor Deposited Single Crystal Diamond Before and after High Pressure, High Temperature Annealing

Sj Charles,Je Butler,Bn Feygelson,Me Newton,Dl Carroll,Jw Steeds,H Darwish,Cs Yan,Hk Mao,Rj Hemley

DOI: https://doi.org/10.1002/pssa.200405175

2004-01-01

Abstract:A 820 micron thick single crystal diamond layer epitaxially grown on a single crystal diamond seed (high pressure, high temperature grown synthetic) by microwave plasma chemical vapor deposition with added nitrogen is characterized by an array of analytical techniques before and after annealing the material at high pressures and temperatures. The most striking result is the conversion of the initially dark colored, highly absorbing CVD layer to clear, transparent material after a 1 hour anneal at 7 GPa and 2200 degreesC. IR absorption in the region of the CH stretching modes, 2800 to 3107 cm(-1) shows a remarkable sharpening and persistence of the observed modes. IR absorption in the one-phonon region also indicates the presence of significant concentrations of ionized single substitutional nitrogen in the as grown material. EPR indicates a concentration of neutral single substitutional nitrogen at lattice sites of ca. I ppm, and this changes by less then 30% when annealed at temperatures up to 2200 degreesC. EPR also detects 0.1 ppm of the negatively charged nitrogen-vacancy-hydrogen complex in the as grown diamond, but this anneals out by 1900 degreesC, the negatively charged nitrogen-vacancy complex is below the EPR detection limit in these samples of about 0.1 ppm. Photoluminescence detects the presence of neutral and negatively charged nitrogen-vacancy complexes in the as grown material, and the formation of new, unassigned bands principally in the 800 to 900 nm region. The total detected nitrogen concentration in the sample is ca. 1.5 ppm. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Synthesis and characterization of boron and nitrogen co-doped diamond crystals under high pressure and high temperature conditions (vol 19, pg 4571, 2017)

Meihua Hu,Ning Bi,Shangsheng Li,Taichao Su,Qiang Hu,Hongan Ma,Xiaopeng Jia

DOI: https://doi.org/10.1039/c7ce90129a

IF: 3.756

2017-01-01

CrystEngComm

Abstract:In this study, diamond crystals co-doped with boron and nitrogen were synthesized via a temperature gradient method at 5.3-5.8 GPa and 1300-1550 C by adding B and N dopants to a system of carbon and an Fe-based solvent catalyst. The obtained co-doped diamond crystals were characterized via optical microscopy (OM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), and Raman spectroscopy. Our results indicated that the obtained B/N-co-doped diamond crystals were green in color and nearly transparent. The surface characteristics were different for the (100) and (111) crystal faces. In the B/N-co-doped diamonds, B, C, and N combined with each other and formed stable chemical bonds. The nitrogen concentration of the co-doped diamond crystals was much higher than that of the single doped crystals, and the form of nitrogen atoms was also different. The Raman characteristic peak of the co-doped diamond crystals almost did not shift as compared to that of the undoped or single doped crystals.
Investigating Non-Equilibrium Carrier Lifetimes In Nitrogen-Doped And Boron-Doped Single Crystal Hpht Diamonds With An Optical Method

Yan Song,B. D. Peng,G. Z. Song,Z. Q. Yue,B. K. Li,J. M. Ma,L. Sheng,B. J. Duan,Hongxing Wang

DOI: https://doi.org/10.1063/1.5019587

IF: 4

2018-01-01

Applied Physics Letters

Abstract:Non-equilibrium carrier lifetimes in nitrogen-doped and boron-doped single crystal HPHT diamonds have been investigated using a non-destructive optical method. In this method, a fiber was used to send a probe beam into the double-side polished sample and collect the interference beams reflected from the front and rear surfaces for directly measuring the refractive index change with a spatial resolution of about 10 mu m. Carrier lifetimes at several points in each sample have been investigated, whose relationships with the impurity concentrations have been analyzed. The nitrogen impurity can effectively reduce the carrier lifetime. Fast and slow carrier recombination components have been found in the boron-doped sample, which are caused by the deep traps and the compensated boron impurity, respectively. This investigation method can also provide a scheme for estimating the impurity concentration in diamond with a high spatial resolution. Published by AIP Publishing.
Structural, Raman and photoluminescence studies on nanocrystalline diamond films: Effects of ammonia in feedstock

K. Ganesan,P. K. Ajikumar,S.K.Srivatava,P. Magudapathy

DOI: https://doi.org/10.1016/j.diamond.2020.107872

2020-06-04

Abstract:Herein, we report on the improvement of structural quality and enhancement of photoluminescence (PL) emission for an optimally N doped nanocrystalline diamond (NCD) film. Pure and N doped nanocrystalline diamond films are synthesized on Si by hot filament chemical vapour deposition using NH3:CH4:H2 at different nominal N/C ratios viz. 0, 0.13, 0.35, 0.50 and 0.75 in feedstock. X ray diffraction analysis reveal a systematic initial increase and then a decrease in crystallite size with N/C ratio in feedstock. Further, a monotonic increase in Raman line width and peak position of diamond band indicates that the compressive strain in diamond lattice increases as a function of N/C ratio upto 0.50. However, at higher N/C ratio of 0.75, the compressive strain gets relaxed a little and produces a lower strain. Furthermore, a unique Raman mode at 1195 cm-1 is observed corresponding to the C=N-H vibrations indicating a significant N concentration in the NCD films. In addition, visible and UV PL studies reveal the presence of several N related color centres with multiple emission lines in the range of 380 to 700 nm. An optimally N doped diamond film grown at N/C ratio of 0.35 in feedstock shows a significant enhancement in room temperature PL emission at about 505 and 700 nm. This PL enhancement is attributed to H3 and other aggregates of N related defect centres, under 355 and 532 nm laser excitations respectively.

Materials Science,Applied Physics
Structure and Photoluminescence of Boron and Nitrogen Co-Doped Carbon Nanorods

B. B. Wang,B. Gao,X. X. Zhong,R. W. Shao,K. Zheng

DOI: https://doi.org/10.1016/j.mseb.2016.03.008

2016-01-01

Abstract:Boron and nitrogen doped carbon nanorods (BNCNRs) were synthesized by plasma-enhanced hot filament chemical vapor deposition, where methane, nitrogen and hydrogen were used as the reaction gases and boron carbide was the boron source. The results of scanning electron microscopy, micro-Raman spectroscopy, transmission electron microscopy and X-ray photoelectron spectroscopy indicate that boron and nitrogen can be used as co-dopants in amorphous carbon nanorods. Combined with the characterization results, the doping mechanism was studied. The mechanism is used to explain the formation of different carbon materials by different methods. The photoluminescence (PL) properties of BNCNRs were studied. The PL results show that the BNCNRs generate strong green PL bands and weak blue PL bands, and the PL intensity lowered due to the doping of boron. The outcomes advance our knowledge on the synthesis and optical properties of carbon-based nanomaterials and contribute to the development of optoelectronic nanodevices based on nano-carbon mateirals. (C) 2016 Elsevier B.V. All rights reserved.
Photoluminescence decomposition analysis: a technique to characterize NV creation in diamond

Scott Alsid,John Barry,Linh Pham,Jennifer Schloss,Michael O'Keefe,Paola Cappellaro,Danielle Braje

DOI: https://doi.org/10.1103/PhysRevApplied.12.044003

2019-06-27

Abstract:Treatment of lab-grown diamond by electron irradiation and annealing has enabled quantum sensors based on negatively-charged nitrogen-vacancy (NV$^\text{-}$) centers to demonstrate record sensitivities. \cite{Clevenson2015,Wolf2015,Barry2016,Chatzidrosos2017}. Here we investigate the irradiation and annealing process applied to 28 diamond samples using a new ambient-temperature, all-optical approach. As the presence of the neutrally-charged nitrogen-vacancy (NV$^\text{0}$) center is deleterious to sensor performance, this photoluminescence decomposition analysis (PDA) is first employed to determine the concentration ratio of NV$^\text{-}$ to NV$^0$ in diamond samples from the measured photoluminescence spectrum. The analysis hinges on (i) isolating each NV charge state's emission spectrum and (ii) measuring the NV$^\text{-}$ to NV$^0$ emission ratio, which is found to be 2.5$\pm$0.5 under low-intensity 532 nm illumination. Using the PDA method, we measure the effects of irradiation and annealing on conversion of substitutional nitrogen to NV centers. Combining these measurements with a phenomenological model for diamond irradiation and annealing, we extract an estimated monovacancy creation rate of $0.52\pm 0.26$ cm$^{\text{-1}}$ for 1 MeV electron irradiation and an estimated monovacancy diffusion coefficient of 1.8 nm$^2$/s at 850~$^\circ$C. Finally we find that irradiation doses $\gtrsim 10^{18}$ e$^\text{-}$/cm$^2$ deteriorate the NV$^\text{-}$ decoherence time $T_2$ whereas $T_1$ is unaffected up to the the maximum investigated dose of $5\times 10^{18}$ e$^\text{-}$/cm$^2$.

Mesoscale and Nanoscale Physics,Quantum Physics
Electrical and Photoconductive Properties of Boron-Doped Potycrystalline Diamond Films

Zhang Wenjun,Hu Bo,Xie Erqin,Zhang Yafei,Han Li,Song Zhizhong,Chen Guanghua

DOI: https://doi.org/10.1557/jmr.1995.2350

1995-01-01

Abstract:The current-voltage (I-V) characteristics and time-dependence photoconductivity of the undoped and B-doped diamond films (DF's) before and after annealing were investigated. The boron and hydrogen concentration in diamond films were measured by means of nuclear reaction analysis (NRA) and the elastic-recoil detection (ERD) technique, respectively. The results show that induced boron atoms and hydrogen atoms affect the electrical and photocoaductive properties of diamond films. During the annealing process, B concentration kept even, but H content decreased. For undoped diamond films, the escaping of H atoms has great effects on the electrical characteristics, but for B-doped samples, this effect decreases with the increase of B concentration.
Can surface-transfer doping and UV irradiation during annealing improve shallow implanted Nitrogen-Vacancy centers in diamond?

N. J. Glaser,G. Braunbeck,O. Bienek,I. D. Sharp,F. Reinhard

DOI: https://doi.org/10.1063/5.0012375

2020-07-30

Abstract:It has been reported that conversion yield and coherence time of ion-implanted NV centers improve if the Fermi level is raised or lowered during the annealing step following implantation. Here we investigate whether surface transfer doping and surface charging, by UV light, can be harnessed to induce this effect. We analyze the coherence times and the yield of NV centers created by ion implantation and annealing, applying various conditions during annealing. Specifically, we study coating the diamond with nickel, palladium or aluminum oxide, to induce positive surface transfer doping, as well as annealing under UV illumination to trigger vacancy charging. The metal coated diamonds display a two times higher formation yield than the other samples. The coherence time $T_2$ varies by less than a factor of two between the investigated samples. Both effects are weaker than previous reports, suggesting that stronger modifications of the band structure are necessary to find a pronounced effect. UV irradiation has no effect on yield and $T_2$ times.

Materials Science
Nanocone Structures Enhancing Nitrogen-Vacancy Center Emissions in Diamonds

Tianfei Zhu,Yan Liang,Zongchen Liu,Jiao Fu,Yanfeng Wang,Guoqing Shao,Dan Zhao,Juan Wang,Ruozheng Wang,Qiang Wei,Wei Wang,Feng Wen,Tai Min,Hongxing Wang

DOI: https://doi.org/10.3390/coatings10060513

IF: 3.236

2020-01-01

Coatings

Abstract:In this study, nitrogen-vacancy center emissions from nanocone structures fabricated on diamond surfaces by gold film annealing and inductively coupled plasma etching techniques were characterized. First, the diamond substate deposited with gold film was annealed to form a nano-sized dot mask. Second, through inductively coupled plasma etching, nanocone-shaped structures were fabricated using optimized gold dots as masks. Finally, the as-fabricated nanocone and planar structures were investigated with photoluminescence experiments at temperatures ranging from room temperature to 80 K, with the results showing approximately two-fold higher emission values for nitrogen-vacancy centers from nanocones.

Photoluminescence Study of N-rich B-doped Diamonds Grown in NiMnCo Solvent Before and after Annealing

Nitrogen vacancy luminescence and their phonon sidebands characteristics in nitrogen-doped diamond

Photoluminescence Studies of the Charge States of Nitrogen Vacancy Centers in Diamond after Arsenic Ion Implantation and Subsequent Annealing

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Generation of Nitrogen-Vacancy Color Center in Nanodiamonds by High Temperature Annealing

Effects of High Pressure and High Temperature Annealing on the Characteristics of HPHT Diamonds with High Nitrogen Content

Adjustable charge states of nitrogen-vacancy centers in low-nitrogen diamond after electron irradiation and subsequent annealing

Effects of B-NiS Co-Doping on Diamonds Growing along {1 1 1}-Orientation under High Pressure and High Temperature

Defect transformations in nitrogen-doped CVD diamond during irradiation and annealing

Effects of B-NiS co-doping on diamonds growing along {111}-orientation under high pressure and high temperature

Micro-Raman scattering and photoluminescence study of boron-doped diamond films

Luminescence Landscapes of Nitrogen-Vacancy Centers in Diamond: Quasi-Localized Vibrational Resonances and Selective Coupling

Characterization of Nitrogen Doped Chemical Vapor Deposited Single Crystal Diamond Before and after High Pressure, High Temperature Annealing

Synthesis and characterization of boron and nitrogen co-doped diamond crystals under high pressure and high temperature conditions (vol 19, pg 4571, 2017)

Investigating Non-Equilibrium Carrier Lifetimes In Nitrogen-Doped And Boron-Doped Single Crystal Hpht Diamonds With An Optical Method

Structural, Raman and photoluminescence studies on nanocrystalline diamond films: Effects of ammonia in feedstock

Structure and Photoluminescence of Boron and Nitrogen Co-Doped Carbon Nanorods

Photoluminescence decomposition analysis: a technique to characterize NV creation in diamond

Electrical and Photoconductive Properties of Boron-Doped Potycrystalline Diamond Films

Can surface-transfer doping and UV irradiation during annealing improve shallow implanted Nitrogen-Vacancy centers in diamond?

Nanocone Structures Enhancing Nitrogen-Vacancy Center Emissions in Diamonds