A Gauge Theory for Two-Band Model of Chern Insulators and Induced Topological Defects

Zhi-Wen Chang,Wei-Chang Hao,Xin Liu
DOI: https://doi.org/10.1088/1572-9494/ac381e
2021-01-01
Communications in Theoretical Physics
Abstract:In this paper a gauge theory is proposed for the two-band model of Chern insulators. Based on the so-called't Hooft monopole model, a U(1) Maxwell electromagnetic sub-field is constructed from an SU(2) gauge field, from which arise two types of topological defects, monopoles and merons. We focus on the topological number in the Hall conductance sigma(xy)=e(2)/hC, where C is the Chern number. It is discovered that in the monopole case C is indeterminate, while in the meron case C takes different values, due to a varying on-site energy m. As a typical example, we apply this method to the square lattice and compute the winding numbers (topological charges) of the defects; the C-evaluations we obtain reproduce the results of the usual literature. Furthermore, based on the gauge theory we propose a new model to obtain the high Chern numbers vertical bar C vertical bar = 2, 4.
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