Highly thermally stable Cr 3+ and Yb 3+ codoped Gd 2 GaSbO 7 phosphors for broadband near-infrared applications

Xiudi Wu,Shuang Zhao,Liang Zhang,Langping Dong,Yonghui Xu,Shuwen Yin,Hongpeng You

DOI: https://doi.org/10.1039/d1dt02259h

IF: 4

2021-01-01

Dalton Transactions

Abstract:Gd 2 GaSbO 7 :Cr 3+ ,Yb 3+ phosphors with efficient broadband NIR emission were prepared by a solid-state reaction.

chemistry, inorganic & nuclear

What problem does this paper attempt to address?

Thermally stable broadband near-infrared emitting pyrochlore oxide phosphors codoped with Cr 3+ and Yb 3+ ions

Chaoyue Peng,Lifang Yuan,Geng Chen,Haoyi Wu,Yahong Jin

DOI: https://doi.org/10.1016/j.ceramint.2023.12.063

IF: 5.532

2024-01-03

Ceramics International

Abstract:The advance of portable and smart near-infrared (NIR) light sources has sparked significant interest. However, achieving high-performance NIR emission at longer wavelengths remains a formidable challenge. In this study, we prepared broadband NIR phosphors by codoping pyrochlore oxide Y 2 GaSbO 7 (YGSO) with Cr 3+ and Yb 3+ ions using a conventional high-temperature solid-state reaction. Upon excitation by blue light, YGSO: 0.03Cr 3+ exhibited a broadband NIR emission centered at 765 nm with a full width at half maximum (FWHM) of 160 nm. The purposeful incorporation of Yb 3+ ions facilitated efficient energy transfer from Cr 3+ to Yb 3+ , resulting in a newly observed NIR emission peak at 970 nm. Notably, the addition of Yb 3+ improved the overall thermal quenching resistance owing to its inherent thermal stability. Furthermore, we encapsulated the as-obtained phosphors with commercial blue LED chips to create prototype phosphor-converted light-emitting diodes (pc-LEDs). The Cr 3+ and Cr 3+ -Yb 3+ codoped pc-LEDs achieved output powers of 120 mW@660 mA with a photoelectric conversion efficiency of 12.66%@30 mA, and 131.7 mW@1020 mA with a photoelectric conversion efficiency of 13.93%@30 mA, respectively. These broadband NIR pc-LEDs hold promise for optical imaging applications.

materials science, ceramics
Preparation of Gd2O2S:Er3+,Yb3+ phosphor and its multi-wavelength sensitive upconversion luminescence mechanism

wei fan,xiyan zhang,lixin chen,liping lu

DOI: https://doi.org/10.1039/c4ce02243b

IF: 3.756

2015-01-01

CrystEngComm

Abstract:Er3+-Yb3+ codoped Gd2O2S infrared upconversion phosphor has been prepared via a coprecipitation-solid state reaction process. The composition ratio and calcining conditions have been optimized by orthogonal experiments. X-ray diffraction (XRD) and structure refinement were performed to analyze the phase composition and the changes of cell parameters. Intense characteristic emissions of Er3+ ions were observed when excited with CW laser radiation at 980 nm, 1064 nm and 1550 nm, which show that the obtained samples possess the outstanding advantage of application generality in the infrared detection field. The upconversion luminescence mechanisms excited at different wavelengths were discussed by means of the intensity-power test.
Thermally Stable NIR Broad Emission of Cr3+ Doping Phosphor With a High NIR Output Power

Zhishan Chen,Shaoan Zhang,Zhenzhang Li,Huacong Ye,Haoran Yan,Jialong Xu,Ling Gao,Yang Li,Shizhen Zhang

DOI: https://doi.org/10.1039/d4qi01728e

IF: 7.779

2024-08-25

Inorganic Chemistry Frontiers

Abstract:The development of high-performance near-infrared (NIR) luminescent materials remains a significant challenge, particularly in enhancing thermal stability. Herein, we observed an anti-thermal quenching effect in the YGa 1.5 Al 1.5 (BO 3 ) 4 :Cr 3+ phosphor, with its emission intensity reaching 104% at 423 K and 101% at 483 K compared to room temperature. This anti-thermal quenching is mainly attributed to thermal-induced emission compensation resulting from excited electrons trapped at crystal defects, as confirmed by density functional theory computation. Additionally, YGa 1.5 Al 1.5 (BO 3 ) 4 :Cr 3+ exhibits a broad NIR emission peaking at 750 nm with a full width at half maximum of 135 nm and a high photoluminescence quantum yield (86%). As a proof-of-concept, we fabricated an NIR phosphor-converted light-emitting diode device that achieves an NIR output power of 59.67 mW with an input working current of 150 mA, demonstrating a photoelectric conversion efficiency of 13.6%. The utilization of this high-power NIR light-emitting diode device as a lighting source enables a penetration depth of up to 15 mm, demonstrating the potential applications of Cr 3+ -doped YGa 1.5 Al 1.5 (BO 3 ) 4 :Cr 3+ phosphors for non-invasive detection of biological tissue.

chemistry, inorganic & nuclear
Achieving broadband near-infrared emission with superior anti-thermal quenching by optimizing the excited-state population of Cr3+ in Gd3ScGa4O12 garnet phosphors

Wangyu Liu,Lifang Yuan,Haoyi Wu,Huafeng Dong,Yahong Jin

DOI: https://doi.org/10.1039/d4mh01157k

2024-10-07

Abstract:Cr3+-activated garnet phosphors with broadband near-infrared (NIR) emission have attracted considerable interest due to their high quantum efficiency (QE) and thermal stability for widespread advanced applications. Nevertheless, how to achieve energy-saving broadband NIR phosphors that possess anti-thermal quenching (anti-TQ) without compromising the high QE has yet to be fully addressed. Herein, we report on site reconstruction within the garnet lattice by strategically positioning Sc and Ga atoms into octahedral B sites with a mole ratio of 1 : 1 to produce Gd3ScGa4O12. A reduction in crystal field strength (CFS) is thus induced, leading to a redshift of Cr3+ broadband NIR emission. The inherent rigidity of the structure and the weak electron-phonon coupling (EPC) effect lay the groundwork for a thermally robust broadband NIR phosphor. The combination of bandgap engineering, finely optimizing the 4T2 excited state population, and precise control over the doping concentration contributes a high-performance broadband NIR emission (IQE = 82.75%) with unprecedented anti-TQ such that the NIR emission of Cr3+ even increases to 198% of its room-temperature intensity at 543 K. A prototype broadband NIR pc-LED is encapsulated to deliver an NIR output power of 125.20 mW@900 mA and a wall-plug efficiency (WPE) of 6.88%@30 mA, enabling night vision, noninvasive imaging, and non-destructive detection applications.
Broadening and enhancing emission of Cr3+ simultaneously by co-doping Yb3+ in Ga1.4In0.6SnO5

Shuang Zhao,Zhongfei Mu,Lulu Lou,Shuwen Yuan,Min Liao,Qiuming Lin,Daoyun Zhu,Fugen Wu

DOI: https://doi.org/10.1016/j.jre.2022.10.012

IF: 4.632

2022-10-01

Journal of Rare Earths

Abstract:Cr3+ doped broadband near-infrared (NIR) emitting phosphors are currently the focus of research. Researchers have developed a variety of strategies to achieve broad and strong NIR emission. However, it is a conundrum to simultaneously broaden and enhance the emission of Cr3+ with a single strategy. In this work, we solved this problem by co-doping Yb3+. Under 452 nm excitation, Ga1.4In0.6SnO5 (GISO): 0.01Cr3+ shows ultrabroadband NIR emission covering 650–1300 nm with a peak of 884 nm. The full width half maximum (FWHM) of the emission is 215 nm and the internal quantum yield (IQY) is 25%. This indicates that the double sites occupation strategy is favorable to achieve ultra-broadband NIR emission. The co-doping of Yb3+ can effectively broaden and enhance the emission of Cr3+. The FWHM for GISO: 0.01Cr3+, 0.002Yb3+ extends to 245 nm, and the IQY increases to 28%. Further increasing the concentration of Yb3+ to 0.005, the IQY is lifted to 32%. Finally, a pc-LED was prepared by integrating the GISO: 0.01Cr3+, 0.002Yb3+ with a blue light chip. Under the current drive of 40 mA, the maximum output power of pc-LED is 4.54 mW, and the photoelectric conversion efficiency is 4.12%. These results indicate that Yb3+ ions can simultaneously broaden the emission band and improve the emission efficiency. This work provides an effective strategy for the design of efficient broadband NIR phosphors in the future.

chemistry, applied
An efficient and thermally stable Cr 3+ -activated Y 2 GdSc 2 Al 2 GaO 12 garnet phosphor for NIR spectroscopy applications

Jihuan Xie,Junhang Tian,Lipeng Jiang,Min Cao,Weidong Zhuang

DOI: https://doi.org/10.1039/d3dt02481d

IF: 4

2023-10-17

Dalton Transactions

Abstract:Near-infrared (NIR) spectroscopy realized by an NIR phosphor-converted light-emitting diode (pc-LED) as a light source has aroused considerable interest due to its numerous merits and widespread application scenarios. Nevertheless, developing NIR emitting phosphors with high performance is still the top priority. Here, we report a new Y 2 GdSc 2 Al 2 GaO 12 :Cr 3+ (YGSAG:Cr 3+ ) garnet phosphor, which demonstrates a broadband emission peaking at 754 nm with a full width at half maximum (FWHM) of around 120 nm in the range of 650–1200 nm. The YGSAG:0.08Cr 3+ sample irradiated by blue light exhibits the most intense emission intensity, leading to a high absorption efficiency of 49.54%. In addition, compared with room temperature, the integrated PL intensity of the sample can still be maintained at 90.97% at 423 K. Benefitting from the outstanding optical properties, the as-manufactured NIR pc-LED device driven by a 100 mA current represents a high NIR output power of 35.14 mW and a photoelectric efficiency of 12.51%. These results verify that the as-synthesized YGSAG:Cr 3+ phosphor possesses great potential for the applications of NIR spectroscopy.

chemistry, inorganic & nuclear
A Novel Broadband NIR Phosphor Y2Mg2Ga2Si2O12: Cr3+ for NIR LED Applications

Shihao Wu,Heng Liang,Yan Li,Wanfang Zou,Zhijian Liao,Wei Wang,Xinyu Ye

DOI: https://doi.org/10.1039/d3dt00469d

IF: 4

2023-04-19

Dalton Transactions

Abstract:Cr3+-doped near-infrared (NIR) phosphors have been extensively investigated due to the promising applications in biomedicine, food safety detection and night vision surveillance. However, achieving broadband (FWHM > 160 nm) NIR...

chemistry, inorganic & nuclear
Enhancement of Near‐Infrared Phosphor Luminescence Properties via Construction of Stable and Compact Energy Transfer Paths

Guohui Wei,Zhijun Wang,Rui Li,Ye Wang,Jiehong Li,Yawei Shi,Shaoxuan He,Yuanbo Yang,Zhiping Yang,Panlai Li

DOI: https://doi.org/10.1002/adom.202201076

IF: 9

2022-07-01

Advanced Optical Materials

Abstract:GaTaO4:Cr3+,Yb3+ can produce broadband near‐infrared (NIR) light by aiding with efficient "S‐A‐S" energy transfer, and it presents the broad full width at half maximum of 300 nm, good thermal stability (90%@423 K), and excellent internal quantum efficiency/external quantum efficiency (95.5%/44.79%). The NIR phosphor‐converted light‐emitting diodes can be applied in the fields of the non‐destructive food detection, night vision, and vein display. The rapid development of near‐infrared (NIR) spectroscopy urgently requires the exploration of NIR‐emitting phosphors with excellent luminescence properties. Herein, GaTaO4:Cr3+,Yb3+ NIR phosphor with excellent luminescence properties is reported, which exhibits ultra‐broadband NIR emission with a full width at half maximum of 300 nm, good thermal stability of 90%@423 K, and most remarkably, high internal quantum efficiency of 95.5% and external quantum efficiency of 44.79%. Such outstanding luminescence properties mainly give the credit to the unique sandwiched structure of GaTaO4:Cr3+,Yb3+, in which layers of Yb3+ ions (activator) are sandwiched between layers of Cr3+ ions (sensitizer), and hence many stable and compact Cr–Yb pairs are formed, so that the energy can be rapidly transferred from Cr3+ to Yb3+, effectively activating the characteristic f–f transition of Yb3+ that is very stable and almost independent of the temperature, and at the same time, the non‐radiative transition of Cr3+ ions can be suppressed to a certain degree. The NIR phosphor‐converted light‐emitting diodes (pc‐LEDs) are fabricated by combining GaTaO4:Cr3+,Yb3+ with blue LED chips, and the application potential is fully demonstrated by non‐destructive food detection, night vision, and vein display. The results provide novel prospects for the design of NIR‐emitting materials with desirable luminescent properties.

materials science, multidisciplinary,optics
Ultra-Broadband and high efficiency Near-Infrared Gd3Zn Ga5-2Ge O12:Cr3+ (x = 0–2.0) garnet phosphors via crystal field engineering

Ye Wang,Zhijun Wang,Guohui Wei,Yuanbo Yang,Shaoxuan He,Jiehong Li,Yawei Shi,Rui Li,Jiawei Zhang,Panlai Li

DOI: https://doi.org/10.1016/j.cej.2022.135346

IF: 15.1

2022-06-01

Chemical Engineering Journal

Abstract:The rapid development of portable spectroscopic detectors has given rise to a great demand for small light sources, and near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) are preferred for their compactness and low cost, while phosphors used in NIR spectroscopy require broadband emission, high quantum yield and good absorption efficiency as well as the spectral range required to achieve detection. Inspired by the tunable structure of Gd3Ga5O12 (GGG), a series of broadband phosphors Gd3Zn x Ga5-2x Ge x O12:1.5%Cr3+ (x = 0–2.0) with continuously tunable emission in the long-wave direction were designed using Zn2+-Ge4+ instead of Ga3+-Ga3+ in GGG to modulate the crystal field environment of Cr3+. The crystal field intensity of the octahedra occupied by Cr3+ decreases with increasing co-substitution, and its full-width at half maximum (FWHM) from 105 nm to a maximum of 211 nm due to the change of local symmetry. In Gd3Zn0.8Ga3.4Ge0.8O12 (GZGG):5%Cr3+, the internal quantum yield (IQY) and external quantum yield (EQY) reaches 79.6% and 31.2% with impressive absorption efficiency (41.1%). The obtained phosphors were made into pc-LED with blue light chips, which was applied to glucose solution degree detection. The results show that the GZGG:Cr3+ will hopefully provide a new strategy for non-destructive testing.

engineering, chemical, environmental
Crystal Field-Engineered Cr3+-Doped Gd3(MgxGa5-2 xGex)O12 Phosphors for Near-Infrared LEDs and X-ray Imaging Applications

Tianlong Zeng,Ping Liu,Guoqiang Zeng,Xue Yu,Haozhe Liu,Xuanyu Zhu,Wenlong Huang,Guohao Wang,Lihui Hou,Mengyu Zhu,Yongzheng Fang,Ting Wang

DOI: https://doi.org/10.1021/acs.inorgchem.4c01417

2024-07-15

Abstract:Inorganic materials doped with chromium (Cr) ions generate remarkable and adjustable broadband near-infrared (NIR) light, offering promising applications in the fields of imaging and night vision technology. However, achieving high efficiency and thermal stability in these broadband NIR phosphors poses a significant challenge for their practical application. Here, we employ crystal field engineering to modulate the NIR characteristics of Cr3+-doped Gd3Ga5O12 (GGG). The Gd3MgxGa5-2xGexO12 (GMGG):7.5% Cr3+ (x = 0, 0.05, 0.15, 0.20, and 0.40) phosphors with NIR emission are developed through the cosubstitution of Mg2+ and Ge4+ for Ga3+ sites. This cosubstitution strategy also effectively reduces the crystal field strength around Cr3+ ions, which results in a significant enhancement of the photoluminescence (PL) full width at half-maximum (fwhm) from 97 to 165 nm, alongside a red shift in the PL peak and an enhancement of the PL intensity up to 2.3 times. Notably, the thermal stability of the PL behaviors is also improved. The developed phosphors demonstrate significant potential in biological tissue penetration and night vision, as well as an exceptional scintillation performance for NIR scintillator imaging. This research paves a new perspective on the development of high-performance NIR technology in light-emitting diodes (LEDs) and X-ray imaging applications.
Near-infrared photoluminescence and phosphorescence properties of Cr3+-Doped garnet-type Y3Sc2Ga3O12

Xian Yang,Weibin Chen,Dongsheng Wang,Xirong Chai,Gening Xie,Zhiguo Xia,Maxim S. Molokeev,Yingliang Liu,Bingfu Lei

DOI: https://doi.org/10.1016/j.jlumin.2020.117392

IF: 3.6

2020-09-01

Journal of Luminescence

Abstract:Garnet-type Y3Sc2Ga3O12:Cr3+ phosphor has been synthesized by a solid-state reaction. XRD result revealed the successful phase formation and Cr3+ doping in Y3Sc2Ga3O12. The excitation spectrum at about 260, 450, and 630 nm corresponded to three spin-allowed Cr3+ d-d intra-transitions of 4A2-4T1 (4P), 4A2-4T1 (4F), and 4A2-4T2 (4F), respectively, among which the near infrared (NIR) emission peak at around 740 nm is identified. Moreover, the phosphorescence emission property, thermoluminescence and related luminescence mechanisms are discussed as well. The fabricated NIR phosphor-converted light-emitting diodes (pc-LEDs) suggest its potential of Y3Sc2Ga3O12:Cr3+ phosphor for non-visible light source application.

optics
Luminescence properties and spectral modulation of the ultra-broadband, highly efficient near-infrared luminescent material CaGa4O7:Cr3+, Cr4+, Yb3+

Jian Zhang,Li Luo,Weiren Zhao,Wei Zhang,ZhengFa Hu

DOI: https://doi.org/10.1016/j.optmat.2022.113388

IF: 3.754

2023-01-01

Optical Materials

Abstract:Recently, near-infrared phosphors have received a lot of attention due to their wide application in the field of detection and analysis, and it is urgent to develop efficient broadband NIR phosphors. In this paper, a conventional high-temperature solid-phase method was used to prepare a novel near-infrared phosphor CaGa4O7:Cr3+, Cr4+, which provides two emission bands ranging from 600 to 1000 nm and 1100–1600 nm. Although there are only four and five coordination sites in the CaGa4O7 (CGO) lattice, the doping of the Cr3+ ions in the CGO causes the Ga–O tetrahedral distortion into an octahedron, providing a favorable environment for the emission of the Cr3+ ions. Under blue light excitation, Cr3+ emits luminescence in the NIR I region from 600 to 1000 nm with a half-height width of up to 148 nm. With increasing Cr ion concentration, more and more Cr4+ preferentially occupy the four coordinated Ga3+ sites, and the intensity of the ultra-broad emission band in the NIR II region (1100 nm–1600 nm) increases with a full width at half maximum (FWHM) of 262 nm. To further optimize the emission spectrum, Yb3+ was codoped into CGO: Cr3+, Cr4+, the energy transfers from Cr3+ to Yb3+ in CGO was found, thus filling the gap between 1000 and 1100 nm in the CGO emission spectrum and obtaining a more complete ultra-wide spectrum. Moreover, the luminescence mechanism, energy transfer efficiency, and quantum yield are also studied in detail, and the ability of CaGa4O7:Cr3+, Cr4+, and Yb3+ luminescent materials to achieve ultra-broadband efficient near-infrared emission was demonstrated.

materials science, multidisciplinary,optics
Broadband, Enhanced, and Antithermally Quenched Near-Infrared Phosphors via a Cosubstitution Approach

Qianrui Ma,Ting Wang,Wei Gao,Bitao Liu,Hao Zhang,Zhenzhen Cui,Haihong Guo,Liang Xiu,Shaoqing Wang,Ziyang Li,Longchao Guo,Siufung Yu,Xue Yu,Xuhui Xu,Jianbei Qiu

DOI: https://doi.org/10.1021/acs.inorgchem.1c01588

IF: 4.6

2021-07-20

Inorganic Chemistry

Abstract:Wearable biosensing and food safety inspection devices with high thermal stability, high brightness, and broad near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) could accelerate the next-generation NIR light applications. In this work, NIR La3–xGdxGa5GeO14:Cr3+ (x = 0 to 1.5) phosphors were successfully fabricated by a high-temperature solid-state method. Here, by doping Gd3+ ions into the La3+ sites in the La3Ga5GeO14 matrix, a 7.9-fold increase in the photoluminescence (PL) intensity of the Cr3+ ions, as well as a remarkably broadened full width at half-maximum (FWHM) of the corresponding PL spectra, is achieved. The enhancements in the PL, PLE intensity, and FWHM are attributed to the suppression of the nonradiative transition process of Cr3+ when Gd3+ ions are doped into the host, which can be demonstrated by the decay curves. Moreover, the La1.5Gd1.5Ga5GeO14:Cr3+ phosphor displays an abnormally negative thermal phenomenon that the integral PL intensity reaches 131% of the initial intensity when the ambient temperature increases to 160 °C. Finally, the broadband NIR pc-LED was fabricated based on the as-explored La1.5Gd1.5Ga5GeO14:Cr3+ phosphors combined with a 460 nm chip, and the potential applications for the broadband NIR pc-LEDs were discussed in detail.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.inorgchem.1c01588?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.inorgchem.1c01588</a>.Experimental details including the XRD phase information, PL and TL data of the fabricated phosphors, and the discussed applications (Figures S1–S6) (<a class="ext-link" href="/doi/suppl/10.1021/acs.inorgchem.1c01588/suppl_file/ic1c01588_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

chemistry, inorganic & nuclear
Broadband near infrared luminescent properties of Cr3+ activated SrGa2Si2O8 phosphor

Fengfeng Chi,Liangliang Pan,Bin Jiang,Xiuyun Zhang,Bo Zhang,Xianghong Niu,Shengli Liu,Xiantao Wei

DOI: https://doi.org/10.1016/j.jlumin.2023.120009

IF: 3.6

2023-11-01

Journal of Luminescence

Abstract:There has been a lot of interest in trivalent chromium ion-doped phosphors for near-infrared (NIR) luminescence in recent years. Here, trivalent chromium-doped NIR emitting SrGa2Si2O8 phosphors were synthesized. The electronic structure was calculated via density functional theory. Although only [SrO7], [SiO4], and [GaO4] polyhedra were found in the host, we still observe broadband luminescence of Cr3+ in the region of 650–950 nm from octahedra site. Due to the doping of Cr3+, a transformation from [GaO4] tetrahedron rearrange into [CrO6] octahedron was produced. The experimental results of X-ray photoelectron spectroscopy and electron paramagnetic resonance spectroscopy demonstrated the presence of Cr3+. A systematic study of the photoluminescence properties of SrGa2Si2O8:Cr3+ was conducted. The luminescent intensity of SrGa2Si2O8:0.005Cr3+ at 420 K can be retained at 83.42% compared to 300 K, indicating its high thermal stability. The electroluminescence of the prepared light emitting diode (LED) based on SrGa2Si2O8:Cr3+ and blue LED chip was measured under various currents. The application as a NIR LED light source was demonstrated in human hands.

optics
Efficient Broadband Near‐Infrared Emission in the GaTaO 4 :Cr 3+ Phosphor

Jiyou Zhong,Ya Zhuo,Fu Du,Hongshi Zhang,Weiren Zhao,Shihai You,Jakoah Brgoch

DOI: https://doi.org/10.1002/adom.202101800

IF: 9

2021-11-01

Advanced Optical Materials

Abstract:Efficient broadband near‐infrared (NIR) emitting materials with an emission peak centered above 830 nm are crucial for smart NIR spectroscopy‐based technologies. However, the development of these materials remains a significant challenge. Herein, a series of design rules rooted in computational methods and empirical crystal‐chemical analysis is applied to identify a new Cr3+‐substituted phosphor. The compound GaTaO4:Cr3+ emerged from this study is based on the material's high structural rigidity, suitable electronic environment, and relatively weak electron–phonon coupling. Irradiating this new phosphor with 460 nm blue light generates a broadband NIR emission (λem,max = 840 nm) covering the 700–1100 nm region of the electromagnetic spectrum with a full width at half maximum of 140 nm. The phase has a high internal quantum yield of 91% and excellent thermal stability, maintaining 85% of the room temperature emission intensity at 100 °C. Fabricating a phosphor‐converted light‐emitting diode device shows that the new compound generates an intense NIR emission (178 mW at 500 mA) with photoelectric efficiency of 6%. This work not only provides a new material that has the potential for next‐generation high‐power NIR applications but also highlights a set of design rules capable of developing highly efficient long‐wavelength broadband NIR materials. An efficient near‐infrared‐emitting phosphor GaTaO4:Cr3+ is discovered through a comprehensive analysis on the structural rigidity, electronic environment, formation of defects, and electron–phonon coupling by computational methods and empirical crystal‐chemical analysis. This material shows a broadband emission peaking at 840 nm with a quantum yield of 91% under 460 nm excitation, demonstrating its potential applications in NIR spectroscopy.

materials science, multidisciplinary,optics
Broadband Downconversion In Bi3+, Yb3+-Co-Doped Yvo4 Phosphor

Gui Cheng Jiang,Xiantao Wei,Yonghu Chen,Min Yin

DOI: https://doi.org/10.1166/jnn.2011.5231

2011-01-01

Journal of Nanoscience and Nanotechnology

Abstract:Yttrium vanadate phosphors co-doped with Bi3+ and Yb3+ ions have been prepared via the solid-state reaction. The phosphors were characterized by various methods including X-ray diffraction, photoluminescence excitation and photoluminescence spectra. Upon ultraviolet (UV) light excitation, an intense near-infrared (NIR) emission of Yb3+ corresponding to the transition of F-2(5/2) > F-2(7/2) peaking at 985 nm was observed as a result of energy transfer from O2--V5+ or Bi3+-V5+ charge transfer state (CTS) to Yb3+. A broad excitation band ranging from 250 to 375 nm was recorded when the Yb3+ emission was monitored, which suggests an efficient energy transfer from CTS to Yb3+ ions. The dependence of Yb3+ doping concentration on the visible emission, the NIR emission and decay lifetime has been investigated. The results of visible and NIR spectral evolution with temperature indicate that the mechanism for the NIR-emission is mainly phonon-assisted energy transfer at room temperature, while the mechanism is mainly cooperative energy transfer at low temperature. The YVO4:Bi3+, Yb3+ phosphor has prospects for realizing high efficiency crystalline Si solar cells by converting broadband UV energy into NIR light.
Broadband NIR Garnet Phosphors with Improved Thermal Stability via Energy Transfer

Yan Liu,Shuai He,Dan Wu,Xiaoling Dong,Wenping Zhou

DOI: https://doi.org/10.1021/acsaelm.1c01029

IF: 4.494

2022-01-21

ACS Applied Electronic Materials

Abstract:Near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) have attracted more and more attention because of their many potential optical applications. However, high-performance broadband NIR phosphors are still rare. Here, we demonstrated that Cr3+-to-Yb3+ energy transfer (ET) is an effective strategy to boost the properties of NIR luminescence materials in Ca2LaZr2Ga2.8Al0.2O12: Cr3+,Yb3+ (CZGG: Cr3+, Yb3+). In addition to the enrichment of short-wave NIR emission in 900–1100 nm, the overall thermal stability of CZGG: Cr3+, Yb3+ can be improved by leveraging high-efficiency ET from Cr3+ to Yb3+, ascribed to the fast ET from Cr3+ to its nearest Yb3+ as well as the superior thermal stability of Yb3+. Additionally, an NIR pc-LED device was packaged via combining CZGG: Cr3+, Yb3+ with a blue LED chip to demonstrate its possible application in compact nonvisible light sources.

materials science, multidisciplinary,engineering, electrical & electronic
La3Ga5SiO14:Cr3+: A broadband near-infrared phosphor induced by the two-site occupation of Cr3+

Honglei Yuan,Yanzhi Bai,Gaoliang Wang,Liuyang Xu,Huanxia Jia,Xianke Sun

DOI: https://doi.org/10.1016/j.ceramint.2023.02.093

IF: 5.532

2023-06-01

Ceramics International

Abstract:The broadband near-infrared phosphors are feasible to apply in real-time nondestructive examination. In this work, La3Ga5SiO14:Cr3+ phosphors with the broadband near-infrared emission have been synthesized using a solid state reaction method. Their optical characteristics were investigated via the measurements of ultraviolet–visible diffused reflectance and luminescence spectra. The occupations of Cr3+ ions in La3Ga5SiO14 host were inquired by the X-ray absorption near edge structure and electron paramagnetic resonance analyses. The results indicate that Cr3+ ions substitute octahedral and tetrahedral Ga3+ ions in La3Ga5SiO14 host, which results in a sharp emission band coming from the 2Eg → 4A2g transitions of Cr3+ and a wide emission band coming from the 4T2g → 4A2g transitions of Cr3+. The fabricated NIR pc-LED device by combining the synthesized La3Ga5SiO14:0.10Cr3+ phosphor with a blue LED chip indicates that the La3Ga5SiO14:Cr3+ phosphors have potential applications in nondestructive examination.

materials science, ceramics
Enhanced energy transfer and near-infrared luminescence by crystal field regulation in Zn3Ga2GeO8: Cr3+, Yb3+

Jian Yang,Chenglong Xie,Lei Zhao

DOI: https://doi.org/10.1039/d4dt02243b

IF: 4

2024-09-19

Dalton Transactions

Abstract:Near-infrared (NIR)-emitting phosphors with broadband absorption from ultraviolet to visible light have been considered significant spectral convert materials for solar cells. In this work, the NIR phosphors Zn3Ga2GeO8 (ZGGO): Cr3+, Yb3+ spinel solid solution were synthesized by classical high-temperature solid-state method. With increased of the doping concentration of the Cr3+ ions in ZGGO: Cr3+, Yb3+, more distorted octahedron appears around Cr3+ ions, which can be increased the crystal field splitting. This process was accompanied by a broadening of the NIR emission from Cr3+ 4T2→4A2 transition, and enlarge the overlap area between the absorption spectrum of Yb3+ and the emission spectrum of Cr3+, which resulting in efficient energy transfer occurred between Cr3+ and Yb3+. In the case of high-concentration doping of Cr3+, the near-infrared luminescence intensity of Yb3+ was more than 8 times that of low-concentration doped Cr3+. There is reason to believe that Cr3+, Yb3+ co-doped ZGGO phosphor is a potential spectral converter for silicon-based solar cells, thereby improving photovoltaic conversion efficiency.

chemistry, inorganic & nuclear
Broadband near‐infrared (NIR) emitting Cr3+‐doped La3Ga5SnO14 phosphor with long persistent and photostimulated persistent luminescence

Zhiyu Hu,Yayin Zhang,Zijun Li,Weirui Chen,Zhan Du,Bo Wang

DOI: https://doi.org/10.1002/bio.4674

IF: 2.613

2024-01-16

Luminescence

Abstract:Upon excitation with UV/blue light, the sample exhibited strong emission bands in the range 600–1200 nm peaking at 937 nm. In addition, efficient infrared laser‐promoted photostimulated luminescence implies potential application in optical storage. Recently, long persistent phosphors (LPPs) have attracted significant attention as promising candidates for biomedical applications. However, the serious decrease in luminescence intensity in tissue still remains a major challenge. Therefore, exploring more competitive LPPs and achieving reproducible tissue imaging is crucial. In this study, a new series of near‐infrared (NIR) phosphors La3Ga5Sn1‐xO14:xCr3+ (x = 0.005–0.05) were synthesized using a high‐temperature solid‐state method. The as‐synthesized samples were characterized using X‐ray diffraction, diffuse/photoluminescence spectroscopy, fluorescence decay curves, and thermoluminescence spectroscopy. Upon excitation with ultraviolet light, strong emission bands were observed in the range 600–1200 nm with an optimal doping concentration of x = 0.02 mol. Moreover, La3Ga5SnO14:Cr3+ exhibits persistent luminescence due to the presence of suitable energy traps, which prompted the phosphor to emit NIR light even after the removal of the excitation source.

chemistry, analytical

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