Error Resilience and Recovery of Process Induced Stuck-at Faults in MLP Neural Networks Using Emerging Technology

An Qi Zhang,Amr M. S. Tosson,Lan Wei
DOI: https://doi.org/10.1109/nanoarch53687.2021.9642243
2021-01-01
Abstract:With the end of Moore’s law, emerging technologies and materials that offer greater performance than silicon are gaining interest, such as alternative low dimensional channel materials (LDMs) including Carbon Nanotube FETs (CNFETs) and so on. Although LDM transistors offer higher performance due to better electrostatic control and/or higher mobilities than their silicon counterpart, their fabrication processes are immature and suffer greatly from defects and variations, leading to high chances of stuck-at faults. Unlike general-purpose applications intolerable to high fault rates, applications with approximate components in their algorithm such as neuromorphic networks and machine learning are inherently error resilient. Meanwhile, such applications are computation-heavy and can benefit from the reduced power and improved performance that emerging technologies offer. This work analyses the effect of stuck-at faults in the SRAM cells of the NeuroSim Multi-Layer Perceptron (MLP) under various fault patterns, and presents fault recovery techniques to improve the re-trained accuracy against high stuckat fault rates to assess the applicability of emerging technologies to machine learning applications. With the proper selection of a recovery technique, the system can tolerate a high level of stuckat faults, which means emerging technologies can be useful even at the early stage of technology development with an immature process.
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