A 2d Heterostructure‐Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing
Jiajia Zha,Yunpeng Xia,Shuhui Shi,Haoxin Huang,Siyuan Li,Chen Qian,Huide Wang,Peng Yang,Zhuomin Zhang,You Meng,Wei Wang,Zhengbao Yang,Hongyu Yu,Johnny C. Ho,Zhongrui Wang,Chaoliang Tan
DOI: https://doi.org/10.1002/adma.202308502
IF: 29.4
2023-10-22
Advanced Materials
Abstract:The demand for economical and efficient data processing has led to a surge of interest in neuromorphic computing based on emerging two‐dimensional (2D) materials in recent years. As a rising van der Waals (vdW) p‐type Weyl semiconductor with many intriguing properties, tellurium has been widely used in advanced electronics/optoelectronics. However, its application in floating gate memory devices for information processing has never been explored. Herein, we report an electronic/optoelectronic floating gate memory device enabled by tellurium‐based 2D vdW heterostructure for multimodal reservoir computing. When subjected to intense electrical/optical stimuli, our device exhibits impressive nonvolatile electronic memory behaviors including ∼108 extinction ratio, ∼100‐ns switching speed, >4000 cycles, >4000‐s retention stability, and nonvolatile multi‐bit optoelectronic programmable characteristics. When the input stimuli weaken, the nonvolatile memory degrades into volatile memory. Leveraging these rich nonlinear dynamics, we demonstrate a multimodal reservoir computing system with high recognition accuracy of 90.77% for event‐type multimodal handwritten digit‐recognition. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology