Abstract:Intelligent edge devices are vital in the IoT era when massive data needs to be processed locally for privacy protections. The intelligence always comes with extensive computation and data movement power. In-memory computing (IMC) [1]–[6] has been regarded as a promising route to enable energy-efficient computing in a power constraint platform. Besides, re-training or fine-tuning a part of the neural networks is an effective method to adapt case-by-case variations in edge and protect users’ privacies. Unlike inference, the training phase needs to access the transpose of the weight matrices, as shown in Fig. 1. Very few works have been reported on transpose IMC macros [3], where the current-domain feed-forward (FF) and back-propagation (BP) IMC are supported, and a small offset sense amplifier (SA) is proposed to improve the sensing margin. However, the current-domain computing always suffers from the transistor-variation issue [7]. To mitigate transistor-variation-induced errors and improve the robustness of transpose IMC macros, we present a charge-domain transposable IMC architecture, which supports both the in-memory FF and the BP multiplication-and-accumulation (MAC) computing in the same memory. 6T bit-cells combined with a local charge-based computing unit (CCU) are adopted to improve storage density, where both the FF and the BP computing are realized in the charge domain. Besides, the macro can be reconfigured to execute XNOR or AND, offering great flexibilities to cover binary neural networks (NNs) and multi-bit operations through serially 1-bit operations.

A 16kb Transpose 6T SRAM In-Memory-Computing Macro Based on Robust Charge-Domain Computing

A 28 Nm 16 Kb Bit-Scalable Charge-Domain Transpose 6T SRAM In-Memory Computing Macro

A Local Transpose 9T SRAM Compute-In-Memory Macro with Programmable Single-Slope SAR ADC

A 128 Kb DAC-less 6T SRAM computing-in-memory macro with prioritized subranging ADC for AI edge applications

A 28nm 8Kb Reconfigurable SRAM Computing-In-Memory Macro With Input-Sparsity Optimized DTC for Multi-mode MAC Operations

A 9T-SRAM In-Memory Computing Macro for Boolean Logic and Multiply-and-accumulate Operations

An XOR-10T SRAM computing-in-memory macro with current MAC operations and time-to-digital conversion for BNN edge processors

A 28nm 32kb SRAM Computing-in-Memory Macro with Hierarchical Capacity Attenuator and Input Sparsity-Optimized ADC for 4b Mac Operation

A Reconfigurable SRAM Computing-in-Memory Macro Supporting Ping-Pong Operation and CIM Pipeline for Multi-mode MAC Operations

Transposable 9T-SRAM Computation-In-Memory for on-Chip Learning With Probability-Based Single-Slope SAR Hybrid ADC for Edge Devices

A 65nm 8b-Activation 8b-Weight SRAM-Based Charge-Domain Computing-in-Memory Macro Using A Fully-Parallel Analog Adder Network and A Single-ADC Interface

SRAM-Based In-Memory Computing Macro Featuring Voltage-Mode Accumulator and Row-by-Row ADC for Processing Neural Networks

A 1-16b Reconfigurable 80Kb 7T SRAM-Based Digital Near-Memory Computing Macro for Processing Neural Networks

TD-SRAM: Time-Domain-Based In-Memory Computing Macro for Binary Neural Networks

A 28nm 2Mb STT-MRAM Computing-in-Memory Macro with a Refined Bit-Cell and 22.4 - 41.5TOPS/W for AI Inference.

A 28-Nm RRAM Computing-in-Memory Macro Using Weighted Hybrid 2T1R Cell Array and Reference Subtracting Sense Amplifier for AI Edge Inference

A Reconfigurable 4T2R ReRAM Computing In-Memory Macro for Efficient Edge Applications

33.4 A 28nm 2Mb STT-MRAM Computing-in-Memory Macro with a Refined Bit-Cell and 22.4 - 41.5TOPS/W for AI Inference

A Computing-in-Memory SRAM Macro Based on Fully-Capacitive-Coupling With Hierarchical Capacity Attenuator for 4-b MAC Operation

A Local Computing Cell and 6T SRAM-Based Computing-in-Memory Macro With 8-b MAC Operation for Edge AI Chips

A Dual-Split 6T SRAM-Based Computing-in-Memory Unit-Macro With Fully Parallel Product-Sum Operation for Binarized DNN Edge Processors