Interstitial Sn-doping Promotes Electrocatalytic CO 2 -to-formate Conversion on Bismuth
Xin Xu,Yang Wei,Linhua Mi,Guodong Pan,Yajun He,Siting Cai,Chaoyang Zheng,Yaming Jiang,Bin Chen,Liuyi Li,Shenghong Zhong,Jianfeng Huang,Wenbin Hu,Yan Yu
DOI: https://doi.org/10.1007/s40843-023-2495-7
2023-01-01
Science China Materials
Abstract:Electrochemical CO 2 reduction (CO 2 RR) is a promising technology to mitigate the greenhouse effect and convert CO 2 to value-added chemicals. Yet, achieving high catalytic activity, selectivity, and stability for target products is still a big challenge. Herein, interstitially Sn-doped Bi (Sn x -Bi, x is the atomic ratio of Sn to Bi, x = 1/2, 1/16, 1/24 or 1/40) nanowire bundles (NBs) are prepared by reducing Sn-doped Bi 2 S 3 . Notably, Sn 1/24 -Bi NBs exhibit ultrahigh formate selectivity over a broad potential window of 1400 mV (Faradaic efficiency over 90% from −0.5 to −1.9 V vs. reversible hydrogen electrode (RHE)) with an industry-compatible current density of −319 mA cm −2 at −1.9 V vs. RHE. Moreover, superior long-term stability for more than 84 h at ∼−200 mA cm −2 is realized. Experimental results and density functional theory (DFT) calculations reveal that interstitially doped Sn optimizes the adsorption affinity of *OCHO intermediate and reduces the electron transfer energy barrier of bismuth catalyst, resulting in the remarkable CO 2 RR performance. This study provides valuable inspiration for the design of doped electrocatalysts with enhanced catalytic activity, selectivity, and durability for electrochemical CO 2 -to-formate conversion.