Abstract:In this study, we investigated the effects of etching temperature on the characteristics of the recessed-anode AlGaN/GaN Schottky barrier diodes (SBDs). Although recessed-anode AlGaN/GaN SBDs etched at room temperature (RT), 100°C, and 180°C exhibited similar turn-on voltage ( V on ) and reverse current ( I R ), the uniformity of the devices under turn-on voltage and reverse current was improved with an increase in etching temperature. The mean-square errors of V on for devices etched at RT, 100°C, and 180°C were 0.062, 0.022, and 0.012 V, respectively, and those of log ( I R ) were 0.38, 0.29, and 0.10, respectively. Meanwhile, the uniformity of the ideality factor and Schottky barrier height for the devices etched at higher temperatures were better than that of the devices etched at RT. This is because high temperature helps to repair the etching damage and also helps to volatilize etching remains.

Effects of Etching Temperature on the Characteristics of Recessed-Anode AlGaN/GaN Schottky Barrier Diodes