Improved Intrinsic Emission Efficiency and Photocatalysis of Nb2WO8 by Li+-doping

Yanlin Huang,Ju Bai,Guitao Zhou,Hyo Jin Seo
DOI: https://doi.org/10.1016/j.jallcom.2021.160679
IF: 6.2
2021-01-01
Journal of Alloys and Compounds
Abstract:Transition metal oxide semiconductors have been reported to be potential for light-energy conversion and storage-related applications because of the unique structures and properties. This work reports a transition metal oxide Nb2WO8 synthesized by the sol-gel synthesis. The crystal structure, optical band nature, intrinsic luminescence, and photocatalytic properties were investigated. Nb2WO8 is a typical indirect allowed semiconductor and the band transition energy is 3.58 eV. The top of the valence band (EVB) and the minimum of the conduction band (ECB) are +2.88 eV and & minus;0.7 eV, respectively. Nb2WO8 presents an intrinsic emission at 300 K with the maximum wavelength at 510 nm and the lifetime was 1.96 mu s. The introduction of the impurity ions Li+ into the lattices of Nb2WO8 resulted in the improved luminescence efficiency. Meanwhile, compared with the undoped sample, the luminescence thermal stability of Nb2WO8:Li was also enhanced. The decay lifetime of Nb2WO8:Li was prolonged to 2.41 mu s. The slow decay time could delay the recombination of the photo-produced holes and electrons after light excitation. This improves photocatalytic performances by delaying the charge-separation. Therefore, the photodegradation of RhB by Nb2WO8:Li is much more efficient than that by the reference sample of Nb2WO8 under visible light irradiation. Li+ doping is an effective way to modify the optical properties of Nb2WO8 semiconductor. (c) 2021 Elsevier B.V. All rights reserved.
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