Piezoelectric Effect Enhanced Flexible UV Photodetector Based on Ga2O3/ZnO Heterojunction

H. Wang,J. Ma,L. Cong,H. Zhou,P. Li,L. Fei,B. Li,H. Xu,Y. Liu
DOI: https://doi.org/10.1016/j.mtphys.2021.100464
IF: 11.021
2021-01-01
Materials Today Physics
Abstract:Piezoelectric effect has been used to modulate the transport, separation and recombination of carriers in semiconductors and consequently optimize the performance of various optoelectronic devices such as photodetectors and solar cells. In this paper, a flexible metal-semiconductor-metal (MSM) structure ultraviolet (UV) photodetector (PD) is fabricated by depositing c-axis oriented polycrystalline ZnO layer and amorphous Ga2O3 (a-Ga2O3) layer on PET substrate. The responsivity to 254 nm light can be increased 3.8 times and the response time decreases 43% by applying a tensile strain of 0.57% on the flexible detector. The improvement of the a-Ga2O3/ZnO heterojunction photodetector is explained in terms of the strain-induced modulation of the barrier height and the band offset at the Au/a-Ga2O3 interface and a-Ga2O3/ZnO interface. This work could be great value for the design and fabrication of piezoelectric effect enhanced flexible optoeletronic devices. (C) 2021 Published by Elsevier Ltd.
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