Oxidized Eutectic Gallium–indium (egain) Nanoparticles for Broadband Light Response in a Graphene-Based Photodetector

Pengfei Wang,Qianqian Hu,Bocheng Lv,Yu Liu,Jun Yin,Jialin Sun

DOI: https://doi.org/10.1039/d1ma00318f

2021-01-01

Materials Advances

Abstract:Oxidized EGaIn nanoparticles on suspended graphene achieve photodetection with improvement in responsivity by three orders of magnitude from ultraviolet to near infrared light.

What problem does this paper attempt to address?

Enhanced Performance of a Graphene/gaas Self-Driven Near-Infrared Photodetector with Upconversion Nanoparticles.

Jianghong Wu,Zhenwei Yang,Caiyu Qiu,Yuejiao Zhang,Zhiqian Wu,Jingliang Yang,Yanghua Lu,Jianfeng Li,Dongxiao Yang,Ran Hao,Erping Li,Geliang Yu,Shisheng Lin

DOI: https://doi.org/10.1039/c8nr00594j

IF: 6.7

2018-01-01

Nanoscale

Abstract:Near-infrared photodetectors (NIRPDs) have attracted great attention because of their wide range of applications in many fields. Herein, a novel self-driven NIRPD at the wavelength of 980 nm is reported based on the graphene/GaAs heterostructure. Extraordinarily, its sensitivity to light illumination (980 nm) is far beyond the absorption limitation of GaAs (874 nm). This means that the photocurrent originates from the separation of photo-induced carriers in graphene, which is caused by the vertically built-in electric field formed through the high quality van der Waals contact between graphene and GaAs. Moreover, after introducing NaYF4:Yb3+/Er3+ upconversion nanoparticles (UCNPs) onto the graphene/GaAs heterojunction, the responsivity increases to be as superior as 5.97 mA W-1 and the corresponding detectivity is 1.1 × 1011 cm Hz0.5 W-1 under self-driven conditions. This dramatic improvement is mainly ascribed to the radiative energy transfer from UCNPs to the graphene/GaAs heterostructure. The high-quality and self-driven UCNPs/graphene/GaAs heterostructure NIRPD holds significant potential for practical application in low-consumption and large-scale optoelectronic devices.
A synergetic enhancement of localized surface plasmon resonance and photo-induced effect for graphene/GaAs photodetector.

Jianghong Wu,Caiyu Qiu,Sirui Feng,Tianyi Yao,Yanfei Yan,Shisheng Lin

DOI: https://doi.org/10.1088/1361-6528/ab5a08

IF: 3.5

2020-01-01

Nanotechnology

Abstract:Photodetectors based on graphene/GaAs heterostructure were fabricated and demonstrated for application in self-powered photodetection. Then, Si quantum dots (QDs) were spin-coated onto the surface of the devices to enhance the built-in field by photo-induced doping, because of the tunable Fermi level (E-F) of graphene and shallow junction of the heterojunction. Additionally, Au nanoparticles working as a light trapping structure were used to the enhance quantum efficiency of the Si QDs and the optical absorption of the heterojunction, benefitting from localized surface plasmon resonance. Therefore, a large-area photodetector under self-powered conditions achieved a high performance i.e. responsivity (1.81 x 10(5) V W-1), detectivity (2.0 x 10(12) Jones), fast response speed (<0.04 ms), and on-off ratio (6 x 10(3)). The high voltage responsivity opens a promising pathway to ultra-weak light detection, and facilities the development of novel sensors.
Facile Fabrication of Eutectic Gallium-Indium Alloy Nanostructure and Application in Photodetection.

Peng-Fei Wang,Qianqian Hu,Bocheng Lv,Jia-Lin Zhu,Wanyun Ma,Zhanmin Dong,Jinquan Wei,Jia-Lin Sun

DOI: https://doi.org/10.1088/1361-6528/ab61d0

IF: 3.5

2020-01-01

Nanotechnology

Abstract:Eutectic gallium-indium (EGaIn) alloy is a kind of liquid metal and has attracted much attention due to good properties. In order to satisfy the trend of miniaturization and realize more practical applications, the exploration for preparation method and properties of EGaIn at nanoscale are very important. Here, facile vacuum thermal evaporation method is developed to fabricate EGaIn nanostructures. The EGaIn nanoparticle and nanofilm with naturally formed 5 nm thick oxide layers are well prepared. The oxide film formed on the EGaIn surface is an important factor, making the properties of the nanostructure different from the properties of the bulk. Compared with ignorance of oxide layer in bulk materials, the proportion of oxide layer increases evidently in nanostructures, which produce obvious influence on the electric and optical properties. The rectifying characteristic and optoelectronic performance are experimentally observed. The EGaIn nanostructures can generate evident photocurrent responses with good responsivities (similar to 1 mA W-1) and response speed (similar to 1 s) under irradiation of 206 nm, 405 nm, 532 nm, 635 nm, 808 nm, 1064 nm and 10.6 mu m lasers. These properties are completely different from the metallic properties of EGaIn bulk material.
High-responsivity Graphene/inas Nanowire Heterojunction Near-Infrared Photodetectors with Distinct Photocurrent On/off Ratios.

Jinshui Miao,Weida Hu,Nan Guo,Zhenyu Lu,Xingqiang Liu,Lei Liao,Pingping Chen,Tao Jiang,Shiwei Wu,Johnny C Ho,Lin Wang,Xiaoshuang Chen,Wei Lu

DOI: https://doi.org/10.1002/smll.201402312

IF: 13.3

2014-01-01

Small

Abstract:Graphene is a promising candidate material for high-speed and ultra-broadband photodetectors. However, graphene-based photodetectors suffer from low photoreponsivity and I(light)/I(dark) ratios due to their negligible-gap nature and small optical absorption. Here, a new type of graphene/InAs nanowire (NW) vertically stacked heterojunction infrared photodetector is reported, with a large photoresponsivity of 0.5 AW(-1) and I(light)/I(dark) ratio of 5 × 10(2), while the photoresponsivity and I(light)/I(dark) ratio of graphene infrared photodetectors are 0.1 mAW(-1) and 1, respectively. The Fermi level (E(F)) of graphene can be widely tuned by the gate voltage owing to its 2D nature. As a result, the back-gated bias can modulate the Schottky barrier (SB) height at the interface between graphene and InAs NWs. Simulations further demonstrate the rectification behavior of graphene/InAs NW heterojunctions and the tunable SB controls charge transport across the vertically stacked heterostructure. The results address key challenges for graphene-based infrared detectors, and are promising for the development of graphene electronic and optoelectronic applications.
ZnO Quantum Dot-Doped Graphene/h-Bn/gan-heterostructure Ultraviolet Photodetector with Extremely High Responsivity.

Yanghua Lu,Zhiqian Wu,Wenli Xu,Shisheng Lin

DOI: https://doi.org/10.1088/0957-4484/27/48/48lt03

IF: 3.5

2016-01-01

Nanotechnology

Abstract:A ZnO quantum dot. photo-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity of more than 1915 AW(-1) and detectivity of more than 1.02 x 10(13) Jones (Jones = cm Hz(1/2) W-1) has been demonstrated. The interfaced h-BN layer increases the barrier height at the graphene/GaN heterojunction, which decreases the dark current and improves the on/off current ratio of the device. The photo-doping effect increases the barrier height and carrier concentration at the graphene/h-BN/GaN heterojunction, thus the responsivity is improved from 1473 AW(-1) to 1915 AW(-1) and the detectivity is improved from 5.8 x 10(12) to 1.0 x 10(13) Jones. Moreover, all of the responsivity and detectivity values are the highest values among all the graphene-based ultraviolet photodetectors.
High-performance broadband graphene/silicon/graphene photodetectors: From x-ray to near-infrared

Xinyu Liu,Hao Ning,Jianhang Lv,Lixiang Liu,Li Peng,Feng Tian,Srikrishna Chanakya Bodepudi,Xiaochen Wang,Xiaoxue Cao,Yunfan Dong,Wenzhang Fang,Shaoxiong Wu,Huan Hu,Bin Yu,Yang Xu

DOI: https://doi.org/10.1063/5.0132028

IF: 4

2023-02-15

Applied Physics Letters

Abstract:Applied Physics Letters, Volume 122, Issue 7, February 2023. Metal–semiconductor–metal (MSM) structures have been widely used and extensively investigated for ultraviolet (UV) detection. However, traditional MSM structures suffer from large dark currents, narrow detection bands, and low collection efficiency. Optimizing these properties for broadband detection in MSM structures is essential for improving the performance and functionality in broader optoelectronics applications. We report a high-performance broadband graphene/thin silicon/graphene photodetector by realizing a synergistic combination of graphene and silicon absorption bandwidths from the x-ray to near-infrared regions. The sensitivity of the proposed photodetector in this spectral range is greatly enhanced. A high responsivity of 0.56 A/W, a high detectivity of 2.72 × 1011 Jones, and a fast response time of 7.2 ns are achieved. Moreover, the real-time array imaging at broadband regions presented in this study can benefit from the independent pixel structures similar to the complementary-metal-oxide-semiconductor (CMOS) architecture. This approach constitutes a reliable route toward a high-performance photodetector with prominent broad-spectrum response, high responsivity, and low noise. These results will motivate strategies to achieve high-performance, broadband image sensors, compatible for on-chip CMOS circuit technology that advances the development of next-generation graphene/silicon image sensors.

physics, applied
Graphene photodetectors with ultra-broadband and high responsivity at room temperature

Chang-Hua Liu,You-Chia Chang,Theodore B Norris,Zhaohui Zhong

DOI: https://doi.org/10.1038/nnano.2014.31

Abstract:The ability to detect light over a broad spectral range is central to several technological applications in imaging, sensing, spectroscopy and communication. Graphene is a promising candidate material for ultra-broadband photodetectors, as its absorption spectrum covers the entire ultraviolet to far-infrared range. However, the responsivity of graphene-based photodetectors has so far been limited to tens of mA W(-1) (refs 5-10) due to the small optical absorption of a monolayer of carbon atoms. Integration of colloidal quantum dots in the light absorption layer can improve the responsivity of graphene photodetectors to ∼ 1 × 10(7) A W(-1) (ref. 11), but the spectral range of photodetection is reduced because light absorption occurs in the quantum dots. Here, we report an ultra-broadband photodetector design based on a graphene double-layer heterostructure. The detector is a phototransistor consisting of a pair of stacked graphene monolayers (top layer, gate; bottom layer, channel) separated by a thin tunnel barrier. Under optical illumination, photoexcited hot carriers generated in the top layer tunnel into the bottom layer, leading to a charge build-up on the gate and a strong photogating effect on the channel conductance. The devices demonstrated room-temperature photodetection from the visible to the mid-infrared range, with mid-infrared responsivity higher than 1 A W(-1), as required by most applications. These results address key challenges for broadband infrared detectors, and are promising for the development of graphene-based hot-carrier optoelectronic applications.
Photogating-controlled ZnO Photodetector Response for Visible to Near-Infrared Light.

Yang Wang,Fang Zhong,Hailu Wang,Hao Huang,Qing Li,Jiafu Ye,Meng Peng,Ting He,Yunfeng Chen,Yueming Wang,Lili Zhang,He Zhu,Xianying Wang

DOI: https://doi.org/10.1088/1361-6528/ab8e75

IF: 3.5

2020-01-01

Nanotechnology

Abstract:In recent years, as a direct wide band gap semiconductor, zinc oxide (ZnO) nanomaterial has attracted a lot of attention. However, the widely investigated ZnO materials are strongly limited in fast-response and broadband photodetectors due to their inherent weaknesses, so an effective structure or mechanism of ZnO nanostructure photodetector is greatly needed. In this work, a photogating-controlled photodetector based on a ZnO nanosheet-HfO2-lightly doped Si architecture is demonstrated. Its performance was significantly improved by the photogating-controlled local field at the Si and HfO2 interfaces compared to the findings in other published works on ZnO. Consequently, the photodetector not only effectively balances the responsivity (as high as 5.6 A W-1) and response time (400 µs), but also broadens the wavelength response of the ZnO-based photodetectors from visible to near-infrared light range (~1200 nm). Additionally, the photogating-controlled ZnO photodetector enables high-resolution imaging both in the visible and near-infrared bands. Our photogating-controlled ZnO photodetectors not only exemplify the controllability of the gate electrode in high mobility materials but also provide a basis for the development of fast speed and high responsivity detection of high mobility materials.
Planar Carbon Nanotube-Graphene Hybrid Films For High-Performance Broadband Photodetectors

Yuanda Liu,Fengqiu Wang,Xiaomu Wang,Xizhang Wang,Emmanuel Flahaut,Xiaolong Liu,Yao Li,Xinran Wang,Yongbing Xu,Yi Shi,Rong Zhang

DOI: https://doi.org/10.1038/ncomms9589

IF: 16.6

2015-01-01

Nature Communications

Abstract:Graphene has emerged as a promising material for photonic applications fuelled by its superior electronic and optical properties. However, the photoresponsivity is limited by the low absorption cross-section and ultrafast recombination rates of photoexcited carriers. Here we demonstrate a photoconductive gain of similar to 10(5) electrons per photon in a carbon nanotube-graphene hybrid due to efficient photocarriers generation and transport within the nanostructure. A broadband photodetector (covering 400-1,550 nm) based on such hybrid films is fabricated with a high photoresponsivity of >100 AW(-1) and a fast response time of similar to 100 mu s. The combination of ultra-broad bandwidth, high responsivities and fast operating speeds affords new opportunities for facile and scalable fabrication of all-carbon optoelectronic devices.
Superionic Modulation of Polymethylmethacrylate-Assisted Suspended Few-Layer Graphene Nanocomposites for High-Performance Photodetectors.

Jun Yin,Lin Cong,Yu Liu,Pengfei Wang,Wanyun Ma,Jia-Lin Zhu,Kaili Jiang,Wei Zhang,Jia-Lin Sun

DOI: https://doi.org/10.1021/acsami.8b21055

IF: 9.5

2019-01-01

ACS Applied Materials & Interfaces

Abstract:Graphene is receiving significant attention for use in optoelectronic devices because it exhibits a wide range of desirable electrical properties. Although modified graphene that is fabricated on quantum dots (or similar integration strategies) has shown promise, it has not met the requirements for high-speed applications and highly sensitive detection. Herein, we report ion-modulated graphene composite nanostructures that were incorporated into photodetectors. We focus on the dynamical properties of the novel photodetectors, and they exhibit extraordinary photoelectric performances (photoresponsivity ∼1 A/W, response time ∼100 μs) over a broad range of wavelengths from 405 to 1064 nm (the maximum external quantum efficiency is greater than 300% at 635 nm with a 10 kHz chopping frequency). A theoretical model is proposed in this paper, and it is in good agreement with our experimental results. The dynamic analyses further confirmed the dissociation and recombination of ion-electron bound states to be responsible for the fast and sensitive photoresponse from the composite samples. Although ion-modulated optoelectronic nanomaterials are rarely studied, they require further exploration as they offer new insights and alternatives in nanomaterial research.
Graphene–PbS Quantum Dot Heterostructure for Broadband Photodetector with Enhanced Sensitivity

Jincheng Qing,Shicai Wang,Shuyi Gu,Lin Lin,Qinpei Xie,Daming Li,Wen Huang,Junxiong Guo

DOI: https://doi.org/10.3390/s24175508

IF: 3.9

2024-08-28

Sensors

Abstract:Photodetectors converting light into electrical signals are crucial in various applications. The pursuit of high-performance photodetectors with high sensitivity and broad spectral range simultaneously has always been challenging in conventional semiconductor materials. Graphene, with its zero bandgap and high electron mobility, is an attractive candidate, but its low light absorption coefficient restricts its practical application in light detection. Integrating graphene with light-absorbing materials like PbS quantum dots (QDs) can potentially enhance its photodetection capabilities. Here, this work presents a broadband photodetector with enhanced sensitivity based on a graphene–PbS QD heterostructure. The device leverages the high carrier mobility of graphene and the strong light absorption of PbS QDs, achieving a wide detection range from ultraviolet to near-infrared. Employing a simple spinning method, the heterostructure demonstrates ultrahigh responsivity up to the order of 107 A/W and a specific detectivity on the order of 1013 Jones, showcasing significant potential for photoelectric applications.

engineering, electrical & electronic,chemistry, analytical,instruments & instrumentation
Broadband surface plasmon resonance enhanced self-powered graphene/GaAs photodetector with ultrahigh detectivity

Yanghua Lu,Sirui Feng,Zhiqian Wu,Yixiao Gao,Jingliang Yang,Yuejiao Zhang,Zhenzhen Hao,Jianfeng Li,Erping Li,Hongsheng Chen,Shisheng Lin

DOI: https://doi.org/10.1016/j.nanoen.2018.02.056

IF: 17.6

2018-01-01

Nano Energy

Abstract:A type of broadband (325−980 nm) self-powered photodetector based on graphene/GaAs van der Waals heterojunction is reported. By simply spinning a layer of Ag nano-particles (Ag NPs) onto graphene/GaAs heterostructure, the responsivity and detectivity of our devices for the whole spectrum range are enhanced significantly. The maximum photocurrent responsivity of 210 mA W−1 (increased by 38%) and detectivity of 2.98 × 1013 Jones (increased by 202%) are achieved at 405 nm, which is about two or three orders of magnitude larger than other graphene based self-powered photodetectors. The mechanism of the improvement originates from the overlap the depletion region of graphene/GaAs heterostructure, the surface plasmon enhanced light field region below the surface and the light absorption region of the GaAs layer. The external quantum efficiency (EQE) measurement, transient photoluminescence (PL) test and the comparative theoretical simulation show that the surface plasmon enhancement should only be applicable for graphene/direct band gap semiconductor heterostructure, where the semiconductor should have a high optical absorption coefficient. The obtained high performance broadband photodetector with excellent detectivity is a promising candidate for many important optoelectronic applications, such as ultrasensitive image sensor in charge coupled displayer field, which requires colour sensors not only with high photo responsivity but also in a wide spectral range.
Multicolor Broadband and Fast Photodetector Based on InGaAs–Insulator–Graphene Hybrid Heterostructure

Gaoqi Cao,Fang Wang,Meng Peng,Xiumei Shao,Bo Yang,Weida Hu,Xue Li,Jing Chen,Yabin Shan,Peisong Wu,Laigui Hu,Ran Liu,Haimei Gong,Chunxiao Cong,Zhi-Jun Qiu

DOI: https://doi.org/10.1002/aelm.201901007

IF: 6.2

2020-01-01

Advanced Electronic Materials

Abstract:Broadband light detection is crucial for a variety of optoelectronic applications in modern society. As an important-near infrared (NIR) photodetector, InGaAs PIN photodiodes demonstrate high detection performance. However, they have a limited response range because of optical absorption by the window layer or substrate. To exploit the broadband absorption capability of narrow-bandgap InGaAs, a phototransistor based on a hybrid InGaAs-SiO2-graphene heterostructure is presented. In this system, graphene serves as a transparent conducting channel to sense optical absorption in the InGaAs. In contrast to InGaAs PIN photodiodes, the hybrid InGaAs phototransistor demonstrates multicolor photodetection over a broadband wavelength range from the ultraviolet to NIR. Furthermore, it manifests a high photoresponsivity of above 10(3) A W-1 under weak light irradiation, a large external quantum efficiency, and a fast response speed of 200 kHz. The results pave the way for the development of high-performance broadband photodetectors based on mixed-dimensional heterostructures.
Amorphous Gallium Oxide Nanosheets with Broad Absorption and Spin Polarization for Si‐Based UV‒Vis‒NIR Photodetectors

Junling Yu,Geng Wu,Xiao Han,Peigen Liu,Su You,Qing Yang,Xun Hong

DOI: https://doi.org/10.1002/adom.202302410

IF: 9

2024-02-15

Advanced Optical Materials

Abstract:Amorphous gallium oxide nanosheets (a‐GaOx NSs) feature with broad absorption and spin polarization is synthesized, which is conducive to broad absorption and the suppression of photogenerated carrier recombination, assembled with graphene and p‐Si, realizing UV‒vis‒NIR photodetection. Achieving broad light absorption and high carrier separation efficiency is crucial for wide‐bandgap semiconductors to enable broadband photodetection applications. Here, amorphous gallium oxide nanosheets feature with broad absorption and spin polarization Wis synthesized, and assembled with graphene and p‐Si, realizing UV‒vis‒NIR photodetection. Extended X‐ray absorption fine structure reveals that a‐GaOx NSs possess lower tetrahedral Ga occupation (10%) compared to crystalline β‐Ga2O3 (50%). UV‒vis‒NIR diffuse reflectance spectra and magnetic hysteresis loops demonstrate broad absorption and weak ferromagnetism of a‐GaOx NSs, respectively. Density functional theory calculation further reveals sub‐gap states and spin polarization in a‐GaOx NSs. Moreover, combined with Mott–Schottky curves, photoluminescence and time‐resolved photoluminescence spectra inferred the effective suppression of carrier recombination via spin polarization of a‐GaOx NSs. The graphene/a‐GaOx NSs/p‐Si photodetector incorporates a back‐to‐back rectifying junction, acquiring a dark current as low as 63 pA. All photogenerated carriers are in the depletion region of the photodetector favouring efficient charge separation. This photodetector exhibits a response time of τrise<60 ms and τfall<120 ms, and high specific detectivity 1013 Jones over 254–1064 nm light.

materials science, multidisciplinary,optics
Photodetectors: A Broadband Fluorographene Photodetector (Adv. Mater. 22/2017)

Sichao Du,Wei Lu,Ayaz Ali,Pei Zhao,Khurram Shehzad,Hongwei Guo,Lingling Ma,Xuemei Liu,Xiaodong Pi,Peng Wang,Hehai Fang,Zhen Xu,Chao Gao,Yaping Dan,Ping-Heng Tan,Hongtao Wang,Cheng-Te Lin,Jianyi Yang,Shurong Dong,Zhiyuan Cheng,Er-Ping Li,Wen-Yan Yin,Jikui Luo,Bin Yu,Tawfique Hasan,Yang Xu,Weida Hu,Xiangfeng Duan

DOI: https://doi.org/10.1002/adma.201770155

IF: 29.4

2017-01-01

Advanced Materials

Abstract:Graphene can be used for wide-broadband photodetectors since its photoresponse spectrum covers from the UV to the terahertz frequencies. A graphene hyperspectral image of West-Lake in Hangzhou, China is shown, indicating the wealth of sufficient information held in the broad spectral domain. The work described in article number 1700463 by Yang Xu, Weida Hu, and co-workers shows potential application in, for example, global climate research, mapping of wetlands, mineral identification, crop analysis, and bathymetry.
Near Infrared Absorption Enhancement of Graphene for High-responsivity Photodetection

Xiyuan Cao,Yijin Zhang,Yi Jin,Aimin Wu

DOI: https://doi.org/10.1109/group4.2019.8925555

2019-01-01

Abstract:Near-infrared strong light harvesting of graphene is obtained based on multipole resonance interference of silicon nanodisks. The ultrathin design allows the active area with effective generation of photo carriers, paving a new way for small footprint high-speed and high-responsivity photon detection.
A high-response ultraviolet photodetector by integrating GaN nanoparticles with graphene

Yang Chen,You Wu,Jianwei Ben,Ke Jiang,Yuping Jia,Shanli Zhang,Hang Zang,Zhiming Shi,Bin Duan,Xiaojuan Sun,Dabing Li

DOI: https://doi.org/10.1016/j.jallcom.2021.159281

IF: 6.2

2021-07-01

Journal of Alloys and Compounds

Abstract:A new type of ultraviolet photodetector was fabricated by integrating GaN nanoparticles as the absorber and graphene as the carrier transport channel. The GaN nanoparticles prepared by metal-organic chemical vapor deposition exhibited the average diameter, height and density of 87.2 nm, 18.4 nm and 5 × 109/cm2, respectively. The chemical component and optical properties of the GaN nanoparticles were also confirmed and discussed. The monolayer graphene film was transferred onto GaN nanoparticles for the detector fabrication, which possessed the high crystalline quality and uniform coverage. Since the GaN nanoparticles providing trap states for the photo-generated hole, a longer carrier lifetime and higher gain would be obtained. In addition, based on the high carrier mobility of the graphene, the ultraviolet photodetector exhibited a persistent photoconduction effect and achieved a high responsivity of 200.69 A/W. The Kelvin probe force microscope measurements were carried out to reveal the device work mechanism and the carrier transport model has been established according to the decreased graphene surface potential of 0.2 eV before and after contacting with the GaN nanoparticles. Present work provides a method for obtaining new types of Ⅲ-nitrides-based ultraviolet photodetectors with high response.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
High performance self-powered photodetectors based on graphene nanoribbons/Al 2 O 3 /InGaZnO heterojunctions

Xiaoling Ye,Xiaoxiao Zheng,Lei Han,Yu Sun,Liang Wang,Ziheng Li,Wencheng Liu,Benqing Liu,Nan Han,Safia Khan,Syed Hassan Mujtaba Jafri,Mingyang Wang,Yafei Ning,Hu Li

DOI: https://doi.org/10.1109/jphot.2024.3381440

IF: 2.4

2024-01-01

IEEE Photonics Journal

Abstract:Self-powered photodetectors which operate without external power sources hold immense promise in future photodetection systems. To achieve high-performance selfpowered optoelectronic devices, efficient electron-hole pair separation is critical to generate high photocurrents. In this work, we successfully synthesized semiconducting graphene nanoribbons (GNRs) with a direct bandgap of 1.80 eV and employed them to construct a high-performance GNR/Al2O3/IGZO heterostructure photodetector. The built-in electric field in the heterojunctions enables this photodetector to exhibit remarkable performance, showing a responsivity of up to 68 mA/W, a detectivity of 8.34 ×1010 Jones, and rapid response times of 21/20 ms at zero bias. Furthermore, the photodetector features a wide spectral detection range of 405 to 1550 nm. These results highlight the promising potential of GNR/IGZO p-n heterojunction-based self-powered photodetectors in optoelectronic applications.

engineering, electrical & electronic,optics,physics, applied
SnS Nanoflakes/Graphene Hybrid: Towards Broadband Spectral Response and Fast Photoresponse

Xiangyang Li,Shuangchen Ruan,Haiou Zhu

DOI: https://doi.org/10.3390/nano12162777

IF: 5.3

2022-08-13

Nanomaterials

Abstract:High responsivity has been recently achieved in a graphene-based hybrid photogating mechanism photodetector using two-dimensional (2D) semiconductor nanosheets or quantum dots (QDs) sensitizers. However, there is a major challenge of obtaining photodetectors of fast photoresponse time and broad spectral photoresponse at room temperature due to the high trap density generated at the interface of nanostructure/graphene or the large band gap of QDs. The van der Waals interfacial coupling in small bandgap 2D/graphene heterostructures has enabled broadband photodetection. However, most of the photocarriers in the hybrid structure originate from the photoconductive effect, and it is still a challenge to achieve fast photodetection. Here, we directly grow SnS nanoflakes on graphene by the physical vapor deposition (PVD) method, which can avoid contamination between SnS absorbing layer and graphene and also ensures the high quality and low trap density of SnS. The results demonstrate the extended broad-spectrum photoresponse of the photodetector over a wide spectral range from 375 nm to 1550 nm. The broadband photodetecting mechanisms based on a photogating effect induced by the transferring of photo-induced carrier and photo-hot carrier are discussed in detail. More interestingly, the device also exhibits a large photoresponsivity of 41.3 AW−1 and a fast response time of around 19 ms at 1550 nm. This study reveals strategies for broadband response and sensitive photodetectors with SnS nanoflakes/graphene.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Interfacial Gated Graphene Photodetector with Broadband Response

Zhongzheng Huang,Junku Liu,Tianfu Zhang,Yuanhao Jin,Jiaping Wang,Shoushan Fan,Qunqing Li

DOI: https://doi.org/10.1021/acsami.1c02738

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:A much stronger interfacial gating effect was observed in the graphene/HfO2/Si photodetector when compared with that in the graphene/SiO2/Si photodetector. We found that this improvement was due to the higher interface state density at the HfO2/Si interface and the higher dielectric constant of the HfO2 layer. The photoresponsivity of the graphene/HfO2/Si photodetector is as high as 45.8 A W-1. Germanium and amorphous MoS2 (a-MoS2) were used to prepare graphene/HfO2/Ge and graphene/HfO2/a-MoS2 photodetectors, further demonstrating the high efficiency of the interfacial gating mechanism for photodetection. Because of the 0.196 eV bandgap of a-MoS2, which was verified in our previous report, the graphene/HfO2/a-MoS2 photodetector realized ultrabroadband photodetection over the range from 473 nm (visible) to 2712 nm (mid-infrared) at room temperature with photoresponsivity as high as 5.36 A W-1 and response time as fast as 68 μs, which represent significant improvements from the corresponding properties of the pure a-MoS2 photodetectors in our previous report and are comparable with those of state-of-the-art broadband photodetectors. By taking full advantage of the interfacial gating mechanism, a fast response, high photoresponsivity and ultrabroadband photodetection were achieved simultaneously. These interfacial gated graphene photodetectors also offer simple fabrication and full semiconductor process compatibility. The advantages described here indicate that the proposed photodetectors have significant potential for use in electronic and optoelectronic applications and offer a new path toward the development of ultrabroadband photodetectors.

Oxidized Eutectic Gallium–indium (egain) Nanoparticles for Broadband Light Response in a Graphene-Based Photodetector

Enhanced Performance of a Graphene/gaas Self-Driven Near-Infrared Photodetector with Upconversion Nanoparticles.

A synergetic enhancement of localized surface plasmon resonance and photo-induced effect for graphene/GaAs photodetector.

Facile Fabrication of Eutectic Gallium-Indium Alloy Nanostructure and Application in Photodetection.

High-responsivity Graphene/inas Nanowire Heterojunction Near-Infrared Photodetectors with Distinct Photocurrent On/off Ratios.

ZnO Quantum Dot-Doped Graphene/h-Bn/gan-heterostructure Ultraviolet Photodetector with Extremely High Responsivity.

High-performance broadband graphene/silicon/graphene photodetectors: From x-ray to near-infrared

Graphene photodetectors with ultra-broadband and high responsivity at room temperature

Photogating-controlled ZnO Photodetector Response for Visible to Near-Infrared Light.

Planar Carbon Nanotube-Graphene Hybrid Films For High-Performance Broadband Photodetectors

Superionic Modulation of Polymethylmethacrylate-Assisted Suspended Few-Layer Graphene Nanocomposites for High-Performance Photodetectors.

Graphene–PbS Quantum Dot Heterostructure for Broadband Photodetector with Enhanced Sensitivity

Broadband surface plasmon resonance enhanced self-powered graphene/GaAs photodetector with ultrahigh detectivity

Multicolor Broadband and Fast Photodetector Based on InGaAs–Insulator–Graphene Hybrid Heterostructure

Amorphous Gallium Oxide Nanosheets with Broad Absorption and Spin Polarization for Si‐Based UV‒Vis‒NIR Photodetectors

Photodetectors: A Broadband Fluorographene Photodetector (Adv. Mater. 22/2017)

Near Infrared Absorption Enhancement of Graphene for High-responsivity Photodetection

A high-response ultraviolet photodetector by integrating GaN nanoparticles with graphene

High performance self-powered photodetectors based on graphene nanoribbons/Al 2 O 3 /InGaZnO heterojunctions

SnS Nanoflakes/Graphene Hybrid: Towards Broadband Spectral Response and Fast Photoresponse

Interfacial Gated Graphene Photodetector with Broadband Response