Abstract:Twisted bilayer transition metal dichalcogenides are ideal platforms to study ﬂat-band phenomena. In this paper, we investigate ﬂat-band plasmons in the hole-doped twisted bilayer MoS 2 (tb-MoS 2 ) by employing a full tight-binding model and the random phase approximation. When considering lattice relaxations in tb-MoS 2 , the ﬂat band is not separated from remote valence bands, which makes the contribution of interband transitions in transforming the plasmon dispersion and energy signiﬁcantly diﬀerent. In particular, low-damped and quasi-ﬂat plasmons emerge if we only consider intraband transitions in the doped ﬂat band, whereas a √ q plasmon dispersion emerges if we also take into account interband transitions between the ﬂat band and remote bands. Fur-thermore, the plasmon energies are tunable with twist angles and doping levels. However, in a rigid sample that suﬀers no lattice relaxations, lower-energy quasi-ﬂat plasmons and higher-energy interband plasmons can coexist. For rigid tb-MoS 2 with a high doping level, strongly enhanced interband transitions quench the quasi-ﬂat plasmons. Based on the lattice relaxation and doping eﬀects, we conclude that two conditions, the isolated ﬂat band and a properly hole-doping level, are essential for observing the low-damped and quasi-ﬂat plasmon mode in twisted bilayer transition metal dichalcogenides. We hope that our study on ﬂat-band plasmons can be instructive for studying the possibility of plasmon-mediated superconductivity in twisted bilayer transition metal dichalcogenides in the future.

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