Abstract:Two-dimensional (2D) photodetectors based on semiconducting transitional metal chalcogenides (TMDs) have attracted much attention because of its unique mechanical and opto-electronic properties which can be integrated into nanoscale-sized opto-electronic devices and complex circuits. However, the photodetection range of 2D TMDs materials based detectors are generally limited within the visible range due to its intrinsic relatively large band-gap. In addition, 2D TMDs materials also suffers from weak light absorption inherited from their atomically thin layers, resulting in a photoresponsivity that can be further improved. Herein, by combining 2D MoS2 with zero-dimensional (0D) PbSe quantum dots (QDs) and Au nanocrystals (NCs), a novel 2D-0D photo detector (i.e., MoS2/PbSe@Au) is fabricated. Our MoS2/PbSe@Au photodetector exploits the 2D MoS2 as the conduction channels and PbSe@Au NCs as light sensitizer, which promote the absorption of the entire device and enable appreciable photodetection extending to the near-infrared (NIR). Prominently, the mixed-dimensional photodetector exhibits high responsivity of 1.22 A/W and detectivity of 1.56*10(9) Jones (cm.Hz(1/2).W-1) at NIR (e.g., 1064 nm) compared with the MoS2 photodetector with PbSe QDs only, which are ascribed to the more efficient two-step charge transfer process between PbSe and MoS2 with the presence of Au NCs. We further identify the new carrier multiplication mechanism when comparing the photoresponse of our photodetectors at 405 nm and 635 nm. We found the extremely high EQE of MoS2/PbSe@Au photodetector at the wavelength of 405 nm (268.1%) could be ascribed to the synergism of carrier multiplication (CM) in PbSe QDs and the photo gating effect induced by Au nanoparticles. Our study demonstrates that the novel mixed-dimensional photodetectors based on CVD-grown MoS2 may provide a new route for designing and realizing high-performance optoelectronic devices with harvesting merits of hybrid nanomaterials.

Light-triggered Interfacial Charge Transfer and Enhanced Photodetection in CdSe/ZnS Quantum Dots/mos2 Mixed-Dimensional Phototransistors

Ligand-Induced Charge Transport Modulation and Enhanced Photoresponse in Hybrid Mos2/Quantum Dot Phototransistors

Enhanced Visible to Near-Infrared Photodetectors Made from MoS2-based Mixed-Dimensional Structures

All-Inorganic Perovskite Quantum Dot-Monolayer MoS2 Mixed-Dimensional Van Der Waals Heterostructure for Ultrasensitive Photodetector.

A high-performance WS2/ZnO QD heterojunction photodetector with charge and energy transfer

Ligand Engineering for Improved All-Inorganic Perovskite Quantum Dot-MoS2 Monolayer Mixed Dimensional van der Waals Phototransistor

Photoluminescence Enhancement of MoS2/CdSe Quantum Rod Heterostructures Induced by Energy Transfer and Exciton-Exciton Annihilation Suppression.

Optical Interference Effect in the Hybrid Quantum Dots/two-Dimensional Materials: Photoluminescence Enhancement and Modulation.

Synergistic Effect of Hybrid PbS Quantum Dots/2D-WSe2 Toward High Performance and Broadband Phototransistors

Energy Transfer in Hybrid 0D-Cdse Quantum Dot/2d-Wse2 Near-Infrared Photodetectors

Interfacial Charge Behavior Modulation In Perovskite Quantum Dot-Monolayer Mos2 0d-2d Mixed-Dimensional Van Der Waals Heterostructures

Ultrasensitive Hybrid MoS2-ZnCdSe Quantum Dot Photodetectors with High Gain

Charge and Energy Transfer Dynamics in Single Colloidal Quantum Dots/monolayer MoS2 Heterostructures.

Growth of CdSe/MoS2 Vertical Heterostructures for Fast Visible-Wavelength Photodetectors

Interfacial Charge Behavior Modulation in Perovskite Quantum Dot-Monolayer MoS<sub>2</sub> 0D-2D Mixed-Dimensional van der Waals Heterostructures

Direct Observation of Perovskite Photodetector Performance Enhancement by Atomically Thin Interface Engineering.

Synergistic‐engineered Van Der Waals Photodiodes with High Efficiency

Vertical Heterostructures Based On Snse2/Mos2 For High Performance Photodetectors

High performance metal-semiconductor-metal ultraviolet photodetector based on mixed-dimensional TiO2/CsPbBr3 heterostructures

MoS2/WSe2 Vdw Heterostructures Decorated with PbS Quantum Dots for the Development of High-Performance Photovoltaic and Broadband Photodiodes.

Facile Fabrication of Quantum Junction Photodetectors Based on PbSe Quantum Dots